Browsing by author "Arreghini, Antonio"
Now showing items 21-40 of 87
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Effect of high temperature annealing on tunnel oxide properties in TANOS devices
Arreghini, Antonio; Zahid, Mohammed; Van den Bosch, Geert; Suhane, Amit; Breuil, Laurent; Cacciato, Antonio; Van Houdt, Jan (2011) -
Effects of Geometry and Cycling on the Radiation Response of Charge-Trapping NAND Memory Devices With SiON Tunneling Oxide
Cao, Jingchen; Wynocker, Isabella; Zhang, En Xia; Reed, Robert A.; Alles, Michael L.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Arreghini, Antonio; Rosmeulen, Maarten; Bastos, Joao; Van den Bosch, Geert; Linten, Dimitri (2023-04-18) -
Electrical and physical characterization of Polycrystalline III-V compounds
Capogreco, Elena; Lisoni, Judit; Merckling, Clement; Numata, Toshinori; Arreghini, Antonio; De Meyer, Kristin; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Electrolithic Memory: A New Device for Ultrahigh-Density Data Storage
Fransen, Senne; Willems, Kherim; Philipsen, Harold; Verreck, Devin; Van Roy, Wim; Henry, Olivier; Arreghini, Antonio; Van den Bosch, Geert; Furnemont, Arnaud; Rosmeulen, Maarten (2022) -
Electron trap profiling near Al2O3/ gate interface in TANOS stack using gate-side-trap spectroscopy by charge injection and sensing
Zahid, Mohammed; Arreghini, Antonio; Degraeve, Robin; Govoreanu, Bogdan; Suhane, Amit; Van Houdt, Jan (2010) -
Enabling 3D NAND Trench Cells for Scaled Flash Memories
Rachidi, Sana; Ramesh, Siva; Breuil, Laurent; Tao, Zheng; Verreck, Devin; Donadio, Gabriele Luca; Arreghini, Antonio; Van den Bosch, Geert; Rosmeulen, Maarten (2023) -
Erase behavior of charge trap flash memory devices using high-k dielectric as blocking oxide liner
Ramesh, Siva; Ajaykumar, Arjun; Bastos, Joao; Breuil, Laurent; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Ragnarsson, Lars-Ake; Schleicher, Filip; Jossart, Nico; Stiers, Jimmy; Van den Bosch, Geert; Rosmeulen, Maarten (2020) -
Evidences for vertical charge dipole formation in charge-trapping memories and its impact on reliability
Padovani, Andrea; Arreghini, Antonio; Vandelli, Luca; Larcher, Luca; Van den Bosch, Geert; Van Houdt, Jan (2012) -
Experimental and theoretical verification of channel conductivity degradation due to grain boundaries and defects in 3D NAND
Subirats, Alexandre; Arreghini, Antonio; Capogreco, Elena; Delhougne, Romain; Tan, Chi Lim; Hikavyy, Andriy; Breuil, Laurent; Degraeve, Robin; Putcha, Vamsi; Van den Bosch, Geert; Linten, Dimitri; Furnemont, Arnaud (2017) -
Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Vandelli, Luca; Padovani, Andrea; Breuil, Laurent; Larcher, Luca; De Meyer, Kristin; Van Houdt, Jan (2010) -
Experimental evaluation of trapping efficiency in silicon nitride based charge trapping memories
Suhane, Amit; Arreghini, Antonio; Van den Bosch, Geert; Breuil, Laurent; Cacciato, Antonio; Rothschild, Aude; Jurczak, Gosia; Van Houdt, Jan; De Meyer, Kristin (2009) -
Experimental evidence toward understanding charge pumping signals in 3-D devices with Poly-Si channel
Tang, Baojun; Zhang, Weidong; Toledano Luque, Maria; Zhang, Jianfu; Degraeve, Robin; Ji, Zhigang; Arreghini, Antonio; Van den Bosch, Geert; Van Houdt, Jan (2014) -
Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Subirats, Alexandre; Lisoni, Judit Gloria; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Tan, Chi Lim; Delhougne, Romain; Van den Bosch, Geert; De Meyer, Kristin; Furnemont, Arnaud; Van Houdt, Jan (2017) -
First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices
Delhougne, Romain; Arreghini, Antonio; Rosseel, Erik; Hikavyy, Andriy; Vecchio, Emma; Zhang, Liping; Pak, Murat; Nyns, Laura; Raymaekers, Tom; Jossart, Nico; Breuil, Laurent; Vadakupudhu Palayam, Senthil; Tan, ChiLim; Van den Bosch, Geert; Furnemont, Arnaud (2018) -
First demonstration of MOVPE In1-xGaxAs macaroni channel for 3-D NAND memory devices
Ramesh, Siva; Vadakupudhu Palayam, Senthil; Rosseel, Erik; Arreghini, Antonio; Kunert, Bernardette; Baryshnikova, Marina; Zhang, Liping; Ong, Patrick; Teugels, Lieve; Pak, Murat; Jossart, Nico; Raymaekers, Tom; Stiers, Jimmy; Van den Bosch, Geert; Furnemont, Arnaud (2019) -
First demonstration of ruthenium and molybdenum word lines integrated into 40nm ptch 3D NAND memory devices
Ajaykumar, Arjun; Breuil, Laurent; Katcko, Kostantine; Schleicher, Filip; Sebaai, Farid; Oniki, Yusuke; Ramesh, Siva; Arreghini, Antonio; Nyns, Laura; Soulie, Jean-Philippe; Stiers, Jimmy; Rosmeulen, Maarten; Van den Bosch, Geert (2021) -
First demonstration of SiGe channel in Macaroni geometry for future 3D NAND devices
Arreghini, Antonio; Delhougne, Romain; Subirats, Alexandre; Hikavyy, Andriy; Van den Bosch, Geert; Furnemont, Arnaud (2017) -
First-principles study of oxygen and aluminum defects in $b-Si3N4: Compensation and charge trapping
Grillo, Maria Elena; Elliott, Simon D.; Rodriguez, Jesus; Anez, Rafael; Coll, David Santiago; Suhane, Amit; Breuil, Laurent; Arreghini, Antonio; Degraeve, Robin; Shariq, Ahmed; Beyer, Volkhard; Czernohorsky, Malte (2014) -
High performance THANVaS memories for MLC charge trap NAND flash
Suhane, Amit; Van den Bosch, Geert; Arreghini, Antonio; Breuil, Laurent; Cacciato, Antonio; Zahid, Mohammed; Debusschere, Ingrid; De Meyer, Kristin; Van Houdt, Jan (2011) -
High-K incorporated in a SiON tunnel layer for 3D NAND programming voltage reduction
Breuil, Laurent; Nyns, Laura; Rachidi, Sana; Banerjee, Kaustuv; Arreghini, Antonio; Bastos, Joao; Ramesh, Siva; Van den Bosch, Geert; Rosmeulen, Maarten (2022)