Browsing Articles by imec author "7fc350ae16ba52b9a20f64b6400bab00d8ad50d6"
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A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap
Kondoh, Eiichi; Conard, Thierry; Brijs, Bert; Jin, S.; Bender, Hugo; de Potter de ten Broeck, Muriel; Maex, Karen (1999) -
Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
Kim, Young-Chang; Baklanov, Mikhaïl; Conard, Thierry; de Potter de ten Broeck, Muriel; Vanhaelemeersch, Serge (1999) -
Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies
Lauwers, A.; Besser, Paul; Gutt, T.; Satta, Alessandra; de Potter de ten Broeck, Muriel; Lindsay, Richard; Roelandts, Nico; Loosen, Fred; Jin, S.; Bender, Hugo; Stucchi, Michele; Vrancken, Evi; Deweerdt, Bruno; Maex, Karen (2000) -
Dose enhancement due to interconnects in deep-submicron MOSFETs exposed to X-rays
Griffoni, Alessio; Silvestri, Marco; Gerardin, Simone; Meneghesso, Gaudenzio; Paccagnella, Alessandro; Kaczer, Ben; de Potter de ten Broeck, Muriel; Verbeeck, Rita; Nackaerts, Axel (2009) -
Effect of implant oxide on ultra-shallow junction formation
Lindsay, Richard; Lauwers, Anne; Fruehauf, Jens; de Potter de ten Broeck, Muriel; Maex, Karen (2002) -
Effect of implantation oxide on the Ti- and Co-silicidation of narrow diffusion and poly-lines
Lauwers, Anne; Naem, Abdalla; de Potter de ten Broeck, Muriel; Maex, Karen (1998) -
Epitaxial diamond-hexagonal silicon nano-ribbon growth on (001) silicon
Qiu, Yang; Bender, Hugo; Richard, Olivier; Kim, Min-Soo; Van Besien, Els; Vos, Ingrid; de Potter de ten Broeck, Muriel; Mocuta, Dan; Vandervorst, Wilfried (2015) -
Gate-source-drain architecture impact on DC and performance of sub-100-nm elevated source/drain NMOS transistors
Jeamsaksiri, Wutthinan; Jurczak, Gosia; Grau, Lluis; Linten, Dimitri; Augendre, Emmanuel; de Potter de ten Broeck, Muriel; Rooyackers, Rita; Wambacq, Piet; Badenes, Gonçal (2003) -
Low temperature spike anneal for Ni-Silicide formation
Lauwers, Anne; Kittl, Jorge; Van Dal, Mark; Chamirian, Oxana; Lindsay, Richard; de Potter de ten Broeck, Muriel; Demeurisse, Caroline; Vrancken, Christa; Maex, Karen (2004-11) -
Materials aspects, electrical performance, and scalability of Ni-silicide towards sub-0.13μm technologies
Lauwers, A.; Steegen, An; de Potter de ten Broeck, Muriel; Lindsay, Richard; Satta, Alessandra; Bender, Hugo; Maex, Karen (2001) -
Ni fully silicided gates for 45 nm CMOS applications
Kittl, Jorge; Lauwers, Anne; Kmieciak, Malgorzata; Van Dal, Mark; Veloso, Anabela; Kottantharayil, Anil; Pourtois, Geoffrey; Demeurisse, Caroline; Schram, Tom; Brijs, Bert; de Potter de ten Broeck, Muriel; Vrancken, Christa; Maex, Karen (2005-08) -
Ni- and Co-based silicides for advanced CMOS applications
Kittl, Jorge; Lauwers, Anne; Chamirian, Oxana; Van Dal, Mark; Akheyar, Amal; de Potter de ten Broeck, Muriel; Lindsay, Richard; Maex, Karen (2003) -
Ni-based silicides for 45 nm CMOS and beyond
Lauwers, Anne; Kittl, Jorge; Van Dal, Mark; Chamirian, Oxana; Kmieciak, Malgorzata; de Potter de ten Broeck, Muriel; Lindsay, Richard; Raymakers, Toon; Pagès, Xavier; Mebarki, Bencherki; Mandrekar, Tushar; Maex, Karen (2004) -
Optimization of HfSiON using a design of experiment (DOE) approach
Rothschild, Aude; Mitsuhashi, Riichirou; Kerner, Christoph; Shi, Xiaoping; Everaert, Jean-Luc; Date, Lucien; Conard, Thierry; Richard, Olivier; Vrancken, Evi; Verbeeck, Rita; Veloso, Anabela; Lauwers, Anne; de Potter de ten Broeck, Muriel; Debusschere, Ingrid; Jurczak, Gosia; Niwa, Masaaki; Absil, Philippe; Biesemans, Serge (2007) -
Optimization of low-temperature silicon nitride processes for improvement of device performance
Sleeckx, Erik; Schaekers, Marc; Shi, Xiaoping; Kunnen, Eddy; Degroote, Bart; Jurczak, Gosia; de Potter de ten Broeck, Muriel; Augendre, Emmanuel (2005) -
Optimized thermal processing for Ti-Capped CoSi2 for 0.13 μm technology
Lindsay, Richard; Lauwers, A.; de Potter de ten Broeck, Muriel; Roelandts, Nico; Vrancken, Christa; Maex, Karen (2001) -
Quantitative prediction of junction leakage in bulk-technology CMOS devices
Duffy, R.; Heringa, A.; Venezia, V.C.; Loo, Josine; Verheijen, M.A.; Hopstaken, M.J.P.; van der Tak, K.; de Potter de ten Broeck, Muriel; Hooker, J.C.; Meunier-Beillard, P.; Delhougne, R. (2010) -
Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability
Chamirian, Oxana; Lauwers, Anne; Kittl, Jorge; Van Dal, Mark; de Potter de ten Broeck, Muriel; Lindsay, Richard; Maex, Karen (2004-11) -
Self-aligned CoSi2 for 0.18mm and below
Maex, Karen; Lauwers, A.; Besser, Paul; Kondoh, Eiichi; de Potter de ten Broeck, Muriel; Steegen, An (1999) -
Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide
Lauwers, Anne; de Potter de ten Broeck, Muriel; Chamirian, Oxana; Lindsay, Richard; Demeurisse, Caroline; Vrancken, Christa; Maex, Karen (2002)