Browsing by Author "Carbonell, Laure"
- Results Per Page
- Sort Options
Publication A novel approach to characterization of a low-k dielectric polymer surface
;Martin Hoyas, Ana ;Schuhmacher, Jorg ;Whelan, Caroline ;Baklanov, MikhaïlCarbonell, LaureOral presentation2002, Ph.D. SymposiumPublication A thermal stability study of Alkane and aromatic thiolate self-assembled monolayers on copper surfaces
Journal article2004, Superlattices and Microstructures, (36) 1_3, p.149-160Publication An investigation of ultra low-k dielectrics with high thermal stability for integration in memory devices
Journal article2007, Microelectronic Engineering, (84) 11, p.2582-2586Publication Au-free AlGaN/GaN power diode on 8 in Si substrate with gated edge termination
Journal article2013, IEEE Electron Device Letters, (34) 8, p.1035-1037Publication Barrier deposition for advanced interconnects
Proceedings paper2007, Atomic Layer Deposition Applications 2, 29/10/2006, p.131-138Publication Bulk properties of MOCVD-deposited HfO2 layers for high-k dielectric applications
Journal article2004, Journal of the Electrochemical Society, (151) 10, p.F228-F234Publication Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109
Journal article2002, Microelectronic Engineering, (64) 1_4, p.25-33Publication Characterisation of JSR's spin-on hardmask FF-02
Journal article2003, Microelectronic Engineering, (70) 2_4, p.308-313Publication Characterization of advanced semiconductor materials by thermal desorption mass spectrometry with atmospheric pressure ionization
;Carbonell, Laure; ; ; ;Van Hove, MarleenProceedings paper2003, IC Techniques for Semiconductor Materials, Devices, and Processes, 28/04/2003, p.150-159Publication CMOS 32nm technology node: business as usual for interconnect damascene patterning?
Journal article2008-12, Semiconductor Fabtech, 38, p.70-77Publication Comparison between intrinsic and integrated reliability properties of low-k materials
Meeting abstract2011, IEEE International Reliability Physics Symposium - IRPS, 10/04/2011, p.142-148Publication Continued scalability of copper/low-k interconnects
Oral presentation2005, MRS Spring Symposium B: Materials, Technology, and Reliability of Advanced InterconnectsPublication Copper grain growth in reduced dimensions
Proceedings paper2004-06, Proceedings of the IEEE International Interconnect Technology Conference - IITC, 7/06/2004, p.48-50Publication Corrosion inhibition by self-assembled monolayers for enhanced wire bonding on Cu surfaces
Journal article2003, Microelectronic Engineering, (70) 2_4, p.551-557Publication Cu resistivity scaling limits for 20 nm copper damascene lines
Proceedings paper2007, IEEE International Interconnect Technology Conference - IITC, 4/06/2007, p.49-51Publication Cu(Mn) seed layers in single damascene trenches with dimensions down to 30 nm
Proceedings paper2009, Advanced Metallization Conference 2008 (AMC 2008), 23/09/2008, p.237-242Publication Cu(Mn) seed layers in single damascene trenches with dimensions down to 30 nm
Meeting abstract2008, Advanced Metallization Conference - AMC, 23/09/2008Publication Defect inspection of Cu metallization
Oral presentation2002, KLA-Tencor Yield Management SeminarPublication Defectivity study of Cu metallization process by dark- and bright-field inspection
Proceedings paper2003, Ultra Clean Processing of Silicon Surfaces 2002 - UCPSS, 16/09/2002, p.281-287Publication Development of a new metallization scheme for making nanoscale interconnects based on plasma-functionalization and electroless deposition
Meeting abstract2013, Materials for Advanced Metallization - MAM, 11/03/2013, p.261-262