Browsing by author "Vandenberghe, Geert"
Now showing items 41-60 of 222
-
Comparisons of 9% versus 6% transmission attenuated phase-shift mask for the 65nm device mode
Montgomery, Patrick K.; Lucas, Kevin D.; Litt, Lloyd C.; Conley, Will; Fanucchi, Eric; van Wingerden, Johannes; Vandenberghe, Geert; Wiaux, Vincent; Taylor, Darren; Cangemi, Michael J.; Kasprowicz, Bryan (2003-12) -
Compensating mask topography effects in CPL through-pitch solutions toward the 45nm node
Bekaert, Joost; Philipsen, Vicky; Vandenberghe, Geert; van den Broeke, Doug; Degel, Wolfgang; Zibold, Axel (2005) -
Complementary dipole exposure solutions at 0.29k1
Hendrickx, Eric; Torres, Andres; Lafferty, Neal; Le Cam, Laurent; Johnson, Stephen; Reita, Carlo; Vandenberghe, Geert; Maurer, Wilhelm (2005) -
Complementary phase-shift mask towards 70-nm technology node
Driessen, Frank; Vandenberghe, Geert; Ercken, Monique; Montgomery, Patrick; Ronse, Kurt; Van Adrichem, Paul; Li, J.; Liu, H.Y.; Karklin, L. (2002) -
Contact hole multiplication using grapho-epitaxy directed self-assembly: process choices, template optimization, and placement accuracy
Bekaert, Joost; Gronheid, Roel; MKuppuswamy, Vijaya Kumar; Doise, Jan; Chan, BT; Vandenberghe, Geert; Sayan, Safak; Cao, Yi; Her, YoungJun (2014) -
Contact hole multiplication using grapho-epitaxy directed self-assembly: process choices, template optimization, and placement accuracy
Bekaert, Joost; Doise, Jan; MKuppuswamy, Vijaya Kumar; Chan, BT; Gronheid, Roel; Vandenberghe, Geert; Cao, Yi; Her, YoungJun (2014) -
Contact hole multiplication using grapho-epitaxy directed self-assembly: process choices, template optimization, and placement accuracy
Bekaert, Joost; Doise, Jan; MKuppuswamy, Vijaya Kumar; Gronheid, Roel; Chan, BT; Vandenberghe, Geert; Cao, Yi; Her, YoungJun (2014) -
Contact layer printing at 0.28k1 by means of double line exposure and negative tone development
Bekaert, Joost; Maenhoudt, Mireille; Vandenberghe, Geert; Reybrouck, Mario (2008) -
Current status of 193 nm immersion lithography and outlook to the future
Ronse, Kurt; Cheng, Shaunee; Ercken, Monique; Leunissen, Peter; Maenhoudt, Mireille; Vandenberghe, Geert; Van den hove, Luc (2005) -
Defect mitigation in sub-20 nm patterning with high-chi, silicon containing block copolymers
Doise, Jan; Mannaert, Geert; Suh, Hyo Seon; Rincon Delgadillo, Paulina; Vandenberghe, Geert; Willson, C. Grant; Ellison, Christopher J. (2018) -
Demonstration of an N7 integrated fab process for metal oxide EUV photoresist
De Simone, Danilo; Mao, Ming; Kocsis, Michael; De Schepper, Peter; Lazzarino, Frederic; Vandenberghe, Geert; Yamashita, Fumiko; Stowers, Jason; Meyers, Steven; Grenville, Andrew; Luong, Vinh; Parnell, Doni; Clark, Benjamin L. (2016) -
Demonstration of scaled 0.099μm² FinFET 6T-SRAM cell using full-field EUV lithography for (Sub-)22nm node single-patterning technology
Veloso, Anabela; Demuynck, Steven; Ercken, Monique; Goethals, Mieke; Locorotondo, Sabrina; Lazzarino, Frederic; Altamirano Sanchez, Efrain; Huffman, Craig; De Keersgieter, An; Brus, Stephan; Demand, Marc; Struyf, Herbert; De Backer, Johan; Hermans, Jan; Delvaux, Christie; Baudemprez, Bart; Vandeweyer, Tom; Van Roey, Frieda; Baerts, Christina; Goossens, Danny; Dekkers, Harold; Ong, Patrick; Heylen, Nancy; Kellens, Kristof; Volders, Henny; Hikavyy, Andriy; Vrancken, Christa; Rakowski, Michal; Verhaegen, Staf; Dusa, Mircea; Romijn, Leon; Pigneret, Charles; van Dijk, Andre; Schreutelkamp, Rob; Cockburn, Andrew; Gravey, Virginie; Meiling, H.; Hultermans, B.; Lok, S.; Shah, K.; Rajagopalan, R.; Gelatos, J.; Richard, Olivier; Bender, Hugo; Vandenberghe, Geert; Beyer, Gerald; Absil, Philippe; Hoffmann, Thomas Y.; Ronse, Kurt; Biesemans, Serge (2009-12) -
Design method and algorithms for directed self-assembly aware via layout decomposition in sub-7 nm circuits
Karageorgos, Ioannis; Ryckaert, Julien; Gronheid, Roel; Tung, Maryann C.; Wong, H.-S. Philip; Karageorgos, Evangelos; Croes, Kris; Bekaert, Joost; Vandenberghe, Geert; Stucchi, Michele; Dehaene, Wim (2016-11) -
Design method for the integration of DSA via patterning in sub-7 nm circuits
Karageorgos, Ioannis; Ryckaert, Julien; Croes, Kris; Tung, C. Maryann; Wong, H. -S. Philip; Karageorgos, Evangelos; Gronheid, Roel; Bekaert, Joost; Vandenberghe, Geert; Stucchi, Michele; Dehaene, Wim (2016) -
Design split and double exposure for contact hole printing at 0.40 k1 and beyond
Köhler, Carsten; van Praagh, Judith; Finders, Jo; Wiaux, Vincent; Vandenberghe, Geert (2004) -
Design strategy for integrating DSA via patterning in sub-7 nm interconnects
Karageorgos, Ioannis; Ryckaert, Julien; Tung, C. Maryann; Wong, H.-S. Philip; Gronheid, Roel; Bekaert, Joost; Croes, Kris; Karageorgos, Evangelos; Vandenberghe, Geert; Stucchi, Michele; Dehaene, Wim (2016) -
Development of main chain scission type photoresists for EUV lithography
Shirotori, Akihide; Vesters, Yannick; Hoshino, Manabu; Rathore, Ashish; De Simone, Danilo; Vandenberghe, Geert; Matsumoto, Hirokazu (2019) -
Development on main chain scission resists for high-NA EUV lithography
Shirotori, Akihide; Hoshino, Manabu; Fujimura, Makoto; Yeh, Sin Fu; Suh, Hyo Seon; De Simone, Danilo; Vandenberghe, Geert; Sanuki, Hideaki (2023) -
Difference in EUV photoresist design towards reduction of LWR and LCDU
Jiang, Jing; De Simone, Danilo; Vandenberghe, Geert (2017) -
Directed self-assembly (DSA) grapho-epitaxy template generation with immersion lithography
Ma, Yuansheng; Lei, Junjiang; Torres, J. Andres; Hong, Le; Word, James; Fenger, Germain; Tritchkov, Alexander; Lippincott, George; Gupta, Rachit; Lafferty, Neal; He, Yuan; Bekaert, Joost; Vandenberghe, Geert (2015)