Browsing by author "Meneghini, Matteo"
Now showing items 21-40 of 56
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Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs
Rossetto, Isabella; Meneghini, Matteo; Bisi, Davide; Barbato, A; Van Hove, Marleen; Marcon, Denis; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2015) -
Impact of solder-joint tilting on the reliability of LED-based PCB assemblies: A combined experimental and FEM analysis
Vandevelde, Bart; Zanon, Franco; Griffoni, Alessio; Li, Xiaoling; Willems, Geert; Meneghini, Matteo (2015) -
Impact of substrate resistivity on the vertical leakage, breakdown, and trapping in GaN-on-Si E-Mode HEMTs
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Li, Xiangdong; Posthuma, Niels; Van Hove, Marleen; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Impact of the substrate and buffer design on the performance of GaN on Si
Borga, Matteo; Meneghini, Matteo; Stoffels, Steve; Van Hove, Marleen; Zhao, Ming; Li, Xiangdong; Decoutere, Stefaan; Zanoni, Enrico; Gaudenzio, Meneghesso (2018) -
Investigation of the impact of hot electrons and high drain bias on the dynamic Ron increase in GaN-based MIS-HEMTs grown on silicon
Meneghini, Matteo; Bisi, Davide; Stoffels, Steve; Marcon, Denis; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2014) -
Kinetics of buffer-related RON-increase in GaN-on-silicon MIS-HEMTs
Bisi, Davide; Meneghini, Matteo; Marino, Fabio; Van Hove, Marleen; Marcon, Denis; Stoffels, Steve; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2014) -
Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Borga, Matteo; Mukherjee, Kalparupa; De Santi, Carlo; Stoffels, Steve; Geens, Karen; You, Shuzhen; Bakeroot, Benoit; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2020) -
Modeling of the vertical leakage current in AlN/Si heterojunctions for GaN power applications
Borga, Matteo; De Santi, Carlo; Stoffels, Steve; Bakeroot, Benoit; Li, Xiangdong; Zhao, Ming; Decoutere, Stefaan; Meneghesso,, Gaudenzio; Meneghini, Matteo; Zanoni, Enrico (2020) -
Negative bias-induced threshold voltage instability (NBTI) in GaN-on-Si power HEMTs
Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Ruzzarin, Maria; Van Hove, Marleen; Stoffels, Steve; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudio; Zanoni, Enrico (2016) -
Normally-off HEMTs with p-GaN gate: stability and lifetime extrapolation
Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Rizzato, Vanessa; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; You, Shuzhen; Posthuma, Niels; Decoutere, Stefaan; Zanoni, Enrico (2016) -
On the CET-Map Ill-Posed Inversion Problem: Theory and Application to GaN HEMTs
Modolo, Nicola; De Santi, Carlo; Baratella, Giulio; Minetto, Andrea; Sayadi, Luca; Sicre, Sebastien; Prechtl, Gerhard; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2024) -
Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability
Stoffels, Steve; Posthuma, Niels; Decoutere, Stefaan; Bakeroot, Benoit; Tallarico, Andrea Natale; Sangiorgi, Enrico; Fiegna, Claudio; Zheng, Jiaxin; Ma, X.; Borga, Matteo; Fabris, Elena; Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio; Priesol, Juraj; Satka, Alexander (2019-04) -
Power GaN HEMT degradation: from time-dependent breakdown to hot-electron effects
Meneghini, Matteo; Barbato, A.; Borga, Matteo; De Santi, Carlos; Barbato, M.; Stoffels, Steve; Zhao, Ming; Posthuma, Niels; Decoutere, Stefaan; Haeberlen, Oliver; Detzel, Thomas; Meneghesso, Gaudenzio; Zanoni, Enrico (2018) -
Reliability analysis of permanent degradations on AlGaN/GaN HEMTs
Marcon, Denis; Meneghesso, Gaudenzio; Wu, Tian-Li; Stoffels, Steve; Meneghini, Matteo; Zanoni, Enrico; Decoutere, Stefaan (2013) -
Reliability and parasitic issues in GaN-based power HEMTs
Meneghesso, Gaudenzio; Meneghini, Matteo; Rossetto, Isabella; Bisi, Davide; Stoffels, Steve; Van Hove, Marleen; Decoutere, Stefaan; Zanoni, Enrico (2016) -
Ron collapse, breakdown and degradation of d-mode MIS-HEMTs based on GaN on Si technology
Meneghini, Matteo; Bisi, Davide; Marcon, Denis; Stoffels, Steve; Van Hove, Marleen; Wu, Tian-Li; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2013) -
Root cause analysis of gate shorts in semi-vertical GaN MOSFET devices
Diehle, Patrick; Hübner, Susanne; De Santi, Carlo; Mukherjee, Kalparupa; Zanoni, Enrico; Meneghini, Matteo; Geens, Karen; You, Shuzhen; Decoutere, Stefaan; Altmann, Frank (2021) -
Scaling of E-mode power GaN-HEMTs for low voltage/low Ron applications: Implications on robustness
Benato, Andrea; De Santi, Carlo; Borga, Matteo; Bakeroot, Benoit; Kuzma Filipek, Izabela; Posthuma, Niels; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo (2023) -
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
Stockman, Arno; Canato, Eleonora; Meneghini, Matteo; Meneghesso, Gaudenzio; Moens, Peter; Bakeroot, Benoit (2021) -
Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis
Rossetto, Isabella; Meneghini, Matteo; Rizzato, Vanessa; Ruzzarin, Maria; Favaron, Andrea; Stoffels, Steve; Van Hove, Marleen; Posthuma, Niels; Wu, Tian-Li; Marcon, Denis; Decoutere, Stefaan; Meneghesso, Gaudenzio; Zanoni, Enrico (2016)