Browsing by author "Delhougne, Romain"
Now showing items 41-60 of 104
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Fabrication of 50nm high performance strained-SiGe pMOSFETs with selective epitaxial growth
Loo, Roger; Collaert, Nadine; Verheyen, Peter; Caymax, Matty; Delhougne, Romain; De Meyer, Kristin (2004) -
Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Eneman, Geert; Verheyen, Peter; Rooyackers, Rita; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Fabrication of strained Si NMOS transistors on thin buffer layers with selective and non-selective epitaxial growth techniques
Eneman, Geert; Verheyen, Peter; Rooyackers, Rita; Delhougne, Romain; Loo, Roger; Caymax, Matty; Meunier-Beillard, Philippe; De Meyer, Kristin; Vandervorst, Wilfried (2004) -
Feasibility of InxGa1-xAs high mobility channel for 3-D NAND memory
Capogreco, Elena; Subirats, Alexandre; Lisoni, Judit Gloria; Arreghini, Antonio; Kunert, Bernardette; Guo, Weiming; Tan, Chi Lim; Delhougne, Romain; Van den Bosch, Geert; De Meyer, Kristin; Furnemont, Arnaud; Van Houdt, Jan (2017) -
First demonstration of monocrystalline silicon macaroni channel for 3-D NAND memory devices
Delhougne, Romain; Arreghini, Antonio; Rosseel, Erik; Hikavyy, Andriy; Vecchio, Emma; Zhang, Liping; Pak, Murat; Nyns, Laura; Raymaekers, Tom; Jossart, Nico; Breuil, Laurent; Vadakupudhu Palayam, Senthil; Tan, ChiLim; Van den Bosch, Geert; Furnemont, Arnaud (2018) -
First demonstration of SiGe channel in Macaroni geometry for future 3D NAND devices
Arreghini, Antonio; Delhougne, Romain; Subirats, Alexandre; Hikavyy, Andriy; Van den Bosch, Geert; Furnemont, Arnaud (2017) -
First demonstration of sub-12 nm gate last IGZO-TFTs with oxygen tunnel architecture for front gate devices
Subhechha, Subhali; Rassoul, Nouredine; Belmonte, Attilio; Delhougne, Romain; Donadio, Gabriele Luca; Banerjee, Kaustuv; Dekkers, Harold; van Setten, Michiel; Mao, Ming; Puliyalil, Harinarayanan; Kundu, Shreya; Pak, Murat; Teugels, Lieve; Tsvetanova, Diana; Bazzazian, Nina; Klijs, Lars; Vaisman Chasin, Adrian; Heijlen, Jeroen; Kar, Gouri Sankar (2021) -
Formation of misfit dislocations at the thin strained Si/strain relaxed buffer interface
Loo, Roger; Delhougne, Romain; Caymax, Matty; Ries, Mike (2005-10) -
Ge-migration in s-Si-SiGe structures during implantation and annealing
Vandervorst, Wilfried; Janssens, Tom; Geenen, Luc; Loo, Roger; Caymax, Matty; Delhougne, Romain; Pawlak, Bartek; Ravit, Claire (2005) -
High performance La-doped HZO based ferroelectric capacitors by interfacial engineering
Popovici, Mihaela Ioana; Bizindavyi, Jasper; Favia, Paola; Clima, Sergiu; Alam, Md Nur Kutubul; Ramachandran, R. K.; Walke, Amey; Celano, Umberto; Leonhardt, A.; Mukherjee, Shankha; Richard, Olivier; Illiberi, A.; Givens, M.; Delhougne, Romain; Van Houdt, Jan; Kar, Gouri Sankar (2022) -
High-Endurance Ferroelectric (La, Y) and (La, Gd) Co-Doped Hafnium Zirconate Grown by Atomic Layer Deposition
Popovici, Mihaela Ioana; Walke, Amey; Bizindavyi, Jasper; Meersschaut, Johan; Banerjee, Kaustuv; Potoms, Goedele; Katcko, Kostantine; Van den Bosch, Geert; Delhougne, Romain; Kar, Gouri Sankar; Van Houdt, Jan (2022) -
High-performance (EOT<0.4nm, Jg~10-7A/cm2) ALD-deposited Ru\SrTiO3 stack for next generations DRAM pillar capacitor
Popovici, Mihaela Ioana; Belmonte, Attilio; Oh, Hyungrock; Potoms, Goedele; Meersschaut, Johan; Richard, Olivier; Hody, Hubert; Van Elshocht, Sven; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2018) -
IGZO-based compute cell for analog in-memory computing - DTCO analysis to enable ultralow-power AI at edge
Saito, Daisuke; Doevenspeck, Jonas; Cosemans, Stefan; Oh, Hyungrock; Perumkunnil, Manu; Papistas, Ioannis; Belmonte, Attilio; Rassoul, Nouredine; Delhougne, Romain; Kar, Gouri Sankar; Debacker, Peter; Mallik, Arindam; Verkest, Diederik; Na, Myung Hee (2020) -
Impact of La-OH bonds on the retention of Co/LaSiO CBRAM
Radhakrishnan, Janaki; Belmonte, Attilio; Nyns, Laura; Devulder, Wouter; Vereecke, Guy; Donadio, Gabriele Luca; Kumbhare, P; Delhougne, Romain; Houssa, Michel; Kar, Gouri Sankar; Goux, Ludovic (2020) -
Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching
Zhou, Xue; Hu, Zeyu; Chai, Zheng; Zhang, Weidong; Clima, Sergiu; Degraeve, Robin; Zhang, Jian Fu; Fantini, Andrea; Garbin, Daniele; Delhougne, Romain; Goux, Ludovic; Kar, Gouri Sankar (2022) -
Impact of strain and strain-relaxation on the low-frequency noise of SRB silicon n-MOSFETs
Simoen, Eddy; Eneman, Geert; Claeys, Cor; Verheyen, Peter; Delhougne, Romain; Loo, Roger; De Meyer, Kristin (2005) -
In depth analysis of 3D NAND enablers in gate stack integration and demonstration in 3D devices
Tan, Chi Lim; Lavizzari, Simone; Blomme, Pieter; Breuil, Laurent; Vecchio, Emma; Sebaai, Farid; Paraschiv, Vasile; Tao, Zheng; Schepers, Bart; Nyns, Laura; Peter, Antony; Dekkers, Harold; Ong, Patrick; Tsvetanova, Diana; Devriendt, Katia; Teugels, Lieve; Heylen, Nancy; Raymaekers, Tom; Jossart, Nico; Mennella, Pasquale; Delhougne, Romain; Vadakupudhu Palayam, Senthil; Arreghini, Antonio; Van den Bosch, Geert; Furnemont, Arnaud (2017) -
In silico screening for As/Se-free ovonic threshold switching materials
Clima, Sergiu; Matsubayashi, Daisuke; Ravsher, Taras; Garbin, Daniele; Delhougne, Romain; Kar, Gouri Sankar; Pourtois, Geoffrey (2023) -
In-line and non-destructive analysis of epitaxial Si1-x-yGexCy
Loo, Roger; Delhougne, Romain; Geenen, Luc; Brijs, Bert; Vandervorst, Wilfried; Meunier-Beillard, Philippe; Koumoto, T. (2004) -
In-line and non-destructive analysis of epitaxial Si1-x-yGexCy by spectroscopic ellipsometry and comparison with other established techniques
Loo, Roger; Meunier-Beillard, Philippe; Delhougne, Romain; Koumoto, T.; Geenen, Luc; Brijs, Bert; Vandervorst, Wilfried (2003)