Browsing by author "Augendre, Emmanuel"
Now showing items 1-20 of 52
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60 MeV proton irradiation effects on NO-annealed and standard-oxide deep submicron MOSFETs
Simoen, Eddy; Hermans, Jan; Vereecken, Wim; Vermoere, Carl; Claeys, C.; Augendre, Emmanuel; Badenes, Gonçal; Mohammadzadeh, A. (2001) -
A high performance 0.18µm elevated source/drain technology with improved manufacturability
Augendre, Emmanuel; Rooyackers, Rita; Vandamme, Ewout; Perello, Carles; Van Dievel, Marc; Pochet, Sandrine; Badenes, Gonçal (1999) -
A low-power multi-gate FET CMOS technology with 13.9ps inverter delay, large-scale integrated high performance digital circuits and SRAM
von Arnim, Klaus; Augendre, Emmanuel; Pacha, C.; Schulz, Thomas; San, Kemal Tamer; Bauer, F.; Nackaerts, Axel; Rooyackers, Rita; Vandeweyer, Tom; Degroote, Bart; Collaert, Nadine; Dixit, Abhisek; Singanamalla, Raghunath; Xiong, W.; Marshall, A.; Cleavelin, C.R.; Schrüfer, K.; Jurczak, Gosia (2007) -
A new dummy-free shallow trench isolation concept for mixed-signal applications
Badenes, Gonçal; Rooyackers, Rita; Augendre, Emmanuel; Vandamme, Ewout; Perello, Carles; Heylen, Nancy; Grillaert, Joost; Deferm, Ludo (1999) -
A new dummy-free shallow trench isolation concept for mixed-signal applications
Badenes, Gonçal; Rooyackers, Rita; Augendre, Emmanuel; Vandamme, Ewout; Perello, Carles; Heylen, Nancy; Grillaert, Joost; Deferm, Ludo (2000) -
A reliable metric for mobility extraction of short channel MOSFETs
Severi, Simone; Pantisano, Luigi; Augendre, Emmanuel; San Andres Serrano, Enrique; Eyben, Pierre; De Meyer, Kristin (2007) -
A simulation evaluation of 100 nm CMOS device performance
Jones, S. K.; Bazley, D. J.; Augendre, Emmanuel; Badenes, Gonçal; De Keersgieter, An; Skotnicki, T. (2001) -
Advanced CMOS device technologies for 45nm node and below
Veloso, Anabela; Hoffmann, Thomas; Lauwers, Anne; Yu, HongYu; Severi, Simone; Augendre, Emmanuel; Kubicek, Stefan; Verheyen, Peter; Collaert, Nadine; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2007) -
Analysis and optimisation of the 2D-dopant profile in a 90 nm CMOS technology using scanning spreading resistance microscopy
Eyben, Pierre; Alvarez, David; Jurczak, Gosia; Rooyackers, Rita; De Keersgieter, An; Augendre, Emmanuel; Vandervorst, Wilfried (2003) -
Analysis of the two-dimensional-dopant profile in a 90 nm complementary metal-oxide-semiconductor technology using scanning spreading resistance microscopy
Eyben, Pierre; Alvarez, David; Jurczak, Gosia; Rooyackers, Rita; De Keersgieter, An; Augendre, Emmanuel; Vandervorst, Wilfried (2004-01) -
Arsenic and phosphorus co-implantation for deep-submicron CMOS gate and source/drain engineering
Augendre, Emmanuel; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Van Laer, Joris; Badenes, Gonçal (2001) -
Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors
Severi, Simone; Pawlak, Bartek; Duffy, Ray; Augendre, Emmanuel; Henson, Kirklen; Lindsay, Richard; De Meyer, Kristin (2007) -
Challenges in scaling of CMOS devices towards 65nm node
Jurczak, Gosia; Veloso, Anabela; Rooyackers, Rita; Augendre, Emmanuel; Mertens, Sofie; Rothschild, Aude; Schaekers, Marc; Lindsay, Richard; Lauwers, Anne; Henson, Kirklen; Severi, Simone; Pollentier, Ivan; De Keersgieter, An (2003-06) -
CMOS device optimisation for mixed-signal technologies
Stolk, Peter; Tuinhout, Hans; Duffy, Ray; Augendre, Emmanuel; Bellefroid, L. P.; Bolt, M. J. B.; Croon, Jeroen; Dachs, Charles; Huisman, F. R. J.; Moonen, A. J.; Ponomarev, Youri; Roes, R. F. M.; Da Rold, Martina; Seevinck, E.; Sreerambhatla, K. N.; Surdeanu, Radu; Velghe, Rudolf; Vertregt, M.; Webster, M. N.; van Winkelhoff, N. K. J.; Zegers-Van Duijnhoven, A. T. A. (2001) -
CMOS integration results for the 90nm technology node
Jurczak, Gosia; Augendre, Emmanuel; Van Bavel, Mieke; Dachs, Charles (2003) -
Controlling STI-related parasitic conduction in 90nm CMOS and below
Augendre, Emmanuel; Rooyackers, Rita; Shamiryan, Denis; Ravit, Claire; Jurczak, Gosia; Badenes, Gonçal (2002) -
Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications
Kottantharayil, Anil; Veloso, Anabela; Kubicek, Stefan; Schram, Tom; Augendre, Emmanuel; de Marneffe, Jean-Francois; Devriendt, Katia; Lauwers, Anne; Brus, Stephan; Henson, Kirklen; Biesemans, Serge (2004-06) -
Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Yu, HongYu; Singanamalla, Raghunath; Opsomer, Karl; Augendre, Emmanuel; Simoen, Eddy; Kittl, Jorge; Kubicek, Stefan; Severi, Simone; Shi, Xiaoping; Brus, Stephan; Zhao, Chao; de Marneffe, Jean-Francois; Locorotondo, Sabrina; Shamiryan, Denis; Van Dal, Mark; Veloso, Anabela; Lauwers, Anne; Niwa, Masaaki; Maex, Karen; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Direct measurement of MOSFET channel strain by means of backside etching and Raman spectroscopy on long-channel devices
Agaiby, Rouzet M. B.; Olsen, Sarah; Eneman, Geert; Simoen, Eddy; Augendre, Emmanuel; O'Neill, Anthony G. (2010) -
Doubling or quadrupling MuGFET Fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency
Rooyackers, Rita; Augendre, Emmanuel; Degroote, Bart; Collaert, Nadine; Nackaerts, Axel; Dixit, Abhisek; Vandeweyer, Tom; Pawlak, Bartek; Ercken, Monique; Kunnen, Eddy; Dilliway, Gabriela; Leys, Frederik; Loo, Roger; Jurczak, Gosia; Biesemans, Serge (2007)