Browsing by author "Schaekers, Marc"
Now showing items 21-40 of 197
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Analysis of trace metals in thin silicon nitride films by total-reflection X-ray fluorescence
Vereecke, Guy; Arnauts, Sophia; Van Doorne, Patrick; Kenis, Karine; Onsia, Bart; Verstraeten, K.; Schaekers, Marc; Van Hoeymissen, Jan; Heyns, Marc (2001) -
Atomic layer deposited barriers for copper interconnects
Schuhmacher, Jorg; Martin Hoyas, Ana; Ernur, Didem; Tokei, Zsolt; Travaly, Youssef; Bruynseraede, Christophe; Satta, Alessandra; Whelan, Caroline; Shamiryan, Denis; Beyer, Gerald; Abell, Thomas; Sutcliffe, Victor; Schaekers, Marc; Maex, Karen (2004) -
Atomic layer deposition of GdAlOx and GdHfOx using Gd(iPr-Cp)3
Adelmann, Christoph; Pierreux, Dieter; Swerts, Johan; Kesters, Jurgen; Richard, Olivier; Conard, Thierry; Franquet, Alexis; Tielens, Hilde; Afanasiev, Valeri; Schaekers, Marc; Van Elshocht, Sven (2009) -
Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Zhao, Chao; Pawlak, Malgorzata; Popovici, Mihaela Ioana; Schaekers, Marc; Sleeckx, Erik; Vancoille, Eric; Wouters, Dirk; Tokei, Zsolt; Kittl, Jorge (2009) -
Atomic layer deposition of Ru and RuO2 for MIMCAP applications
Zhao, Chao; Pawlak, Malgorzata; Schaekers, Marc; Sleeckx, Erik; Vancoille, Eric; Wouters, Dirk; Tokei, Zsolt; Kittl, Jorge (2009) -
Atomic layer deposition of ruthenium at 100°C using the RuO4-precursor and H2
Minjauw, Matthias; Dendooven, Jolien; Capon, Boris; Schaekers, Marc; Detavernier, Christophe (2015) -
Atomic layer deposition of ZrO2, TiO2, and ZrTiO4 thin films
Opsomer, Karl; Schaekers, Marc; Rampelberg, G.; Deduytsche, D.; Detavernier, C.; Kittl, Jorge (2009) -
Barrier deposition for advanced interconnects
Schaekers, Marc; Tokei, Zsolt; Li, Yong-Li; Carbonell, Laure (2007) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
CD control using SiON BARL processing for sub-0.25μm lithography
Zhang, Fenghong; Op de Beeck, Maaike; Schaekers, Marc; Ronse, Kurt; Conley, W.; Gopalan, P.; Gangala, Hareen K; Dusa, M.; Bendik, Joe (1999) -
Challenges in scaling of CMOS devices towards 65nm node
Jurczak, Gosia; Veloso, Anabela; Rooyackers, Rita; Augendre, Emmanuel; Mertens, Sofie; Rothschild, Aude; Schaekers, Marc; Lindsay, Richard; Lauwers, Anne; Henson, Kirklen; Severi, Simone; Pollentier, Ivan; De Keersgieter, An (2003-06) -
Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109
Das, Arabinda; Kokubo, Terukazu; Furukawa, Yukiko; Struyf, Herbert; Vos, Ingrid; Sijmus, Bram; Iacopi, Francesca; Van Aelst, Joke; Le, Quoc Toan; Carbonell, Laure; Brongersma, Sywert; Maenhoudt, Mireille; Tokei, Zsolt; Vervoort, Iwan; Sleeckx, Erik; Stucchi, Michele; Schaekers, Marc; Boullart, Werner; Rosseel, Erik; Van Hove, Marleen; Vanhaelemeersch, Serge; Shiota, A.; Maex, Karen (2002) -
Characterization and integration in Cu damascene structures of AURORA, an inorganic low-k dielectric
Alves Donaton, Ricardo; Coenegrachts, Bart; Sleeckx, Erik; Schaekers, Marc; Sophie, Guus; Matsuki, N.; Baklanov, Mikhaïl; Struyf, Herbert; Lepage, Muriel; Vanhaelemeersch, Serge; Beyer, Gerald; Stucchi, Michele; De Roest, David; Maex, Karen (2001) -
Characterization and optimization of porogen based PECVD deposited extreme low-k materials as a function of UV-cure time
Verdonck, Patrick; De Roest, David; Kaneko, Shinya; Caluwaerts, Rudy; Tsuji, Naoto; Matsushita, Kiyohiro; Kemeling, Nathan; Travaly, Youssef; Sprey, Hessel; Schaekers, Marc; Beyer, Gerald (2007) -
Characterization of (ultra)thin dielectrica
Vandervorst, Wilfried; De Witte, Hilde; Conard, Thierry; Janssens, Tom; Schaekers, Marc; Brijs, Bert; Houssa, Michel (2000) -
Characterization of ultra-thin nickel-silicide films synthesized using the solid state reaction of Ni with an underlying Si:P substrate (P: 0.7 to 4.0%)
Peter, Antony; Yu, Hao; Dutta, Shibesh; Rosseel, Erik; Van Elshocht, Sven; Paulussen, Kris; Moussa, Alain; Vaesen, Inge; Schaekers, Marc (2016) -
Chlorine precursors for gate oxidation processes
Mc Geary, M. J.; Mertens, Paul; Vermeire, Bert; Heyns, Marc; Sprey, Hessel; Lubbers, A.; Schaekers, Marc (1997) -
Compatibility of polysilicon with HfO2-based gate dielectrics for CMOS applications
Kaushik, V.; De Gendt, Stefan; Caymax, Matty; Young, E.; Röhr, Erika; Van Elshocht, Sven; Delabie, Annelies; Claes, Martine; Shi, Xiaoping; Chen, Jerry; Carter, Richard; Conard, Thierry; Vandervorst, Wilfried; Schaekers, Marc; Heyns, Marc (2003) -
Comprehensive study of Ga Activation in Si, SiGe and Ge and 5 x 10-10 $Xcm2 contact resistivity achieved on Ga doped Ge using nanosecond laser activation
Wang, Linlin; Yu, Hao; Schaekers, Marc; Everaert, Jean-Luc; Franquet, Alexis; Douhard, Bastien; Date, Lucien; del Agua Borniquel, Jose Ignacio; Hollar, Kelly; Khaja, Fareen; Aderhold, Wolfgang; Mayur, Abhilash; Lee, J.Y.; van Meer, Hans; Mocuta, Dan; Horiguchi, Naoto; Collaert, Nadine; De Meyer, Kristin; Jiang, Yu-Long (2017) -
Contact module at dense gate pitch technology challenges
Demuynck, Steven; Mao, Ming; Kunnen, Eddy; Versluijs, Janko; Croes, Kristof; Wu, Chen; Schaekers, Marc; Peter, Antony; Kauerauf, Thomas; Teugels, Lieve; Boemmels, Juergen (2014)