Browsing Conference contributions by author "Vais, Abhitosh"
Now showing items 1-20 of 32
-
3D technologies for analog/RF applications
Vandooren, Anne; Parvais, Bertrand; Witters, Liesbeth; Walke, Amey; Vais, Abhitosh; Merckling, Clement; Lin, Dennis; Waldron, Niamh; Wambacq, Piet; Mocuta, Dan; Collaert, Nadine (2017) -
A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies
Hsu, B.; Syshchyk, O.; Vais, Abhitosh; Yu, Hao; Alian, AliReza; Mols, Yves; Vondkar Kodandarama, Komal; Kunert, Bernardette; Waldron, Niamh; Simoen, Eddy; Collaert, Nadine (2021) -
Advanced transistors for high frequency applications
Parvais, Bertrand; Peralagu, Uthayasankaran; Alian, AliReza; Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Walke, Amey; Ingels, Mark; Yu, Hao; Putcha, Vamsi; Khaled, Ahmad; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Yadav, Sachin; ElKashlan, Rana Y.; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Simoen, Eddy; Zhao, Ming; zhao, ellen; De Jaeger, Brice; Fleetwood, D.M.; Langer, Robert; Wambacq, Piet; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2020) -
Beyond-Si materials and devices for more Moore and more than Moore applications
Collaert, Nadine; Alian, AliReza; Arimura, Hiroaki; Boccardi, Guillaume; Eneman, Geert; Franco, Jacopo; Ivanov, Tsvetan; Lin, Dennis; Mitard, Jerome; Ramesh, Siva; Rooyackers, Rita; Schaekers, Marc; Sibaja-Hernandez, Arturo; Sioncke, Sonja; Smets, Quentin; Vais, Abhitosh; Vandooren, Anne; Veloso, Anabela; Verhulst, Anne; Verreck, Devin; Waldron, Niamh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Zhou, Daisy; Thean, Aaron (2016) -
Bias Temperature Instability (BTI) in high-mobility channel devices: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Sioncke, Sonja; Arimura, Hiroaki; Putcha, Vamsi; Alian, AliReza; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Witters, Liesbeth; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri (2016) -
BTI reliability of high-mobility channel devices: SiGe, Ge and InGaAs
Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; Cho, Moon Ju; Grasser, Tibor; Mitard, Jerome; Arimura, Hiroaki; Witters, Liesbeth; Cott, Daire; Waldron, Niamh; Zhou, Daisy; Vais, Abhitosh; Lin, Dennis; Alian, AliReza; Pourghaderi, Mohammad Ali; Martens, Koen; Sioncke, Sonja; Collaert, Nadine; Thean, Aaron; Heyns, Marc; Groeseneken, Guido (2014) -
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Putcha, Vamsi; Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Kaczer, Ben; Xie, Qi; Calka, Pauline; Tang, Fu; Jiang, Xiaoqiang; Givens, Michael; Collaert, Nadine; Linten, Dimitri; Groeseneken, Guido (2017) -
Characterization of oxide defects in InGaAs MOS gate stacks for high-mobility n-channel MOSFETs
Franco, Jacopo; Putcha, Vamsi; Vais, Abhitosh; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Rzepa, Gerhard; Roussel, Philippe; Groeseneken, Guido; Heyns, Marc; Collaert, Nadine; Linten, Dimitri; Grasser, Tibor; Kaczer, Ben (2017) -
DC and RF Characterization of Nano-ridge HBT Technology Integrated on 300 mm Si Substrates
Yadav, Sachin; Vais, Abhitosh; ElKashlan, Rana Y.; Witters, Liesbeth; Vondkar Kodandarama, Komal; Mols, Yves; Walke, Amey; Yu, Hao; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Parvais, Bertrand; Collaert, Nadine (2021) -
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Franco, Jacopo; Vais, Abhitosh; Sioncke, Sonja; Putcha, Vamsi; Kaczer, Ben; Shie, Bo-Shiuan; Shi, Xiaoping; Reyhaneh, Mahlouji; Nyns, Laura; Zhou, Daisy; Waldron, Niamh; Maes, Jan; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Arimura, Hiroaki; Schram, Tom; Ragnarsson, Lars-Ake; Sibaja-Hernandez, Arturo; Hellings, Geert; Horiguchi, Naoto; Heyns, Marc; Groeseneken, Guido; Linten, Dimitri; Collaert, Nadine; Thean, Aaron (2016) -
Electron traps at sidewalls of vertical n+-GaAs/n--InGaP/p+-GaAs diodes detected with deep-level transient spectroscopy
