Browsing by author "Lauwers, Anne"
Now showing items 41-60 of 136
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Effect of silicidation schemes on interface contact resistance
Wang, Qingfeng; Lauwers, Anne; Deweerdt, Bruno; Maex, Karen (1994) -
Effects of alloying on properties of NiSi for CMOS applications
Van Dal, Mark; Akheyar, Amal; Kittl, Jorge; Chamirian, Oxana; de Potter de ten Broeck, Muriel; Demeurisse, Caroline; Lauwers, Anne; Maex, Karen (2004) -
Electrical demonstration of thermally stable Ni silicides on Si1-xCx epitaxial layers
Machkaoutsan, Vladimir; Verheyen, Peter; Bauer, M.; Zhang, Y.; Koelling, Sebastian; Franquet, Alexis; Vanormelingen, Koen; Loo, Roger; Kim, C.S.; Lauwers, Anne; Horiguchi, Naoto; Kerner, Christoph; Hoffmann, Thomas; Granneman, E.; Vandervorst, Wilfried; Absil, Philippe; Thomas, S.G. (2010) -
Electrical properties of n-MOSFETs using the NiSi:Yb FUSI electrode
Yu, HongYu; Lauwers, Anne; Demeurisse, Caroline; Richard, Olivier; Mertens, Sofie; Opsomer, Karl; Singanamalla, Raghunath; Rosseel, Erik; Absil, Philippe; Biesemans, Serge (2007-02) -
Elevated co-silicide for sub-100nm high performance and RF CMOS
Jurczak, Gosia; de Potter de ten Broeck, Muriel; Rooyackers, Rita; Jeamsaksiri, Wutthinan; Redolfi, Augusto; Grau, Lluis; Lauwers, Anne; Lindsay, Richard; Peytier, Ivan; Augendre, Emmanuel; Badenes, Gonçal (2002) -
Enhanced time delay integration imaging using embedded CCD in CMOS technology
De Moor, Piet; Robbelein, Jo; Haspeslagh, Luc; Boulenc, Pierre; Ercan, Alper; Minoglou, Kiki; Lauwers, Anne; De Munck, Koen; Rosmeulen, Maarten (2014) -
Evaluation of transmission line model structures for silicide-to-silicon specific contact resistance extraction
Stavitski, Natalie; Van Dal, Mark J.H.; Lauwers, Anne; Vrancken, Christa; Kovalgin, Alexey Y.; Wolters, Rob A.M. (2008) -
First electrical demonstration of DRAM compatible Ni silicides
Machkaoutsan, Vladimir; Bauer, Matthias; Zhang, Y.; Koelling, Sebastian; Franquet, Alexis; Vanormelingen, Koen; Verheyen, Peter; Loo, Roger; Kim, Chul Sung; Lauwers, Anne; Hoffmann, Thomas Y.; Absil, Philippe; Granneman, Ernst; Vandervorst, Wilfried; Thomas, Shawn. G (2009) -
First-principle calculations on gate/dielectric interfaces: on the origin of the work function shifts
Pourtois, Geoffrey; Lauwers, Anne; Kittl, Jorge; Pantisano, Luigi; Soree, Bart; De Gendt, Stefan; Magnus, Wim; Heyns, Marc; Maex, Karen (2005-06) -
Formation of deep submicrometer cobalt silicated poly gate using bilayer processes
Wang, Qingfeng; Lauwers, Anne; Deweerdt, Bruno; Verbeeck, Rita; Maex, Karen (1995) -
Full-field EUV and immersion lithography integration in 0.186μm² FinFET 6T-SRAM cell
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Demand, Marc; de Marneffe, Jean-Francois; Altamirano Sanchez, Efrain; De Keersgieter, An; Delvaux, Christie; De Backer, Johan; Brus, Stephan; Hermans, Jan; Baudemprez, Bart; Van Roey, Frieda; Lorusso, Gian; Baerts, Christina; Goossens, Danny; Vrancken, Christa; Mertens, Sofie; Versluijs, Janko; Truffert, Vincent; Huffman, Craig; Laidler, David; Heylen, Nancy; Ong, Patrick; Parvais, Bertrand; Rakowski, Michal; Verhaegen, Staf; Hikavyy, Andriy; Meiling, H.; Hultermans, B.; Romijn, L.; Pigneret, C.; Lok, S.; Van Dijk, A.; Shah, K.; Noori, A.; Gelatos, J.; Arghavani, R.; Schreutelkamp, Rob; Boelen, Pieter; Richard, Olivier; Bender, Hugo; Witters, Liesbeth; Collaert, Nadine; Rooyackers, Rita; Absil, Philippe; Lauwers, Anne; Jurczak, Gosia; Hoffmann, Thomas Y.; Vanhaelemeersch, Serge; Cartuyvels, Rudi; Ronse, Kurt; Biesemans, Serge (2008) -
