Browsing by author "Cho, Moon Ju"
Now showing items 21-40 of 110
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Degradation and breakdown of 0.9 nm EOT SiO2/ ALD HfO2/metal gate stacks under positive constant voltage stress
Degraeve, Robin; Kauerauf, Thomas; Cho, Moon Ju; Zahid, Mohammed; Ragnarsson, Lars-Ake; Brunco, David; Kaczer, Ben; Roussel, Philippe; De Gendt, Stefan; Groeseneken, Guido (2005-12) -
Degradation of time dependent variability due to interface state generation
Toledano Luque, Maria; Kaczer, Ben; Franco, Jacopo; Roussel, Philippe; Bina, Markus; Grasser, Tibor; Cho, Moon Ju; Weckx, Pieter; Groeseneken, Guido (2013) -
Detailed analysis of charge pumping and IdVg hysteresis for profiling traps in SiO2/HfSiO(N)
Sahhaf, Sahar; Degraeve, Robin; Cho, Moon Ju; De Brabanter, K.; Roussel, Philippe; Zahid, Mohammed; Groeseneken, Guido (2010-12) -
Device architectures and their integration challenges for 1x nm node: FinFETs and high mobility channel
Horiguchi, Naoto; Zschaetzsch, Gerd; Sasaki, Yuichiro; Kambham, Ajay Kumar; Togo, Mitsuhiro; Cho, Moon Ju; Ragnarsson, Lars-Ake; Hellings, Geert; Mitard, Jerome; Franco, Jacopo; Eneman, Geert; Witters, Liesbeth; Waldron, Niamh; Lin, Dennis; Pantisano, Luigi; Collaert, Nadine; Vandervorst, Wilfried; Thean, Aaron (2012-09) -
Diffusion and gate replacement: a new gate-first high-k/metal gate CMOS integration scheme suppressing gate height symmetry
Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; Caillat, Christian; Cho, Moon Ju; Simoen, Eddy; Aoulaiche, Marc; Albert, Johan; Chew, Soon Aik; Noh, Kyung Bong; Son, Yunik; Mitard, Jerome; Mocuta, Anda; Horiguchi, Naoto; Fazan, Pierre; Thean, Aaron (2016) -
Dual-channel technology with Cap-free single metal gate for high performance CMOS in gate-first and gate-last integration
Witters, Liesbeth; Mitard, Jerome; Veloso, Anabela; Hikavyy, Andriy; Franco, Jacopo; Kauerauf, Thomas; Cho, Moon Ju; Schram, Tom; Sebaai, Farid; Yamaguchi, Shinpei; Takeoka, S.; Fukuda, Masahiro; Wang, Wei-E; Duriez, Blandine; Eneman, Geert; Loo, Roger; Kellens, Kristof; Tielens, Hilde; Favia, Paola; Rohr, Erika; Hellings, Geert; Bender, Hugo; Roussel, Philippe; Crabbe, Yvo; Brus, Stephan; Mannaert, Geert; Kubicek, Stefan; Devriendt, Katia; De Meyer, Kristin; Ragnarsson, Lars-Ake; Steegen, An; Horiguchi, Naoto (2011) -
Electrical defects in dielectrics for flash memories studied by Trap Spectroscopy by Charge Injection and Sensing (TSCIC)
Degraeve, Robin; Cho, Moon Ju; Govoreanu, Bogdan; Kaczer, Ben; Zahid, Mohammed; Van den Bosch, Geert; Van Houdt, Jan; Jurczak, Gosia; Groeseneken, Guido (2009) -
Electrode process dependent NBTI chracteristics of TiN gate FinFETs
Kim, Jinju; Cho, Moon Ju; Pantisano, Luigi; Chiarella, Thomas; Togo, Mitsuhiro; Horiguchi, Naoto; Groeseneken, Guido; Lee, ByoungHun (2012-04) -
Endurance of one transistor floating body RAM on UTBOX SOI
Aoulaiche, Marc; Bravaix, Alain; Simoen, Eddy; Caillat, Christian; Cho, Moon Ju; Witters, Liesbeth; Blomme, Pieter; Fazan, Pierre; Groeseneken, Guido; Jurczak, Gosia (2014) -
Experimental identification of unique oxide defect regions by characteristic response of charge pumping
Masuduzzaman, M.; Islam, Ahmad; Degraeve, Robin; Cho, Moon Ju; Zahid, Mohammed; Alam, M.A. (2011-04) -
Front end of the line process
Han, Jeong Hwan; Cho, Moon Ju; Delabie, Annelies; Park, Tae Joo; Hwang, cheol seong (2014) -
