Browsing Presentations by author "Caymax, Matty"
Now showing items 21-40 of 99
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Effects on the HE implantation energy on the strain relaxation of epitaxial Si0.8Ge0.2/Si(100) heterostructures
Morschbacher, Mario; da Silva, Douglas; Fichtner, Paulo; Zawislak, Fernando; Hollaender, Bernd; Luysberg, Martina; Mantl, Siegfried; Caymax, Matty; Loo, Roger (2004) -
Electrical evaluation of the EPI/substrate interface quality after different in-situ and ex-situ low-temperature pre-epi cleaning methods
Caymax, Matty; Decoutere, Stefaan; Röhr, Erika; Vandervorst, Wilfried; Heyns, Marc; Sprey, Hessel; Storm, Arjen; Maes, J.W. (1998) -
Epitaxial erbium silicide contact to silicon-germanium
Horvath, Z.; Molnart, G.; Peto, G.; Deszi, I.; Loo, Roger; Caymax, Matty; Z'd'ansky, K. (2003) -
Epitaxial growth on germanium: kinetics and layer quality
Bonzom, Renaud; Leys, Frederik; Loo, Roger; Caymax, Matty; Vandervorst, Wilfried (2005) -
Epitaxial Si, SiGe and Ge for high-performance devices
Loo, Roger; Hikavyy, Andriy; Vincent, Benjamin; Wang, Gang; Vanherle, Wendy; Gencarelli, Federica; Nguyen, Duy; Rosseel, Erik; Souriau, Laurent; Rondas, Dirk; Dekoster, Johan; Caymax, Matty (2010) -
European efforts to develop III-Vs on 200 and 300 mm Silicon
Caymax, Matty (2012) -
Fabrication of virtual Ge and Ge-rich SiGe substrates using selective or non-selective epitaxial growth
Loo, Roger; Wang, Gang; Souriau, Laurent; Hikavyy, Andriy; Takeuchi, Shotaro; Caymax, Matty (2009) -
Formation of epitaxial CoSi2 film on Si1-xGex(100) by reactive deposition epitaxy of Co1-xTix layer
Peto, G.; Molnar, G.; Kotai, E.; Dezsi, I.; Karlsteen, M.; Södervall, U.; Willander, M.; Caymax, Matty; Loo, Roger (2001) -
Formation of Ni(Ge1-ySny) layers with solid-phase reaction in Ni/Ge1-xSnx/Ge systems
Nishimura, Tsuyoshi; Shimura, Yosuke; Takeuchi, Shotaro; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Nakatsuka, Osaku; Zaima, Shigeaki (2010) -
Formation of Ni(Ge1-ySny)/Ge1-xSnx/Ge contact for Ge1-xSnx source/drain Stressor
Nishimura, T.; Nakatsuka, O.; Shimura, Y.; Takeuchi, S.; Vincent, Benjamin; Vantomme, Andre; Dekoster, Johan; Caymax, Matty; Loo, Roger; Zaima, S. (2010) -
Ge and GeSn chemical vapor deposition for Si based photonic devices
Vincent, Benjamin; Gencarelli, Federica; Vanherle, Wendy; Loo, Roger; Caymax, Matty; Van Campenhout, Joris (2011) -
Ge and III-V passivation issues
Houssa, Michel; Brammertz, Guy; Caymax, Matty; Meuris, Marc; Heyns, Marc (2007) -
Ge and III/V: the CMOS of the future
Heyns, Marc; Adelmann, Christoph; Bellenger, Florence; Brammertz, Guy; Brunco, David; Caymax, Matty; De Jaeger, Brice; Delabie, Annelies; Eneman, Geert; Houssa, Michel; Kaczer, Ben; Lin, Dennis; Martens, Koen; Meuris, Marc; Mitard, Jerome; Opsomer, Karl; Pourtois, Geoffrey; Satta, Alessandra; Scarrozza, Marco; Simoen, Eddy; Sioncke, Sonja; Souriau, Laurent; Terzieva, Valentina; Van Elshocht, Sven (2007) -
Ge chemical vapor deposition on GaAs and In0.53Ga0.47As for low resistivity ohmic III-V nMOSFETs source/drain contacts
Vincent, Benjamin; Firrincieli, Andrea; Waldron, Niamh; Wang, W.-E.; Franquet, Alexis; Douhard, Bastien; Bender, Hugo; Vandervorst, Wilfried; Loo, Roger; Caymax, Matty (2011) -
Ge low-temperature chemical vapor deposition (CVD) using Ge2H6
Gencarelli, Federica; Vincent, Benjamin; Souriau, Laurent; Loo, Roger; Caymax, Matty; Heyns, Marc (2011) -
Ge-migration in s-Si-SiGe structures during implantation and annealing
Vandervorst, Wilfried; Janssens, Tom; Geenen, Luc; Loo, Roger; Caymax, Matty; Delhougne, Romain; Pawlak, Bartek; Ravit, Claire (2005) -
Germanium and III-V for beyond-Si CMOS: channel materials and gate stacks
Caymax, Matty (2011) -
GeSn growth by CVD: challenges and opportunities
Vincent, Benjamin; Loo, Roger; Caymax, Matty; Dekoster, Johan (2010) -
GeSn: future applications and strategy
Loo, Roger; Caymax, Matty; Vincent, Benjamin; Dekoster, Johan; Takeuchi, Shotaro; Nakatsuka, Osamu; Zaima, Shigeaki; Temst, Kristiaan; Vantomme, Andre (2010)