Recently added

The canonical ensemble revisited: a projection operator approach

Magnus, Wim; Brosens, Fons (2016)

Fast transient convolution-based thermal modeling methodology for including the package thermal impact in 3D-ICs

Maggioni, Federica; Oprins, Herman; Beyne, Eric; De Wolf, Ingrid; Baelmans, Martine (2016)

Convolution Based Modeling Methodology for the Fast Thermal Analysis of 3D-ICs

Maggioni, Federica (2016-05)

n-Channel bulk and DTMOS FinFETs: investigation of GIDL and gate leakage currents

Magan, Caio M.; Martino, Joao A.; Simoen, Eddy; Claeys, Cor; de Andrade, Maria Gloria C. (2016)

Saturation Photo-Voltage methodology for semiconductor insulator interface trap spectroscopy

Madia, Oreste; Afanasiev, Valeri; Cott, Daire; Arimura, Hiroaki; Schulte-Braucks, C.; Lin, Dennis; Buca, D.; Von Den Driesch, N.; Nyns, Laura; Ivanov, Tsvetan; Cuypers, Dieter; Stesmans, Andre (2016)

Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses

Macambira, Christian M.; Itocazu, Victor T.; Almeida, Luciano M.; Martino, Joao; Simoen, Eddy; Claeys, Cor (2016)

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Ma, Jigang; Zhang, Wei Dong; Zhang, Jian Fu; Benbakhti, Brahim; Li, Zhigang; Mitard, Jerome; Arimura, Hiroaki (2016)

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Ma, Jigang; Chai, Zheng; Zhang, Weidong; Govoreanu, Bogdan; Zhang, Jiang F.; Ji, Z.; Benbakhti, B.; Groeseneken, Guido; Jurczak, Malgorzata (2016)

Optimized EUV mask absorber stack for improved imaging by reducing roughness and crystallinity of alternative absorber materials

Luong, Vu; Philipsen, Vicky; Hendrickx, Eric; Scholze, Frank; van de Kruijs, Robbert; Edrisi, Arash; Wood, Obert; Heyns, Marc (2016)

Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study

Lu, Augustin; Pourtois, Geoffrey; Agarwal, Saurabh; Afzalian, Aryan; Radu, Iuliana; Houssa, Michel (2016)

Study of the plasma metabolic phenotype by NMR spectroscopy and evaluation of its ability to detect lung cancer

Louis, Evelyne (2016-01)

Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

Lorusso, Gian; Inoue, Osamu; Ohashi, Takeyoshi; Altamirano Sanchez, Efrain; Constantoudis, Vassilios; Koshihara, Shunsuke (2016)

Ge epitaxial growth in view of optical device applications

Loo, Roger; Srinivasan, Ashwyn; Shimura, Yosuke; Porret, Clément; Van Thourhout, Dries; Van Deun, Rik; Stoica, Toma; Buca, Dan; Van Campenhout, Joris (2016)

Processing technologies for advanced Ge devices

Loo, Roger; Hikavyy, Andriy; Witters, Liesbeth; Schulze, Andreas; Arimura, Hiroaki; Cott, Daire; Porret, Clément; Mertens, Hans; Ryan, Paul; Wall, John; Matney, Kevin; Wormington, Matthew; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2016-10)

Processing technologies for advanced Ge devices

Loo, Roger; Hikavyy, Andriy; Witters, Liesbeth; Schulze, Andreas; Arimura, Hiroaki; Cott, Daire; Mitard, Jerome; Porret, Clément; Mertens, Hans; Ryan, Paul; Wall, John; Matney, Kevin; Wormington, Matthew; Favia, Paola; Richard, Olivier; Bender, Hugo; Horiguchi, Naoto; Collaert, Nadine; Thean, Aaron (2016-09)

imec Publications: Recent submissions

The canonical ensemble revisited: a projection operator approach

Fast transient convolution-based thermal modeling methodology for including the package thermal impact in 3D-ICs

