Browsing by author "Vanhellemont, Jan"
Now showing items 1-20 of 200
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A low-frequency noise study of state-of-the-art silicon n+p junction diodes
Simoen, Eddy; Vanhellemont, Jan; Claeys, Cor; Bosman, Gijs (1995) -
A simple technique for the separation of bulk and surface recombination parameters in silicon
Gaubas, Eugenijus; Vanhellemont, Jan (1996) -
A Study on the Microscopical and Macroscopical Effects of Hydrogenation on the Performance of Multicrystalline Solar Cells
Rosmeulen, Maarten; El Gamel, Hussam; Poortmans, Jef; Trauwaert, Marie-Astrid; Vanhellemont, Jan; Nijs, Johan (1994) -
Analysis of irradiation induced defects in silicon devices
Vegh, Gerzson; Simoen, Eddy; Vanhellemont, Jan; Claeys, C. (1995) -
Analytical Electron Microscopy of Si1-xGex/Si Heterostructures and Local Isolation Structures
Armigliato, A.; Balboni, R.; Corticelli, F.; Frabboni, S.; Malvezzi, F.; Vanhellemont, Jan (1994) -
Analytical electron microscopy of Si1-xGex/Si heterostructures and local isolation structures
Armigliato, A.; Balboni, R.; Corticelli, F.; Malvezzi, F.; Vanhellemont, Jan (1995) -
Assessment of quantitative characterization of localized strain using electron diffraction contrast imaging
Janssens, Koenraad; Van Der Biest, O.; Vanhellemont, Jan; Maes, Herman (1997) -
Brother silicon, sister germanium
Vanhellemont, Jan; Simoen, Eddy (2007) -
Bulk defect induced low-frequency noise in n+-p silicon diodes
Hou, F. C.; Bosman, Gijs; Simoen, Eddy; Vanhellemont, Jan; Claeys, C. (1998) -
Carrier lifetime spectrocopy for defect characterization in semiconductor materials and devices
Gaubas, Eugenijus; Simoen, Eddy; Vanhellemont, Jan (2016) -
Characterisation of high-energy proton irradiation induced recombination centers in silicon
Kaniava, Arvydas; Vanhellemont, Jan; Simoen, Eddy; Claeys, C.; Gaubas, Eugenijus (1996) -
Characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy
De Gryse, O.; Clauws, P.; Vanhellemont, Jan; Lebedev, O.I.; Van Landuyt, J.; Simoen, Eddy; Claeys, Cor (2004) -
Characterization of SIPOS films by spectroscopic ellipsometry and transmission electron microscopy
Kragler, G.; Bender, Hugo; Willeke, Gerhard; Bucher, E.; Vanhellemont, Jan (1994) -
Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation
Janssens, Koenraad; Van Der Biest, O.; Vanhellemont, Jan; Maes, Herman; Hull, R. (1995) -
Chemical and structural characterization of oxygen precipitates in silicon by infrared spectroscopy and TEM
De Gryse, O.; Clauws, P.; Lebedev, O.; Van Landuyt, J.; Vanhellemont, Jan; Claeys, C.; Simoen, Eddy (2001) -
Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics
Vanhellemont, Jan; Kissinger, G.; Kenis, Karine; Depas, Michel; Gräf, D.; Lambert, U.; Wagner, P. (1996) -
Creation and dissolution of oxygen related defects in czochralski grown silicon at high pressure - high temperatures
Misiuk, A.; Vanhellemont, Jan; Claeys, Cor; Hartwig, J.; Prieur, E.; Datsenko, L. Khrupa V.; Antonova, I. V.; Bak-Misuk, J. (1994) -
Creation and dissolution of oxygen related defects in czochralski grown silicon treated at high pressures - high temperatures
Misiuk, A.; Vanhellemont, Jan; Claeys, Cor; Hartwig, J.; Prieur, E.; Datsenko, L.; Khrupa, V.; Antonova, I. V.; Bak-Misiuk, J. (1995) -
Deep levels in heat-treated and 252Cf-irradiated P-type silicon substrates with different oxygen content
Kaniava, Arvydas; Vanhellemont, Jan; Simoen, Eddy; Claeys, Cor (1994) -
Deep-level transient spectroscopic study of quenched-in defects in germanium
Segers, Siegfried; Lauwaert, Johan; Clauws, Paul; Callens, Freddy; Vanhellemont, Jan; Simoen, Eddy; Vrielinck, Henk (2014)