Browsing Articles by imec author "e632831b6ad7576998b3cf24720d40acca7a111e"
Now showing items 1-13 of 13
-
Chemical mechanical planarization of patterned InP in shallow trench isolation (STI) template structures using hydrogen peroxide-based silica slurries containing oxalic acid or citric acid
Matovu, John B.; Ong, Patrick; Teugels, Lieve; Leunissen, Peter; Babu, S. V. (2014) -
Chemical mechanical polishing of Ge using colloidal silica particles and H2O2
Ong, Patrick; Peddeti, Shivaji; Leunissen, Peter; Babu, S. V. (2011) -
Chemical mechanical polishing of InP
Ong, Patrick; Peddeti, Shivaji; Leunissen, Peter; Babu, S.V. (2012) -
Electrical characteristics of P-type bulk Si fin field-effect transistor using solid-source doping with 1-nm phosphosilicate glass
Kikuchi, Yoshiaki; Chiarella, Thomas; De Roest, David; Blanquart, Timothee; De Keersgieter, An; Kenis, Karine; Peter, Antony; Ong, Patrick; Van Besien, Els; Tao, Zheng; Kim, Min-Soo; Kubicek, Stefan; Chew, Soon Aik; Schram, Tom; Demuynck, Steven; Mocuta, Anda; Mocuta, Dan; Horiguchi, Naoto (2016) -
Fabrication of high qualtiy Ge virtual substrates by selective epitaxial growth in shallow trench isolated Si (001) trenches
Wang, Gang; Loo, Roger; Takeuchi, Shotaro; Souriau, Laurent; Lin, Vic; Moussa, Alain; Bender, Hugo; De Jaeger, Brice; Ong, Patrick; Lee, Willie; Meuris, Marc; Caymax, Matty; Vandervorst, Wilfried; Blanpain, Bart; Heyns, Marc (2010) -
Fundamental investigation of chemical mechanical polishing of GaAs in ailica dispersions: Material removal and arsenic trihydride formation pathways
Ong, Patrick; Matovu, J.B.; Leunissen, Peter; Krishnan, Sitaraman; Babu, S.V. (2013) -
InGaAs gate-all-around nanowire devices on 300mm substrates
Waldron, Niamh; Merckling, Clement; Teugels, Lieve; Ong, Patrick; Ibrahim, Ansar; Sebaai, Farid; Pourghaderi, Mohammad Ali; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2014) -
Inspection, characterization and classification of defects for improved CMP of III-V materials
Bhonsle, Rithu; Teugels, Lieve; Usman Ibrahim, Ansar; Ong, Patrick; Delande, Tinne; Krishnan, S; Siebert, Max; Struyf, Herbert; Leunissen, Leonardus (2015) -
Optimized post-CMP and pre-Epi cleans to enable smooth and high quality epitaxial strained Ge growth on SiGe strain relaxed buffers
Loo, Roger; Souriau, Laurent; Ong, Patrick; Kenis, Karine; Rip, Jens (2012) -
Replacement fin processing for III-V on Si: From FinFets to nanowires
Waldron, Niamh; Merckling, Clement; Teugels, Lieve; Ong, Patrick; Sebaai, Farid; Barla, Kathy; Collaert, Nadine; Thean, Aaron (2016) -
Smooth and high quality epitaxial strained Ge grown on siGe strain relaxed buffers with 70-80% Ge
Loo, Roger; Souriau, Laurent; Ong, Patrick; Kenis, Karine; Rip, Jens; Peter, Storck; Buschhardt, Thomas; Vorderwestner, Martin (2011) -
The improvement of subthreshold slope and trans-conductance of P-type bulk Si field-effect-transistors by solid-source doping
Kikuchi, Yoshiaki; Chiarella, Thomas; De Roest, David; Kenis, Karine; Ong, Patrick; Horiguchi, Naoto (2017) -
Use of multifunctional carboxylic acids and hydrogen peroxide to improve surface quality and minimize phosphine evolution during chemical mechanical polishing of indium phosphide surfaces
Matovu, John Bogere; Ong, Patrick; Krishnan, Sitaraman; Babu, S.V.; Leunissen, Peter (2013)