Browsing by Author "Cosnier, Vincent"
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Publication Bulk properties of MOCVD-deposited HfO2 layers for high-k dielectric applications
Journal article2004, Journal of the Electrochemical Society, (151) 10, p.F228-F234Publication Characterization of nano-laminate structure using grazing incidence XRD and ATR-FTIR
;Zhao, Chao; ; ; ;Cosnier, Vincent; Roebben, G.Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 27/04/2003, p.252-259Publication Effect of N2 annealing on AlxZryOz oxide
Oral presentation2002, AVS 49th International SymposiumPublication Effect of N2 annealing on AlZrO oxide
Journal article2003, Journal of Vacuum Science & Technology A, (21) 4, p.1482-1487Publication Growth and characterization of single and mixed metal oxides by ALCVD on various surfaces for high-k gate stack applications
Oral presentation2002, Atomic Layer Deposition Conference - ALDPublication Infrared interface analysis of high-k dielectrics deposited by atomic layer chemical vapour deposition
Proceedings paper2001, Extended Abstracts of the International Workshop on Gate Insulator - IWGI, 1/11/2001, p.226-229Publication Issues, achievements and challenges towards integration of high-k dielectrics
Proceedings paper2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?Publication Physical characterisation of high-gate stacks
Oral presentation2002, MRS Fall Meeting Symposium N: Novel Materials and Processes for Advanced CMOSPublication Physical characterization of ultrathin high k dielectrics
Proceedings paper2003, 8th International Symposium on Plasma-and Process-Induced Damage, 24/04/2003, p.40-50Publication Scaling of high-k dielectrics towards sub-1nm EOT
Proceedings paper2003, IEEE International Symposium on VLSI Technology, Systems, and Applications, 23/04/2003, p.251-254Publication Surface preparation and interfacial stability of high-k dielectrics deposited by atomic layer chemical vapor deposition
Journal article2003, Microelectronic Engineering, (65) 3, p.259-272Publication The influence of defects on campatibility and yield of the HfO2-polysilicon gate stack for CMOS integration
Proceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.335-340Publication Thermal processing of high-K materials thermodynamics and kinetics
Meeting abstract2002, 201st Meeting of the Electrochemical Society. Rapid Thermal and Other Short Time Processing Technologies III, 12/05/2002, p.715Publication Thermal stability and scalability of zr-aluminate-based high-k gate stacks
;Chen, Jerry ;Cartier, Eduard ;Carter, Richard ;Kauerauf, Thomas ;Zhao, ChaoPétry, JasmineProceedings paper2002, Symposium on VLSI Technology: Digest of Technical Papers, 11/06/2002, p.192-193