Browsing by Author "Claeys, Cor"
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Publication 1/f low frequency fluctuations and inversion layer quantization in deep submicron metal-oxide-semiconductor field effect transistors
Meeting abstract2002, Belgische Natuurkundige Vereniging / Société Belge de Physique: General Scientific Meeting, 5/06/2002, p.CM1-12Publication 1/f noise and DLTS of LEDs
Proceedings paper1996, Proceedings 3rd ELEN Workshop, 5/11/1996, p.32-36Publication 1/f Noise in drain and gate current of MOSFETs with high-k gate stacks
Journal article2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189Publication 1/f noise study on strained Si0.8Ge0.2 p-channel MOSFETs with high-k/poly Si gate stack
Journal article2009, Solid-State Electronics, (53) 11, p.1177-1182Publication 20-MeV alpha ray effects in AlGaAsP p-HEMTs
Proceedings paper2000, Proceedings of the 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, 11/10/2000, p.133-138Publication 3D backside integration of FinFETs: Is there an impact on LF noise?
Journal article2023, SOLID-STATE ELECTRONICS, (207) September, p.Art. 108724Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; Publication A deep level study of high-temperature electron-irradiated n-type Cz silicon
; Publication A DLTS study on plasma-hydrogenated n-type high-resistivity MCz silicon
Journal article2007, Journal of Materials Science: Materials in Electronics, (18) 7, p.705-710Publication A global description of the base current 1/f noise of polysilicon emitter bipolar transistors before and after hot-carrier stress
Journal article1998, Solid-State Electronics, (42) 9, p.1679-1687Publication A Low frequency noise characterization in n-channel UTBOX devices with 6 nm Si film
Proceedings paper2013, International Conference on 1/f Noise and Fluctuations - ICNF, 24/06/2013, p.1-4Publication A low temperature technology on the base of hydrogen enhanced thermal donor formation for future high voltage applications
Proceedings paper2002, Proceedings of the 11th International Workshop on Physics of Semiconductor Devices, 11/12/2001, p.405-413Publication A low-frequency noise study of hot-carrier stressing effects in submicron Si p-MOSFETs
Journal article1998, Microelectronics Reliability, (38) 1, p.23-27Publication A low-frequency noise study of state-of-the-art silicon n+p junction diodes
Proceedings paper1995, Noise in Physical Systems and 1/f Fluctuations - ICNF. Proceedings of the 13th International Conference, 29/05/1995, p.537-540Publication A low-frequency noise study of the physical hot-carrier degradation mechanisms in lowly-doped-drain Si MOSFETs
Meeting abstract1996, Belgische natuurkundige vereniging. Algemene Wetenschappelijke Vergadering, 6/06/1996, p.CM-P-36Publication A model for MOS gate stack quality evaluation based on the gate current 1/f noise
Proceedings paper2008, 9th European Workshop on Ultimate Integration of Silicon - ULIS, 12/03/2008, p.141-144Publication A model for the radiation degradation of polycrystalline silicon films
Oral presentation2002, RADECS WorkshopPublication A new method for determining the front and back interface trap densities of accumulation mode SOI MOSFETs at 77K
Journal article1995, Solid-State Electronics, (38) 10, p.1799-1803Publication A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Proceedings paper2000, Proceedings of the 3rd IEEE International Caracas Conference on Devices, Circuits and Systems - ICCDCS, 15/03/2000, p.D45/1-1-D45/5Publication A novel approach to analyse FTIR spectra of precipitates in moderately and heavily doped silicon
; Claeys, CorJournal article2003, Physica B, 340-342, p.1013-1017