Browsing by author "Sioncke, Sonja"
Now showing items 21-40 of 128
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Band offsets at interfaces of (100)InxGa1-xAs (0<x<0.53) with Al2O3 and HfO2
Afanasiev, Valeri; Stesmans, Andre; Brammertz, Guy; Delabie, Annelies; Sioncke, Sonja; O'Mahony, E; Povey, I.M.; Pemble, M.E.; O'Connor, E.; Hurley, P.K.; Newcomb, S.B. (2009) -
Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Lin, Dennis; Alian, AliReza; Gupta, S.; Yang, B.; Bury, Erik; Sioncke, Sonja; Degraeve, Robin; Toledano Luque, Maria; Krom, Raymond; Favia, Paola; Bender, Hugo; Caymax, Matty; Saraswat, K.C.; Collaert, Nadine; Thean, Aaron (2012) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
BTI reliability of advanced gate stacks for beyond silicon devices: challenges and opportunities
Groeseneken, Guido; Franco, Jacopo; Cho, Moon Ju; Kaczer, Ben; Toledano Luque, Maria; Roussel, Philippe; Kauerauf, Thomas; Alian, AliReza; Mitard, Jerome; Arimura, Hiroaki; Lin, Dennis; Waldron, Niamh; Sioncke, Sonja; Witters, Liesbeth; Mertens, Hans; Ragnarsson, Lars-Ake; Heyns, Marc; Collaert, Nadine; Thean, Aaron; Steegen, An (2014-12) -
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Mitard, Jerome; Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Waldron, Niamh; Zhou, Daisy; Vais, Abhitosh; Lin, Dennis; Alian, AliReza; Pourghaderi, Mohammad Ali; Martens, Koen; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014) -
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Xie, Qi; Calka, Pauline; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2017) -
Capacitance-frequency estimates of border-trap densities in multi-fin MOS capacitors
Jiang, Rong; Zhang, En Xia; Liao, Wenjun; Liang, Chundong; Fleetwood, Daniel; Schrimpf, Ronald; Reed, Robert; Linten, Dimitri; Mitard, Jerome; Collaert, Nadine; Sioncke, Sonja; Waldron, Niamh (2018) -
Capacitance-voltage (CV) characterization of GaAs-oxide interfaces
Brammertz, Guy; Martens, Koen; Lin, Dennis; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage (CV) characterization of GaAs/high-k oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Merckling, Clement; Penaud, J.; Alian, AliReza; Sioncke, Sonja; Wang, Wei-E; Meuris, Marc; Caymax, Matty; Heyns, Marc (2008) -
Capacitance-voltage (CV)characterization of GaAs-oxide interfaces
Brammertz, Guy; Lin, H.C.; Martens, Koen; Mercier, David; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage characterization of GaAs-Al2O3 interfaces
Brammertz, Guy; Lin, Dennis; Martens, Koen; Mercier, David; Sioncke, Sonja; Delabie, Annelies; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Capacitance-voltage characterization of GaAs-Oxide interfaces
Brammertz, Guy; Lin, Dennis; Martens, Koen; Mercier, David; Merckling, Clement; Penaud, Julien; Adelmann, Christoph; Sioncke, Sonja; Wang, Wei-E; Caymax, Matty; Meuris, Marc; Heyns, Marc (2008) -
Challenges and opportunities in advanced Ge pMOSFETs
Simoen, Eddy; Mitard, Jerome; Hellings, Geert; Eneman, Geert; De Jaeger, Brice; Witters, Liesbeth; Vincent, Benjamin; Loo, Roger; Delabie, Annelies; Sioncke, Sonja; Caymax, Matty; Claeys, Cor (2012) -
Challenges for atomic layer deposition in CMOS devices with high-mobility channel materials
Delabie, Annelies; Alian, AliReza; Bellenger, Florence; Caymax, Matty; Conard, Thierry; Franquet, Alexis; Sioncke, Sonja; Vandervorst, Wilfried; Van Elshocht, Sven; Heyns, Marc; Meuris, Marc (2009) -
Challenges for introducing Ge and III/V devices into CMOS technologies
Heyns, Marc; Alian, AliReza; Brammertz, Guy; Caymax, Matty; Eneman, Geert; Franco, Jacopo; Gencarelli, Federica; Groeseneken, Guido; Hellings, Geert; Hikavyy, Andriy; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Loo, Roger; Merckling, Clement; Meuris, Marc; Mitard, Jerome; Nyns, Laura; Sioncke, Sonja; Vandervorst, Wilfried; Vincent, Benjamin; Waldron, Niamh; Witters, Liesbeth (2012) -
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
Brammertz, Guy; Martens, Koen; Sioncke, Sonja; Delabie, Annelies; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007-09) -
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Franco, Jacopo; Putcha, Vamsi; Vais, Abhitosh; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Rzepa, Gerhard; Roussel, Philippe; Groeseneken, Guido; Heyns, Marc; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2017) -
Chemisorption reaction mechanisms for atomic layer deposition of high-k oxides on high mobility channel materials
Delabie, Annelies; Sioncke, Sonja; Van Elshocht, Sven; Caymax, Matty; Pourtois, Geoffrey; Pierloot, Kristine (2010)