Yu, Hao; Hsu, Brent; Vais, Abhitosh; Simoen, Eddy; Waldron, Niamh; Collaert, Nadine (2019-06) -
Engineering the IIIV gate stack properties by optimization of the ALD process
Sioncke, Sonja; Ivanov, Tsvetan; Lin, Dennis; Franco, Jacopo; Vais, Abhitosh; Ameen, Mahmoud; Delabie, Annelies; Xie, Qi; Maes, Jan; Givens, Michael; Tang, Fu; Van Elshocht, Sven; Holsteyns, Frank; Barla, Kathy; Collaert, Nadine; Thean, Aaron; De Gendt, Stefan; Heyns, Marc (2014) -
Fabrication challenges and opportunities for high-mobility materials: from CMOS applications to emerging derivative technologies
Collaert, Nadine; Alian, AliReza; De Jaeger, Brice; Peralagu, Uthayasankaran; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yu, Hao; Capogreco, Elena; Devriendt, Katia; Hopf, Toby; Kenis, Karine; Mannaert, Geert; Milenin, Alexey; Peter, Antony; Sebaai, Farid; Teugels, Lieve; van Dorp, Dennis; Wostyn, Kurt; Horiguchi, Naoto; Waldron, Niamh (2019-03) -
First demonstration of III-V HBTs on 300mm Si substrates using nanoridge technology
Vais, Abhitosh; Witters, Liesbeth; Mols, Yves; Sibaja-Hernandez, Arturo; Walke, Amey; Yu, Hao; Deshpande, Paru; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Ingels, Mark; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Waldron, Niamh; Collaert, Nadine (2019-12) -
First demonstration of ~3500 cm2/V-s electron mobility and sufficient BTI reliability (max Vov up to 0.6V) In0.53Ga0.47As nFET using an IL/LaSiOx/HfO2 gate stack
Sioncke, Sonja; Franco, Jacopo; Vais, Abhitosh; Putcha, Vamsi; Nyns, Laura; Sibaja-Hernandez, Arturo; Rooyackers, Rita; Calderon Ardila, Sergio; Spampinato, Valentina; Franquet, Alexis; Maes, Willem; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Heyns, Marc; Linten, Dimitri; Mitard, Jerome; Thean, Aaron; Mocuta, Dan; Collaert, Nadine (2017) -
From 5G to 6G: will compound semiconductors make the difference?
Collaert, Nadine; Alian, AliReza; Banerjee, Aritra; Chauhan, Vikas; ElKashlan, Rana Y.; Hsu, Brent; Ingels, Mark; Khaled, Ahmad; Vondkar Kodandarama, Komal; Kunert, Bernardette; Mols, Yves; Peralagu, Uthayasankaran; Putcha, Vamsi; Rodriguez, Raul; Sibaja-Hernandez, Arturo; Simoen, Eddy; Vais, Abhitosh; Walke, Amey; Witters, Liesbeth; Yadav, Sachin; Yu, Hao; Zhao, Ming; Wambacq, Piet; Parvais, Bertrand; Waldron, Niamh (2020) -
Gate stack thermal stability and PBTI reliability challenges for 3D sequential integration: demonstration of a suitable gate stack for top and bottom tier nMOS
Franco, Jacopo; Witters, Liesbeth; Vandooren, Anne; Arimura, Hiroaki; Sioncke, Sonja; Putcha, Vamsi; Vais, Abhitosh; Xie, Qi; Givens, Michael; Tang, Fu; Jiang, X.; Subirats, Alexandre; Vaisman Chasin, Adrian; Ragnarsson, Lars-Ake; Kaczer, Ben; Linten, Dimitri; Collaert, Nadine (2017) -
Gate-all-around InGaAs nanowire FETs with peak transconductance of 2200 μS/μm at 50nm Lg using a replacement fin RMG flow
Waldron, Niamh; Sioncke, Sonja; Franco, Jacopo; Nyns, Laura; Vais, Abhitosh; Zhou, Daisy; Lin, Dennis; Boccardi, Guillaume; Sebaai, Farid; Xie, Qi; Givens, M.; Tang, F.; Jiang, X.; Chiu, Eddie; Opdebeeck, Ann; Merckling, Clement; Maes, Jan; van Dorp, Dennis; Teugels, Lieve; Sibaja-Hernandez, Arturo; De Meyer, Kristin; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2015) -
III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance
Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Baryshnikova, Marina; Mannaert, Geert; Alcotte, Reynald; Boccardi, Guillaume; Wambacq, Piet; Parvais, Bertrand; Langer, Robert; Kunert, Bernardette; Collaert, Nadine (2022) -
III-V on a Si platform for the next generations of communication systems
Parvais, Bertrand; Vais, Abhitosh; Yadav, Sachin; Mols, Yves; Vermeersch, Bjorn; Vondkar Kodandarama, Komal; Boccardi, Guillaume; Kunert, Bernardette; Collaert, Nadine (2022)