Browsing by author "Badenes, Gonçal"
Now showing items 41-60 of 75
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Investigation of stress in STI using UV-Raman spectroscopy
Dombrowski, Kai; Dietrich, B.; De Wolf, Ingrid; Rooyackers, Rita; Badenes, Gonçal (1999) -
L-shape spacer architecture for low cost, high performance CMOS
Augendre, Emmanuel; Perello, Carles; Vandamme, Ewout; Pochet, Sandrine; Rooyackers, Rita; Beckx, Stephan; de Potter de ten Broeck, Muriel; Lauwers, A.; Badenes, Gonçal (2001) -
Leakage current mechanisms in shallow p-n junction diodes using advanced isolation schemes
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Rooyackers, Rita; Badenes, Gonçal (2000) -
Lifetime and leakage current studies in shallow p-n junctions fabricated in a high-energy boron implanted p-well
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Rooyackers, Rita; Badenes, Gonçal; Gaubas, Eugenijus (2000) -
Lifetime study in advanced isolation techniques
Poyai, Amporn; Simoen, Eddy; Claeys, C.; Rooyackers, Rita; Badenes, Gonçal (2000) -
Lifetime study in advanced isolation techniques
Poyai, Amporn; Simoen, Eddy; Claeys, Cor; Rooyackers, Rita; Badenes, Gonçal (2001) -
Morphology and defects in shallow trench isolation structures
Stuer, Cindy; Van Landuyt, J.; Bender, Hugo; Rooyackers, Rita; Badenes, Gonçal (1999) -
NO post annealed oxide versus re-oxidised NO oxide
Kubicek, Stefan; Schaekers, Marc; De Keersgieter, An; Augendre, Emmanuel; Badenes, Gonçal; De Meyer, Kristin (2000) -
Optimisation of a pre-metal-dielectric with a contact etch stop layer for 0.18μm and 0.13μm technologies
De Jaeger, Brice; Van den bosch, G.; Van Hove, Marleen; Debusschere, Ingrid; Schaekers, Marc; Badenes, Gonçal (2000) -
Optimisation of active area edge protection in shallow trench isolation
Augendre, Emmanuel; Rooyackers, Rita; Pochet, Sandrine; Grau, Lluis; Sleeckx, Erik; Vandamme, Ewout; Badenes, Gonçal (2001) -
Optimisation of critical parameters in a low cost, high performance deep submicron CMOS technology
Badenes, Gonçal; Perello, Carles; Rupp, Andreas; Vandamme, Ewout; Augendre, Emmanuel; Pochet, Sandrine; Deferm, Ludo (1999) -
Optimization of polysilicon encapsulated local oxidation of silicon
Badenes, Gonçal; Rooyackers, Rita; Jones, S. K.; Bazley, D.; Beanland, R.; De Wolf, Ingrid; Deferm, Ludo (1998) -
Optimization of polysilicon encapsulated LOCOS for 0.25 micron CMOS: correlation between cavity dimensions, mechanical stress, and gate oxide integrity
Badenes, Gonçal; Rooyackers, Rita; Jones, S. K.; Bazley, D.; Beanland, R.; De Wolf, Ingrid; Deferm, Ludo (1997) -
Performance and reliability aspects of FOND: A new deep submicron CMOS device concept
Bellens, Rudi; Van den Bosch, Geert; Habas, Predrag; Mieville, Jean-Paul; Badenes, Gonçal; Clerix, Andre; Groeseneken, Guido; Deferm, Ludo; Maes, Herman (1996) -
Poly encapsulated LOCOS lateral isolation for 0.25 µm CMOS
Badenes, Gonçal; Rooyackers, Rita; Deferm, Ludo (1996) -
Polysilicon encapsulated local oxidation of silicon for deep submicron lateral isolation
Badenes, Gonçal; Rooyackers, Rita; De Wolf, Ingrid; Deferm, Ludo (1997) -
Polysilicon encapsulated LOCOS for deep submicron CMOS lateral isolation
Badenes, Gonçal; Rooyackers, Rita; De Wolf, Ingrid; Deferm, Ludo (1996) -
Polysilicon encapsulated LOCOS: a technique for deep submicron lateral isolation
Badenes, Gonçal; Rooyackers, Rita; Deferm, Ludo (1997) -
Process and device design influence on the ESD performance of a fully silicided 0.25mm CMOS technology
Bock, Karlheinz; Russ, Christian; Badenes, Gonçal; Groeseneken, Guido; Deferm, Ludo (1997) -
Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS
Grau, Lluis; Augendre, Emmanuel; Simoen, Eddy; Rooyackers, Rita; Claeys, C.; Badenes, Gonçal; Romano-Rodriguez, A. (2001)