Browsing by author "Haukka, S."
Now showing items 1-15 of 15
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Alternative gate insulator materials for future generation MOSFETs
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Jos; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, R.; Wilhelm, Rudi; Young, Edward; Zhao, Chao (2001) -
Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Fedorenko, Yanina; Swerts, Johan; Maes, Jan; Tois, E.; Haukka, S.; Wang, C.G; Wilk, G.; Delabie, Annelies; Deweerd, Wim; De Gendt, Stefan (2007) -
Characterisation of AlCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Besling, Wim; Young, Edward; Conard, Thierry; Zhao, Chao; Carter, Richard; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Haukka, S. (2002) -
Characterization of ALCVD Al2O3-ZrO2 nanolaminates, link between electrical and structural properties
Besling, Wim; Young, Edward; Conard, Thierry; Zhao, Chao; Vandervorst, Wilfried; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Maes, Jos; Tuominen, Marko; Haukka, S. (2001) -
Crystallization behaviour of ZrO2/Al2O3-based high-k gate stacks
Zhao, Chao; Richard, Olivier; Bender, Hugo; Houssa, Michel; Carter, Richard; De Gendt, Stefan; Heyns, Marc; Young, Edward; Tsai, Wilman; Roebben, G.; Van der Biest, O.; Haukka, S. (2001) -
Enhancement of ALCVD(TM) TiN growth on Si-O-C and a-SiC:H films by O2-based plasma treatments
Satta, Alessandra; Baklanov, Mikhaïl; Richard, Olivier; Vantomme, Andre; Bender, Hugo; Conard, Thierry; Maex, Karen; Li, W.M.; Elers, K. E.; Haukka, S. (2002) -
High k dielectric materials prepared by atomic layer CVD
Heyns, Marc; Bender, Hugo; Carter, Richard; Caymax, Matty; Conard, Thierry; De Gendt, Stefan; Degraeve, Robin; De Witte, Hilde; Groeseneken, Guido; Haukka, S.; Henson, Kirklen; Houssa, Michel; Kubicek, Stefan; Maes, Guido; Naili, Mohamed; Nohira, Hiroshi; Tsai, Wilman; Tuominen, Marko; Vandervorst, Wilfried; Wilhelm, Rudi; Yang, E.; Zhao, Chao (2001) -
In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction
Zhao, Chao; Roebben, G.; Bender, Hugo; Young, Edward; Haukka, S.; Houssa, Michel; Naili, Mohamed; De Gendt, Stefan; Heyns, Marc; Van der Biest, O. (2001) -
Miscibility of amorphous ZrO2-Al2O3 binary alloy
Zhao, Chao; Richard, Olivier; Bender, Hugo; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Young, Edward; Roebben, G.; Van Der Biest, O.; Haukka, S. (2002) -
MONA - merging optics and nanotechnologies: the nanophotonics technology roadmap
Fulbert, L.; Baets, Roel; Scavennec, A.; Fotheringham, U.; Beccard, R.; Krastev, K.; Holtsmanspötter, D.; Mounier, E.; Noharet, B.; Pearsall, T.; Haukka, S. (2007-04) -
Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization
Satta, Alessandra; Beyer, Gerald; Maex, Karen; Elers, K.; Haukka, S.; Vantomme, Andre (2000) -
Properties of TiN thin films deposited by ALCVD as barriers for Cu metallization
Satta, Alessandra; Beyer, Gerald; Maex, Karen; Elers, K.; Haukka, S.; Vantomme, Andre (2001) -
Stabilization of amorphous structures in ALCVD high-k oxide layers
Zhao, Chao; Richard, Olivier; Bender, Hugo; Young, Edward; Carter, Richard; Tsai, Wilman; Caymax, Matty; De Gendt, Stefan; Heyns, Marc; Roebben, G.; Van der Biest, O.; Maes, Jos; Tuominen, Marko; Haukka, S. (2001) -
Thermostability of amorphous zirconium aluminate high-K layers
Zhao, Chao; Richard, Olivier; Young, Edward; Bender, Hugo; Roebben, G.; Haukka, S.; De Gendt, Stefan; Houssa, Michel; Carter, Richard; Tsai, Wilman; Van Ber Biest, O.; Heyns, Marc (2002) -
Trap-assisted tunneling in high permittivity gate dielectric stacks
Houssa, Michel; Tuominen, Marko; Naili, Mohamed; Afanas'ev, V.; Stesmans, Andre; Haukka, S.; Heyns, Marc (2000)