Browsing by Author "Crupi, F."
- Results Per Page
- Sort Options
Publication 1/f Noise in drain and gate current of MOSFETs with high-k gate stacks
Journal article2009, IEEE Transactions on Device and Materials Reliability, (9) 2, p.180-189Publication A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes
Journal article2003, IEEE Trans. Device and Materials Reliability, (3) 1, p.8-13Publication A model for MOS gate stack quality evaluation based on the gate current 1/f noise
Proceedings paper2008, 9th European Workshop on Ultimate Integration of Silicon - ULIS, 12/03/2008, p.141-144Publication Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures
Journal article2009, Journal of Applied Physics, (106) 7, p.73710Publication Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique
Proceedings paper2009, 2nd International Workshop on Electron Devices and Semiconductor Technology - IEDST, 1/06/2009Publication DC and low-frequency noise behavior of the conductive filament in bipolar HfO2-based resistive random access memory
Journal article2013, Microelectronic Engineering, 107, p.1-5Publication Does strain engineering impact the gate stack quality and reliability?
Proceedings paper2007, ULSI Process Integration 5, 7/10/2007, p.101-114Publication Extraction of physical parameters of alternative high-k gate stacks through comparison between measurements and quantum simulations
Proceedings paper2005-04, 6th European Conference on Ultimate Integration of Silicon - ULIS, 7/04/2005, p.35-38Publication Impact of high-mobility materials on the performance of near- and sub-threshold CMOS logic circuits
Journal article2013, IEEE Transactions on Electron Devices, (60) 3, p.972-977Publication Impact strain engineering on gate stack quality and reliability
Journal article2008, Solid-State Electronics, (52) 8, p.1115-1126Publication Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks
Journal article2007, Microelectronics Reliability, (47) 4_5, p.501-504Publication Modeling the gate current 1/f noise and its application to advanced CMOS devices
Proceedings paper2008, 9th International Conference on Solid-State and Integrated-Circuit Technology - IC-SICT, 20/10/2008, p.420-423Publication On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO2/SiO2 gate stack
Journal article2008, Applied Physics Letters, (92) 16, p.163508Publication On the defect generation and low voltage extrapolation of QBD in SiO2/HfO2 stacks
Proceedings paper2004, Technical Digest VLSI Technology Symposium, 15/06/2004, p.140-141Publication Performance and reliability of strained-silicon nMOSFETs with SiN cap layer
Journal article2007, IEEE Trans. Electron Devices, (54) 1, p.78-82Publication pMOSFET off-state leakage and junction leakage current in Ge-based devices
Proceedings paper2009, International Semiconductor Technology Conference - ISTC/CSTIC, 19/03/2009, p.61-66Publication The role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacks
Proceedings paper2009, Silicon Nitride, Silicon Dioxide, and Alternate Emerging Dielectrics 10, 24/05/2009, p.87-99Publication The role of the interfaces in the 1/f noise of MOSFETs with high-k gate stacks
Meeting abstract2009, 215th ECS Meeting, 24/05/2009