Gate-all-around nanowire FETs vs. triple-gate FinFETs: on gate integrity and device characteristics
Veloso, Anabela; Cho, Moon Ju; Simoen, Eddy; Hellings, Geert; Matagne, Philippe; Collaert, Nadine; Thean, Aaron (2016) -
Gate-all-around nanowire FETs vs. triple-gate FinFETs: on gate integrity and device characteristics
Veloso, Anabela; Cho, Moon Ju; Simoen, Eddy; Hellings, Geert; Matagne, Philippe; Collaert, Nadine; Thean, Aaron (2016) -
Gate-all-around NWFETs vs. triple-gate FinFETs: junctionless vs. extensionless and conventional junction devices with controlled EWF modulation for multi-VT CMOS
Veloso, Anabela; Hellings, Geert; Cho, Moon Ju; Simoen, Eddy; Devriendt, Katia; Paraschiv, Vasile; Vecchio, Emma; Tao, Zheng; Versluijs, Janko; Souriau, Laurent; Dekkers, Harold; Brus, Stephan; Geypen, Jef; Lagrain, Pieter; Bender, Hugo; Eneman, Geert; Matagne, Philippe; De Keersgieter, An; Fang, W.; Collaert, Nadine; Thean, Aaron (2015) -
Gate-last vs. gate-first technology for aggressively scaled EOT Logic/RF CMOS
Veloso, Anabela; Ragnarsson, Lars-Ake; Cho, Moon Ju; Devriendt, Katia; Kellens, Kristof; Sebaai, Farid; Suhard, Samuel; Brus, Stephan; Crabbe, Yvo; Schram, Tom; Rohr, Erika; Paraschiv, Vasile; Eneman, Geert; Kauerauf, Thomas; Dehan, Morin; Hong, Sug-Hun; Yamaguchi, Shinpei; Takeoka, Shinji; Higuchi, Yuichi; Tielens, Hilde; Van Ammel, Annemie; Favia, Paola; Bender, Hugo; Franquet, Alexis; Conard, Thierry; Li, X.; Pey, K.-L.; Struyf, Herbert; Mertens, Paul; Absil, Philippe; Horiguchi, Naoto; Hoffmann, Thomas Y. (2011) -
Highly scalable effective work function engineering approach for multi-VT modulation of planar and FinFET-based RMG high-k last devies for (sub-)22nm nodes
Veloso, Anabela; Boccardi, Guillaume; Ragnarsson, Lars-Ake; Higuchi, Yuichi; Lee, Jae Won; Simoen, Eddy; Roussel, Philippe; Cho, Moon Ju; Chew, Soon Aik; Schram, Tom; Dekkers, Harold; Van Ammel, Annemie; Witters, Thomas; Brus, Stephan; Dangol, Anish; Paraschiv, Vasile; Vecchio, Emma; Shi, Xiaoping; Sebaai, Farid; Kellens, Kristof; Heylen, Nancy; Devriendt, Katia; Richard, Olivier; Bender, Hugo; Chiarella, Thomas; Arimura, Hiroaki; Thean, Aaron; Horiguchi, Naoto (2013) -
Hot-carrier analysis on nMOS Si finFETs with solid source doped junctions
Vaisman Chasin, Adrian; Franco, Jacopo; Ritzenthaler, Romain; Hellings, Geert; Cho, Moon Ju; Sasaki, Yuichiro; Subirats, Alexandre; Roussel, Philippe; Kaczer, Ben; Linten, Dimitri; Horiguchi, Naoto; Groeseneken, Guido; Thean, Aaron (2016) -
How far can we analyze oxide traps spatially with charge injection techniques?
Cho, Moon Ju; Degraeve, Robin; Roussel, Philippe; Zahid, Mohammed; Govoreanu, Bogdan; Kaczer, Ben; Van Houdt, Jan; Groeseneken, Guido (2008-12) -
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration
Ritzenthaler, Romain; Schram, Tom; Cho, Moon Ju; Mocuta, Anda; Horiguchi, Naoto; Thean, Aaron; Spessot, Alessio; Caillat, Christian; Aoulaiche, Marc; Fazan, Pierre; Noh, Kyung Bong; Son, Yunik (2015) -
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors
Aoulaiche, Marc; Federico, Antonio; Simoen, Eddy; Ritzenthaler, Romain; Schram, Tom; Arimura, Hiroaki; Cho, Moon Ju; Kauerauf, Thomas; Crupi, Felice; Spessot, Alessio; Caillat, Christian; Fazan, Pierre; Na, Hoon Joo; Son, Yunik; Noh, Kyung Bong; Groeseneken, Guido; Horiguchi, Naoto; Thean, Aaron (2013)