Browsing imec Publications by imec author "50999a38ef05db4fad12ffb9c25bb108b04a95d3"
Now showing items 1-20 of 52
-
3D technologies for analog/RF applications
Vandooren, Anne; Parvais, Bertrand; Witters, Liesbeth; Walke, Amey; Vais, Abhitosh; Merckling, Clement; Lin, Dennis; Waldron, Niamh; Wambacq, Piet; Mocuta, Dan; Collaert, Nadine (2017) -
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
Hsu, B.; Syshchyk, O.; Vais, Abhitosh; Yu, Hao; Alian, AliReza; Mols, Yves; Vondkar Kodandarama, Komal; Kunert, Bernardette; Waldron, Niamh; Simoen, Eddy; Collaert, Nadine (2021) -
A new direction for III-V FETs for mobile CPU operation uncluding burst-mode: In0.35Ga0.65As channel
Rakshit, T.; Obradovic, B.; Wang, W.-E.; Kim, Weon Hong; Shin, Keo Myoung; Baek, Seongcheol; Lee, Sung Woo; Kim, S.-H.; Lee, J.-M.; Kim, Daeyong; Hoover, A.; Song, W.-B.; Cantoro, M.; Heo, Y.-C.; Rooyackers, Rita; Ardila, S.C.; Vais, Abhitosh; Lin, Dennis; Collaert, Nadine; Rodder, M.S. (2017) -
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Vais, Abhitosh; Franco, Jacopo; Martens, Koen; Lin, Dennis; Sioncke, Sonja; Putcha, Vamsi; Nyns, Laura; Maes, Jan; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, Xiaoqiang; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2017) -
A study of oxide defects in III-V MOS devices using electrical and mathematical methods
Vais, Abhitosh (2016-10) -
A unified two-band model for oxide traps and interface states in MOS capacitors
Taur, Yuan; Chen, Han-Ping; Xie, Qian; Ahn, Jaesoo; McIntyre, Paul; Lin, Dennis; Vais, Abhitosh; Veskler, Dimitri (2015) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
An analytical model of MOS admittance for border trap density extraction in high-k dielectrics of III-V MOS devices
Vais, Abhitosh; Martens, Koen; Lin, Dennis; Mocuta, Anda; Collaert, Nadine; Thean, Aaron; De Meyer, Kristin (2016) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Mitard, Jerome; Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Waldron, Niamh; Zhou, Daisy; Vais, Abhitosh; Lin, Dennis; Alian, AliReza; Pourghaderi, Mohammad Ali; Martens, Koen; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014) -
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Xie, Qi; Calka, Pauline; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2017) -
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Franco, Jacopo; Putcha, Vamsi; Vais, Abhitosh; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Rzepa, Gerhard; Roussel, Philippe; Groeseneken, Guido; Heyns, Marc; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2017) -
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021) -
Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
Lin, Dennis; Asselberghs, Inge; Vais, Abhitosh; Arutchelvan, G.; Delabie, Annelies; Heyns, Marc; Mocuta, Anda; Radu, Iuliana; Thean, Aaron (2015) -
Deep-level transient spectroscopy of GaAs nanoridge diodes grown on Si substrates
Syshchyk, Olga; Hsu, Brent; Yu, Hao; Motsnyi, Vasyl; Vais, Abhitosh; Kunert, Bernardette; Mols, Yves; Alcotte, Reynald; Puybaret, Renaud; Waldron, Niamh; Soussan, Philippe; Boulenc, Pierre; Karve, Gauri; Simoen, Eddy; Collaert, Nadine; Puers, Bob; Van Hoof, Chris (2020) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors fron capacitance-voltage characteristics measured at various temperatures
Dou, Chunmeng; Lin, Dennis; Vais, Abhitosh; Ivanov, Tsvetan; Chen, Han-Ping; Martens, Koen; Kakushima, Kuniyuki; Iwai, Hiroshi; Taur, Yuan; Thean, Aaron; Groeseneken, Guido (2014) -
Effective contact resistivity reduction for Mo/Pd/n-In0.53Ga0.47As contact
Zhang, Jian; Wang, Linlin; Yu, Hao; Merckling, Clement; Mols, Yves; Vais, Abhitosh; Ramesh, Siva; Ivanov, Tsvetan; Schaekers, Marc; Horiguchi, Naoto; Mocuta, Dan; Collaert, Nadine; De Meyer, Kristin; Jiang, Yulong (2019)