Browsing Articles by imec author "df5489fddcf1483b5d3723d69fd7de11fc8ff7f0"
Now showing items 21-40 of 223
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An analysis of the NBTI-induced threshold voltage shift evaluated by different techniques
Ji, Zhigang; Zhang, Jian Fu; Chang, Mo Huai; Kaczer, Ben; Groeseneken, Guido (2009-05) -
An investigation on border traps in III-V MOSFETs with an In0.53Ga0.47As channel
Ji, Zhigang; Zhang, Xiong; Franco, Jacopo; Gao, Rui; Duan, Meng; Zhang, Jian Fu; Zhang, Wei Dong; Kaczer, Ben; Alian, AliReza; Linten, Dimitri; Zhou, Daisy; Collaert, Nadine; De Gendt, Stefan; Groeseneken, Guido (2015) -
Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study
Kaczer, Ben; Degraeve, Robin; Rasras, Mahmoud; De Keersgieter, An; Van de Mieroop, Koen; Groeseneken, Guido (2002) -
Analysis of the features of hot-carrier degradation in FinFETs
Makarov, Alexander; Tyaginov, Stanislav; Kaczer, Ben; Jech, Markus; Vaisman Chasin, Adrian; Grill, Alexander; Hellings, Geert; Vexler, Mikhail; Linten, Dimitri; Grasser, Tibor (2018-10) -
Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition
Vici, Andrea; Degraeve, Robin; Franco, Jacopo; Kaczer, Ben; Roussel, Philippe; De Wolf, Ingrid (2023) -
Analytical model for anomalous positive bias temperature instability in La-based HfO2 nFETs based on independent characterization of charging components
Toledano Luque, Maria; Kaczer, Ben; Aoulaiche, Marc; Spessot, Alessio; Roussel, Philippe; Ritzenthaler, Romain; Schram, Tom; Thean, Aaron; Groeseneken, Guido (2013) -
Analytical percolation model for predicting anomalous charge loss in flash memories
Degraeve, Robin; Schuler, Franz; Kaczer, Ben; Lorenzini, Martino; Wellekens, Dirk; Hendrickx, Paul; Van Duuren, Michiel; Dormans, G.J.M.; Van Houdt, Jan; Haspeslagh, Luc; Groeseneken, Guido; Tempel, Georg (2004) -
Applicability of charge pumping on Germanium MOSFETs
Martens, Koen; Kaczer, Ben; Grasser, Tibor; De Jaeger, Brice; Meuris, Marc; Maes, Herman; Groeseneken, Guido (2008) -
Bi-modal variability of nFinFET characteristics during hot-carrier stress: a modeling approach
Makarov, Alexander; Kaczer, Ben; Vaisman Chasin, Adrian; Vandemaele, Michiel; Grill, Alexander; Hellings, Geert; El-Sayed, Al-Moatasem; Grasser, Tibor; Linten, Dimitri; Tyaginov, Stanislav (2019) -
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
Franco, Jacopo; Kaczer, Ben; Vais, Abhitosh; Alian, AliReza; Arimura, Hiroaki; Putcha, Vamsi; Sioncke, Sonja; Waldron, Niamh; Zhou, Daisy; Nyns, Laura; Mitard, Jerome; Heyns, Marc; Groeseneken, Guido; Collaert, Nadine; Linten, Dimitri; Thean, Aaron (2016) -
Bistable defects as the cause for NBTI and RTN
Goes, Wolfgang; Schanovsky, Franz; Reisinger, Hans; Kaczer, Ben; Grasser, Tibor (2011-08) -
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic
Franco, Jacopo; Graziano, Salvatore; Kaczer, Ben; Crupi, Felice; Ragnarsson, Lars-Ake; Grasser, Tibor; Groeseneken, Guido (2012) -
Buried silicon-germanium pMOSFETs: experimental analysis in VLSI logic circuits under aggressive voltage scaling
Crupi, Felice; Alioto, Massimo; Franco, Jacopo; Magnone, Paolo; Kaczer, Ben; Groeseneken, Guido; Mitard, Jerome; Witters, Liesbeth; Hoffmann, Thomas Y. (2012) -
Channel hot carrier degradation mechanism in long/short channel n-FinFETs
Cho, Moon Ju; Roussel, Philippe; Kaczer, Ben; Degraeve, Robin; Franco, Jacopo; Aoulaiche, Marc; Chiarella, Thomas; Kauerauf, Thomas; Horiguchi, Naoto; Groeseneken, Guido (2013) -
Characterization of electron traps in Si-capped Ge MOSFETs with HfO2/SiO2 gate stack
Benbakhti, B.; Zhang, J.F.; Li, Z.; Zhang, W; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2012) -
Characterization of negative-bias temperature instability of Ge MOSFETs with GeO2/Al2O3 stack
Ma, J.; Zhang, J.F.; Ji, Zhigang; Benbakhti, Brahim; Zhang, Wei Dong; Zheng, Xue Feng; Mitard, Jerome; Kaczer, Ben; Groeseneken, Guido; Hall, S.; Robertson, J.; Chalker, P. (2014) -
Charge trapping in metal-ferroelectric-insulator-semiconductor structure with SrBi2Ta2O9/Al2O3/SiO2 stack
Xu, Zhen; Kaczer, Ben; Johnson, Jo; Wouters, Dirk; Groeseneken, Guido (2004-08) -
Charge trapping in MOSFETs with HfSiON dielectrics during electrical stressing
O'Connor, Robert; Hughes, Greg; Degraeve, Robin; Kaczer, Ben (2005) -
Circuit design-oriented stochastic piecewise modeling of the postbreakdown gate current in MOSFETs: application to ring oscilators
Martin-Martinez, Javier; Kaczer, Ben; Degraeve, Robin; Roussel, Philippe; Rodriguez, Rosana; Nafria, Monserrat; Aymerich, X.; Dierickx, Bart; Groeseneken, Guido (2012) -
Circuit simulation of workload-dependent RTN and BTI based on trap kinetics
Camargo, V. V. A.; Kaczer, Ben; Grasser, T.; Wirth, G. (2014)