FUSI specific yield monitoring enabling improved circuit performance and fast feedback to production
Chiarella, Thomas; Rosmeulen, Maarten; Tigelaar, Howard; Kerner, Christoph; Nackaerts, Axel; Ramos, Javier; Lauwers, Anne; Veloso, Anabela; Jurczak, Gosia; Rothschild, Aude; Witters, Liesbeth; Yu, HongYu; Kittl, Jorge; Verbeeck, Rita; de Potter de ten Broeck, Muriel; Debusschere, Ingrid; Absil, Philippe; Biesemans, Serge; Hoffmann, Thomas Y. (2007-03) -
High yield sub-0.1μm² 6T-SRAM Cells, featuring high-k/metal-gate Finfet devices, double gate patterning, a novel Fin etch strategy, full-field EUV lithography and optimized junction design & layout
Horiguchi, Naoto; Demuynck, Steven; Ercken, Monique; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Vandeweyer, Tom; Baerts, Christina; Mannaert, Geert; Truffert, Vincent; Verluijs, j; Alaerts, Wilfried; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Vandenberghe, Geert; Beyer, Gerald; Lauwers, Anne; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2010) -
High-k dielectrics integration prospects
Kubicek, Stefan; Van Elshocht, Sven; Delabie, Annelies; Yamamoto, Kazuhiko; Beckx, Stephan; Claes, Martine; Van Hoornick, Nausikaa; Kwak, Dong Hwa; Hyun, Sangjin; Rothschild, Aude; Veloso, Anabela; Kottantharayil, Anil; Lujan, Guilherme; Kittl, Jorge; Lauwers, Anne; Kaushik, Vidya; Niwa, Masaaki; De Gendt, Stefan; Heyns, Marc; Jurczak, Gosia; Biesemans, Serge (2005) -
Improved thermal stability of Ni-silicides on Si:C epitaxial layers
Machkaoutsan, Vladimir; Mertens, Sofie; Bauer, R.; Lauwers, Anne; Verheyden, Kurt; Vanormelingen, Koen; Verheyen, Peter; Loo, Roger; Caymax, Matty; Jakschik, Stefan; Theodore, D.; Absil, Philippe; Thomas, S.; Granneman, E.H.A. (2007) -
In-situ curvature and diffraction measurements on thin-film Ni/Ge(100) and Ni/Ge(111) solid state reactions
Opsomer, Karl; Deduytsche, D.; Detavernier, C.; Lavoie, C.; Lauwers, Anne; Van Meirhaeghe, R.L.; Maex, Karen (2007) -
Influence of activation annealing and silicidation process on dopant redistribution and pile-up at the NixSiy/SiO2 interface
Kmieciak, Malgorzata; Kittl, Jorge; Janssens, Tom; Lauwers, Anne; Vandervorst, Wilfried; Kottantharayil, Anil; Schram, Tom; Veloso, Anabela; Van Dal, Mark; Maex, Karen; Vantomme, Andre (2005-05) -
Influence of Ge substrate crystallinity on Co germanide formation in solid-state reactions
Opsomer, Karl; Deduytsche, D.; Detavernier, C.; Van Meirhaeghe, R.L.; Lauwers, Anne; Maex, Karen; Lavoie, C. (2007) -
Integrating diffusionless anneals into advanced CMOS technologies
Surdeanu, Radu; Lindsay, Richard; Severi, Simone; Satta, Alessandra; Pawlak, Bartek; Lauwers, Anne; Dachs, C.J.J.; Henson, Kirklen; McCoy, S.; Gelpey, J.C. (2004) -
Integration of low and high temperature junction anneals for 45nm CMOS
Lindsay, Richard; Pawlak, Bartek; Henson, Kirklen; Satta, Alessandra; Severi, Simone; Lauwers, Anne; Surdeanu, Radu; McCoy, S.; Gelpey, J.; Pagès, Xavier; Maex, Karen (2004)