Browsing Conference contributions by author "Kaczer, Ben"

0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

Menou, Nicolas; Wang, Xin Peng; Kaczer, Ben; Polspoel, Wouter; Popovici, Mihaela Ioana; Opsomer, Karl; Pawlak, Malgorzata; Knaepen, W.; Detavernier, C.; Blomberg, T.; Pierreux, D.; Swerts, Johan; Maes, Jan; Favia, Paola; Bender, Hugo; Brijs, Bert; Vandervorst, Wilfried; Van Elshocht, Sven; Wouters, Dirk; Biesemans, Serge; Kittl, Jorge (2008)

45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

Henson, Kirklen; Lander, Rob; Demand, Marc; Dachs, Charles; Kaczer, Ben; Deweerd, Wim; Schram, Tom; Tokei, Zsolt; Hooker, Jacob; Cubaynes, Florence; Beckx, Stephan; Boullart, Werner; Coenegrachts, Bart; Vertommen, Johan; Richard, Olivier; Bender, Hugo; Vandervorst, Wilfried; Kaiser, M.; Everaert, Jean-Luc; Jurczak, Gosia; Biesemans, Serge (2004)

6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT

Franco, Jacopo; Kaczer, Ben; Eneman, Geert; Mitard, Jerome; Stesmans, Andre; Afanasiev, Valeri; Kauerauf, Thomas; Roussel, Philippe; Toledano-Luque, Maria; Cho, Moon Ju; Degraeve, Robin; Grasser, Tibor; Ragnarsson, Lars-Ake; Witters, Liesbeth; Tseng, Joshua; Takeoka, Shinji; Wang, Wei-E; Hoffmann, Thomas Y.; Groeseneken, Guido (2010)

A BSIM-Based Predictive Hot-Carrier Aging Compact Model

Xiang, Yang; Tyaginov, Stanislav; Vandemaele, Michiel; Wu, Zhicheng; Franco, Jacopo; Bury, Erik; Truijen, Brecht; Parvais, Bertrand; Linten, Dimitri; Kaczer, Ben (2021)

A Compact Physics Analytical Model for Hot-Carrier Degradation

Tyaginov, Stanislav; Grill, Alexander; Vandemaele, Michiel; Grasser, Tibor; Hellings, Geert; Makarov, Alexander; Jech, Markus; Linten, Dimitri; Kaczer, Ben (2020)

A Comprehensive Cryogenic CMOS Variability and Reliability Assessment using Transistor Arrays

Grill, Alexander; Michl, J.; Diaz Fortuny, Javier; Beckers, Arnout; Bury, Erik; Vaisman Chasin, Adrian; Grasser, T.; Waltl, M.; Kaczer, Ben; De Greve, Kristiaan (2023)

A comprehensive model for correlated drain and gate current fluctuations

Goes, Wolfgang; Toledano Luque, Maria; Baumgartner, O.; Schanovsky, Frank; Kaczer, Ben; Grasser, Tibor (2013)

A comprehensive variability study of doped HfO2 FeFET for memory applications

Ronchi, Nicolo; Ragnarsson, Lars-Ake; Celano, Umberto; Kaczer, Ben; Kaczmarek, Jakub; Banerjee, Kaustuv; McMitchell, Sean; Van den Bosch, Geert; Van Houdt, Jan (2022)

A disorder-controlled-kinetics model for Negative Bias Temperature Instability and its experimental verification

Kaczer, Ben; Arkhipov, Vladimir; Degraeve, Robin; Collaert, Nadine; Groeseneken, Guido; Goodwin, Michael (2005-04)

A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer NMOSFETs

Sharma, P.; Tyaginov, S.; Rauch, S.E.; Franco, Jacopo; Kaczer, Ben; Makarov, A.; Vexler, M.I.; Grasser, T. (2016)

A ferroelectric capacitor model accounting for the switching kinetics and polarization relaxation

Bartic, Andrei; Kaczer, Ben; Wouters, Dirk; Maes, Herman (2001)

A fully-integrated method for RTN parameter extraction

Simicic, Marko; Morrison, Sebastien; Parvais, Bertrand; Weckx, Pieter; Kaczer, Ben; Sawada, Ken; Ammo, Hiroaki; Yamakawa, Shinya; Nomoto, Kazuki; Ono, Makoto; Linten, Dimitri; Verkest, Diederik; Wambacq, Piet; Groeseneken, Guido; Gielen, Georges (2017)