Convolution Based Modeling Methodology for the Fast Thermal Analysis of 3D-ICs

n-Channel bulk and DTMOS FinFETs: investigation of GIDL and gate leakage currents

Saturation Photo-Voltage methodology for semiconductor insulator interface trap spectroscopy

Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Optimized EUV mask absorber stack for improved imaging by reducing roughness and crystallinity of alternative absorber materials

Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study

Study of the plasma metabolic phenotype by NMR spectroscopy and evaluation of its ability to detect lung cancer

Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

Ge epitaxial growth in view of optical device applications

Processing technologies for advanced Ge devices

Processing technologies for advanced Ge devices

International collaboration: the path to breakthroughs in (Si)GeSn material development

High-current InP-based triple heterojunction tunnel transistors

Identification of key factors to reduce stress induced during 3D IC's assembly

Molecular doping of MoS2 transistors by self-assembled oleylamine networks

Insight on the characterization of MoS2 based devices and requirements for logic device integration

imec Publications: Recent submissions

The canonical ensemble revisited: a projection operator approach ﻿

Fast transient convolution-based thermal modeling methodology for including the package thermal impact in 3D-ICs ﻿

Convolution Based Modeling Methodology for the Fast Thermal Analysis of 3D-ICs ﻿

n-Channel bulk and DTMOS FinFETs: investigation of GIDL and gate leakage currents ﻿

Saturation Photo-Voltage methodology for semiconductor insulator interface trap spectroscopy ﻿

Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses ﻿

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs ﻿

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement ﻿

Optimized EUV mask absorber stack for improved imaging by reducing roughness and crystallinity of alternative absorber materials ﻿

Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study ﻿

Study of the plasma metabolic phenotype by NMR spectroscopy and evaluation of its ability to detect lung cancer ﻿

Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process ﻿

Ge epitaxial growth in view of optical device applications ﻿

Processing technologies for advanced Ge devices ﻿

Processing technologies for advanced Ge devices ﻿

International collaboration: the path to breakthroughs in (Si)GeSn material development ﻿

High-current InP-based triple heterojunction tunnel transistors ﻿

Identification of key factors to reduce stress induced during 3D IC's assembly ﻿

Molecular doping of MoS2 transistors by self-assembled oleylamine networks ﻿

Insight on the characterization of MoS2 based devices and requirements for logic device integration ﻿

The canonical ensemble revisited: a projection operator approach

Fast transient convolution-based thermal modeling methodology for including the package thermal impact in 3D-ICs

Convolution Based Modeling Methodology for the Fast Thermal Analysis of 3D-ICs

n-Channel bulk and DTMOS FinFETs: investigation of GIDL and gate leakage currents

Saturation Photo-Voltage methodology for semiconductor insulator interface trap spectroscopy

Ground plane influence on zero-temperature-coefficient in SOI UTBB MOSFETs with different silicon film thicknesses

A comparative study of defect energy distribution and its impact on degradation kinetics in GeO2/Ge and SiON/Si pMOSFETs

Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM ( a-VMCO) by RTN and CVS techniques for memory window improvement

Optimized EUV mask absorber stack for improved imaging by reducing roughness and crystallinity of alternative absorber materials

Origin of the performances degradation of 2D-based MOSFETs in the sub-10 nm regime: a first-principles study

Study of the plasma metabolic phenotype by NMR spectroscopy and evaluation of its ability to detect lung cancer

Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process

Ge epitaxial growth in view of optical device applications

Processing technologies for advanced Ge devices

Processing technologies for advanced Ge devices

International collaboration: the path to breakthroughs in (Si)GeSn material development

High-current InP-based triple heterojunction tunnel transistors

Identification of key factors to reduce stress induced during 3D IC's assembly

Molecular doping of MoS2 transistors by self-assembled oleylamine networks

Insight on the characterization of MoS2 based devices and requirements for logic device integration