Browsing by author "Lauwers, Anne"
Now showing items 21-40 of 136
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Characterisation and Applications of Epitaxial CoSi2
Lauwers, Anne (1995-08) -
CMOS integration of dual work function phase controlled Ni FUSI with simultaneous integration of nMOS (NiSi) and pMOS (Ni-rich silicide) gates on HfSiON
Lauwers, Anne; Veloso, Anabela; Hoffmann, Thomas Y.; Van Dal, Mark; Vrancken, Christa; Brus, Stephan; Locorotondo, Sabrina; de Marneffe, Jean-Francois; Sijmus, Bram; Kubicek, Stefan; Chiarella, Thomas; Kmieciak, Malgorzata; Opsomer, Karl; Niwa, Masaaki; Mitsuhashi, Riichirou; Kottantharayil, Anil; Yu, HongYu; Demeurisse, Caroline; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Absil, Philippe; Maex, Karen; Jurczak, Gosia; Biesemans, Serge; Kittl, Jorge (2005-12) -
CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach
Kottantharayil, Anil; Verheyen, Peter; Collaert, Nadine; Dixit, Abhisek; Kaczer, Ben; Snow, Jim; Vos, Rita; Locorotondo, Sabrina; Degroote, Bart; Shi, Xiaoping; Rooyackers, Rita; Mannaert, Geert; Brus, Stephan; Yim, Yong Sik; Lauwers, Anne; Goodwin, Michael; Kittl, Jorge; Van Dal, Mark; Richard, Olivier; Veloso, Anabela; Kubicek, Stefan; Beckx, Stephan; Boullart, Werner; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Akheyar, Amal; Lauwers, Anne; Kittl, Jorge; de Potter de ten Broeck, Muriel; Chamirian, Oxana; Jonckheere, Rik; Leunissen, Peter; Van Dal, Mark; Lindsay, Richard; Tempel, Georg; Maex, Karen (2003) -
Control and impact of processing ambient during rapid thermal silicidation
Maex, Karen; Kondoh, Eiichi; Lauwers, Anne; Steegen, An; de Potter de ten Broeck, Muriel; Besser, Paul; Proost, Joris (1998) -
CoSi2 formation from CoxNi1-x/Ti system
Chamirian, Oxana; Lauwers, Anne; Demeurisse, Caroline; Guérault, H.; Vantomme, Andre; Maex, Karen (2002) -
Cost effective low Vt Ni-FUSI CMOS on SiON by means of Al implant (pMOS) and Yb+P implant (nMOS)
Lauwers, Anne; Veloso, Anabela; Chang, Shou-Zen; Yu, HongYu; Hoffmann, Thomas Y.; Kerner, Christoph; Demand, Marc; Rothschild, Aude; Niwa, Masaaki; Satoru, Ito; Mitshashi, Riichirou; Ameen, Mike; Whittemore, Graham; Pawlak, Malgorzata; Vrancken, Christa; Demeurisse, Caroline; Mertens, Sofie; Vandervorst, Wilfried; Absil, Philippe; Biesemans, Serge; Kittl, Jorge (2008) -
Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility Transistors
Eneman, Geert; Simoen, Eddy; Delhougne, Romain; Gaubas, Eugenijus; Simons, Veerle; Roussel, Philippe; Verheyen, Peter; Lauwers, Anne; Loo, Roger; Vandervorst, Wilfried; De Meyer, Kristin; Claeys, Cor (2004) -
Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors
Eneman, Geert; Simoen, Eddy; Delhougne, Romain; Gaubas, Eugenijus; Simons, Veerle; Roussel, Philippe; Verheyen, Peter; Lauwers, Anne; Loo, Roger; Vandervorst, Wilfried; De Meyer, Kristin; Claeys, Cor (2005) -
Demonstration of fully Ni-silicided metal gates on HfO2 based high-k gate dielectrics as a candidate for low power applications
Kottantharayil, Anil; Veloso, Anabela; Kubicek, Stefan; Schram, Tom; Augendre, Emmanuel; de Marneffe, Jean-Francois; Devriendt, Katia; Lauwers, Anne; Brus, Stephan; Henson, Kirklen; Biesemans, Serge (2004-06) -
Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Adelmann, Christoph; Onsia, Bart; Lehnen, Peer; Kauerauf, Thomas; Brus, Stephan; Absil, Philippe; Biesemans, Serge (2007-11) -
Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON
Yu, HongYu; Singanamalla, Raghunath; Opsomer, Karl; Augendre, Emmanuel; Simoen, Eddy; Kittl, Jorge; Kubicek, Stefan; Severi, Simone; Shi, Xiaoping; Brus, Stephan; Zhao, Chao; de Marneffe, Jean-Francois; Locorotondo, Sabrina; Shamiryan, Denis; Van Dal, Mark; Veloso, Anabela; Lauwers, Anne; Niwa, Masaaki; Maex, Karen; De Meyer, Kristin; Absil, Philippe; Jurczak, Gosia; Biesemans, Serge (2005) -
Demonstration of phase-controlled Ni-FUSI CMOSFETs employing SiON dielectrics capped with sub-monolayer ALD HfSiON for low power applications
Yu, HongYu; Chang, Shou-Zen; Veloso, Anabela; Lauwers, Anne; Delabie, Annelies; Everaert, Jean-Luc; Singanamalla, Raghunath; Kerner, Christoph; Vrancken, Christa; Brus, Stephan; Absil, Philippe; Hoffmann, Thomas; Biesemans, Serge (2007-09) -
Diffusion-less junctions and super halo profiles for PMOS transistors formed by SPER and FUSI gate in 45 nm physical gate length devices
Severi, Simone; Kottantharayil, Anil; Pawlak, Bartek; Duffy, Ray; Henson, K.; Lindsay, R.; Lauwers, Anne; Veloso, Anabela; de Marneffe, Jean-Francois; Ramos, Javier; Sijmus, Bram; Devriendt, Katia; Camillo-Castillo, A.; Eyben, Pierre; Vandervorst, Wilfried; Jurczak, Gosia; Biesemans, Serge; De Meyer, Kristin (2004) -
Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates
Kittl, Jorge; Lauwers, Anne; Demeurisse, Caroline; Vrancken, Christa; Kubicek, Stefan; Absil, Philippe; Biesemans, Serge (2007) -
Dopant profiling in NixSi1-x gates with SIMS
Janssens, Tom; Kmieciak, Malgorzata; Kittl, Jorge; Fouchier, Marc; Lauwers, Anne; Kottantharayil, Anil; Vandervorst, Wilfried (2005) -
Dual work function metal gate CMOS by means of full silicidation (FUSI)
Absil, Philippe; Biesemans, Serge; Kittl, Jorge; Lauwers, Anne (2005-12) -
Effect of implant oxide on ultra-shallow junction formation
Lindsay, Richard; Lauwers, Anne; Fruehauf, Jens; de Potter de ten Broeck, Muriel; Maex, Karen (2001) -
Effect of implant oxide on ultra-shallow junction formation
Lindsay, Richard; Lauwers, Anne; Fruehauf, Jens; de Potter de ten Broeck, Muriel; Maex, Karen (2002) -
Effect of implantation oxide on the Ti- and Co-silicidation of narrow diffusion and poly-lines
Lauwers, Anne; Naem, Abdalla; de Potter de ten Broeck, Muriel; Maex, Karen (1998)