Browsing by Author "Chamirian, Oxana"
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Publication Applications of Ni-based silicides to 45 nm CMOS and beyond
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.31-42Publication Co and Ni-based silicides for sub-45nm CMOS technologies
Chamirian, OxanaPHD thesis2005-11Publication Co-silicide, Co(Ni)-silicide and Ni-silicide to source/drain contact resistance
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.197-204Publication CoSi2 formation from CoxNi1-x/Ti system
; ; ; Journal article2002, Microelectronic Engineering, (64) 1_4, p.173-180Publication Effects of alloying on properties of NiSi for CMOS applications
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and technology, 12/04/2004Publication Investigation of Ni fully silicided gates for sub-45 nm CMOS technologies
Journal article2004-08, Microelectronic Engineering, 76, p.349-353Publication Linewidth dependence of the reverse bias junction leakage for co-silicided source/drain junctions
Proceedings paper2002, Silicon Materials - Processing, Characterization, and Reliability, 1/04/2002, p.29-34Publication Low temperature spike anneal for Ni-Silicide formation
Journal article2004-11, Microelectronic Engineering, (76) 1_4, p.303-310Publication Mapping nanometre-scale temperature gradients in patterned cobalt-nickel silicide films
Journal article2002, Nanotechnology, (13) 2, p.149-152Publication Ni silicide morphology on small features
Proceedings paper2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004Publication Ni- and Co-based silicides for advanced CMOS applications
Journal article2003, Microelectronic Engineering, (70) 2_4, p.158-165Publication Ni-based silicides for 45 nm CMOS and beyond
Journal article2004, Materials Science and Engineering B, 114-115, p.29-41Publication Ni-based silicides: material issues for advanced CMOS applications
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.177-182Publication Reaction of Ni and Si0.8Ge0.2: phase formation and thermal stability
Journal article2004-11, Microelectronic Engineering, (76) 1_4, p.297-302Publication Sidewall grooving on CoSi2 narrow lines
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.155-160Publication Silicide scaling: Co, Ni or CoNi ?
Proceedings paper2003, Advanced Short-Time Thermal Processing for Si-based CMOS devices, 27/04/2003, p.167-176Publication Silicides for 65nm CMOS and beyond
Proceedings paper2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.267-278Publication Silicides for advanced CMOS devices
Proceedings paper2005, Microscopy of Semiconducting Materials. Proceedings of the 14th Conference, 11/04/2005, p.379-388Publication Silicides for sub-40nm gate length CMOS
Proceedings paper2003, Proceedings of the AVS 4th International Conference on Microelectronics and Interfaces - ICMI, 3/03/2003, p.140-143