Browsing by author "Witters, Liesbeth"
Now showing items 21-40 of 268
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An investigation of growth and properties of Si capping layers used in advanced SiGe/Ge based pMOS transistors
Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vanherle, Wendy; Vandervorst, Wilfried; Dekoster, Johan; Loo, Roger; Caymax, Matty (2012) -
Analysis of dopant diffusion and defects in SiGe channel quantum well for laser annealed device using an atomistic kinetic Monte Carlo approach
Noda, Taji; Witters, Liesbeth; Mitard, Jerome; Rosseel, Erik; Hellings, Geert; Vrancken, Christa; Bender, Hugo; Hoffmann, T.Y.; Horiguchi, Naoto; Vandervorst, Wilfried (2011) -
Analysis of dopant diffusion and defects in SiGe-channel implant free quantum well (IFQW) devices using an atomistic kinetic Monte Carlo approach
Noda, Taiji; Mitard, Jerome; Witters, Liesbeth; Hellings, Geert; Vrancken, Christa; Eyben, Pierre; Thean, Aaron; Horiguchi, Naoto; Vandervorst, Wilfried (2012) -
Anisotropic stress in narrow sGe fin field-effect transistor channels measured using nano-focused Raman spectroscopy
Nuytten, Thomas; Bogdanowicz, Janusz; Witters, Liesbeth; Eneman, Geert; Hantschel, Thomas; Schulze, Andreas; Favia, Paola; Bender, Hugo; De Wolf, Ingrid; Vandervorst, Wilfried (2018) -
Application of group IV epitaxy for production of gate all around transistors
Hikavyy, Andriy; Mertens, Hans; Witters, Liesbeth; Loo, Roger; Horiguchi, Naoto (2017) -
Applications of dynamic surface annealing for high-performance Si and Ge based MOS devices
Rosseel, Erik; Everaert, Jean-Luc; Hikavyy, Andriy; Witters, Liesbeth; Mitard, Jerome; Vandervorst, Wilfried (2011) -
Atomistic modeling of impurity ion implantation in ultra-thin-body Si devices
Pelaz, L.; Duffy, Ray; Aboy, M.; Marques, L.; Lopez, P.; Santos, I.; Pawlak, Bartek; Van Dal, Mark; Duriez, Blandine; Merelle, Thomas; Doornbos, Gerben; Collaert, Nadine; Witters, Liesbeth; Rooyackers, Rita; Vandervorst, Wilfried; Jurczak, Gosia; Kaiser, M.; Weemaes, R.; Van Berkum, J.; Breimer, P.; Lander, Rob (2008) -
Benchmarking SOI and bulk FinFET alternatives for PLANAR CMOS scaling succession
Chiarella, Thomas; Witters, Liesbeth; Mercha, Abdelkarim; Kerner, Christoph; Rakowski, Michal; Ortolland, Claude; Ragnarsson, Lars-Ake; Parvais, Bertrand; De Keersgieter, An; Kubicek, Stefan; Redolfi, Augusto; Vrancken, Christa; Brus, Stephan; Lauwers, Anne; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2010) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Merckling, Clement; Witters, Liesbeth; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Biaxial and uniaxial compressive stress implemanted in Ge(Sn) pMOSFET channels by advanced reduced pressure chemical vapor deposition developments
Vincent, Benjamin; Gencarelli, Federica; Lin, Dennis; Nyns, Laura; Richard, Olivier; Bender, Hugo; Douhard, Bastien; Moussa, Alain; Merckling, Clement; Witters, Liesbeth; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities
Groeseneken, Guido; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Kauerauf, Thomas; Alian, AliReza; Mitard, Jerome; Arimura, Hiroaki; Lin, Dennis; Waldron, Niamh; Sioncke, Sonja; Witters, Liesbeth; Mertens, Hans; Ragnarsson, Lars-Ake; Heyns, Marc; Collaert, Nadine; Thean, Aaron; Steegen, An (2014-12) -
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Mitard, Jerome; Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Waldron, Niamh; Zhou, Daisy; Vais, Abhitosh; Lin, Dennis; Alian, AliReza; Pourghaderi, Mohammad Ali; Martens, Koen; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014) -
Buried metal line compatible with 3D sequential integration for top tier planar devices dynamic Vth tuning and RF shielding applications
Vandooren, Anne; Wu, Zhicheng; Khaled, Ahmad; Franco, Jacopo; Parvais, Bertrand; Li, W.; Witters, Liesbeth; Walke, Amey; Peng, Lan; Rassoul, Nouredine; Matagne, Philippe; Jamieson, Geraldine; Inoue, Fumihiro; Nguyen, B.Y.; Debruyn, Haroen; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Vecchio, Emma; Zheng, T.; Radisic, Dunja; Rosseel, Erik; Vanherle, Wendy; Hikavyy, Andriy; Chan, BT; Besnard, G.; Schwarzenbach, W.; Gaudin, G.; Radu, Iuliana; Waldron, Niamh; De Heyn, Vincent; Demuynck, Steven; Boemmels, Juergen; Ryckaert, Julien; Collaert, Nadine; Mocuta, Dan (2019) -
Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Kaczer, Ben; Groeseneken, Guido; Mitard, Jerome; Witters, Liesbeth; Hoffmann, Thomas Y. (2012) -
Capping-metal gate integration technology for multiple-VT CMOS in MuGFETs
Veloso, Anabela; Witters, Liesbeth; Demand, Marc; Ferain, Isabelle; Son, Nak Jin; Kaczer, Ben; Roussel, Philippe; Adelmann, Christoph; Brus, Stephan; Richard, Olivier; Bender, Hugo; Conard, Thierry; Vos, Rita; Rooyackers, Rita; Van Elshocht, Sven; Collaert, Nadine; De Meyer, Kristin; Biesemans, Serge; Jurczak, Malgorzata (2008) -
Challenges and opportunities in advanced Ge pMOSFETs
Simoen, Eddy; Mitard, Jerome; Hellings, Geert; Eneman, Geert; De Jaeger, Brice; Witters, Liesbeth; Vincent, Benjamin; Loo, Roger; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Claeys, Cor (2012) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Characteristics and integration challenges of FinFET-based devices for (Sub-)22nm technology nodes circuit applications
Veloso, Anabela; Van Dal, Mark; Collaert, Nadine; De Keersgieter, An; Witters, Liesbeth; Rooyackers, Rita; Redolfi, Augusto; Brus, Stephan; Duffy, Ray; Pawlak, Bartek; Vellianitis, Georgios; Duriez, Blandine; Merelle, Thomas; Absil, Philippe; Biesemans, Serge; Jurczak, Gosia; Hoffmann, Thomas Y.; Lander, Rob (2009-10)