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Browsing by Author "Cubaynes, Florence"

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    45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

    Henson, Kirklen
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    Lander, Rob
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    Demand, Marc  
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    Dachs, Charles
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    Kaczer, Ben  
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    Deweerd, Wim
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    Schram, Tom  
    Proceedings paper
    2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.851-854
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    A manufacturable 25nm planar MOSFET technology

    Ponomarev, Youri
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    Loo, Josine
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    Dachs, Charles
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    Cubaynes, Florence
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    Verheijen, M. A.
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    Kaiser, M.
    Proceedings paper
    2001, Symposium on VLSI Technology Digest of Technical Papers;, p.33-34
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    A practical baseline process for advanced CMOS devices research

    Ponomarev, Youri
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    Loo, Josine
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    Rittersma, Chris
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    Lander, Rob
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    Hooker, Jacob
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    Doornbos, Gerben  
    Proceedings paper
    2003, Proceedings 33rd European Solid-State Device Research Conference - ESSDERC, 16/09/2003, p.27-30
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    Advanced PMOS device architecture for highly-doped ultra-shallow junctions

    Surdeanu, Radu
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    Pawlak, Bartek  
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    Lindsay, Richard
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    Van Dal, Mark  
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    Doornbos, Gerben  
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    Dachs, C.J.J.
    Journal article
    2004, Japanese J. of Appl. Phys. Part 1, (43) 4B, p.1778-1783
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    Device and circuit-level analog performance trade-offs: a comparative study of planar bulk FETs versus FinFETs

    Subramanian, Vaidy
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    Parvais, Bertrand  
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    Borremans, Jonathan
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    Mercha, Abdelkarim  
    Proceedings paper
    2005, Technical Digest International Electronic Devices Meeting - IEDM, 5/12/2005, p.36-5-1-36-5-4
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    Further optimization of plasma nitridation of ultra-thin oxides for 65 nm node MOSFETS

    Kraus, Philip
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    Chua, Tai Chen
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    Rothschild, Aude
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    Cubaynes, Florence
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    Veloso, Anabela  
    Proceedings paper
    2004, Advanced Short-Time Thermal Processing for Si-based CMOS Devies II, 9/05/2004, p.236-243
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    Gate dielectrics for high performance and low power CMOS SoC applications

    Cubaynes, Florence
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    Dachs, Charles
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    Detcheverry, Celine
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    Zegers, A.
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    Venezia, Vincent
    Proceedings paper
    2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.427-430
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    In-line electrical characterization of furnace and plasma and plasma nitrided gate dielectric films

    Eason, K.
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    Passefort, Sophie
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    Zhang, X.
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    Cubaynes, Florence
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    Schaekers, Marc  
    Oral presentation
    2002, 5th Technical and Scientific Meeting of CREMSI: New Tools and Processes for Thin Active Layers in the Advanced FEOL Techniques
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    Optimal frequency range selection for full C-V characterization above 45MHz for ultra thin (1.2-nm) nitrided oxide MOSFETs

    Jeamsaksiri, Wutthinan
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    Mercha, Abdelkarim  
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    Ramos, Javier
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    Decoutere, Stefaan  
    Proceedings paper
    2004, Proceedings of the International Conference on Microelectronic Test Structures - ICMTS, 22/03/2004, p.297-301
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    Physical properties of thin nitrided Hf silicates and their impact on the performance of advanced transistors having a TaN metal gate electrode

    Cubaynes, Florence
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    van der marel, C.
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    Hopstaken, M.J.P.
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    Van Elshocht, Sven  
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    Everaert, Jean-Luc
    Oral presentation
    2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors
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    Plasma nitridation optimization sub-15A gate dielectrics

    Cubaynes, Florence
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    Schmitz, Jurriaan
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    van der marel, C.
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    Snijders, H.
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    Veloso, Anabela  
    Proceedings paper
    2003, Silicon Nitride and Silicon Dioxide Thin Insulating Films VII, 28/04/2003, p.595-604
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    Plasma nitrided silicon rich oxide as an extension to ultra-thin nitrided oxide gate dielectrics

    Cubaynes, Florence
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    Venezia, V.
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    Everaert, Jean-Luc
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    Shi, Xiaoping
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    Rothschild, Aude
    Proceedings paper
    2004, 13th Workshop on Dielectrics in Microelectronics - WODIM, 28/06/2004
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    RFCV test structures for a selected frequency range

    Jeamsaksiri, Wutthinan
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    Mercha, Abdelkarim  
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    Ramos, Javier
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    Decoutere, Stefaan  
    Journal article
    2005, IEICE Transactions on Electronics, (88) 5, p.817-823
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    RPN oxynitride gate dielectrics for 90nm low power CMOS applications

    Veloso, Anabela  
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    Jurczak, Gosia  
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    Cubaynes, Florence
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    Rooyackers, Rita
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    Mertens, Sofie  
    Proceedings paper
    2002, ESSDERC - 32nd European Solid-State Device Research Conference, 24/09/2002, p.159-162
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    Study of pulsed RF DPN process parameters for 65 nm node MOSFET gate dielectrics

    Rothschild, Aude
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    Kraus, P.A.
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    Chua, T.C.
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    Nouri, F.
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    Cubaynes, Florence
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    Veloso, Anabela  
    Proceedings paper
    2004, Integration of Advanced Micro- and Nanoelectronic Devices - Critical Issues and Solutions, 10/04/2004, p.49-53
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    Tantalum-based gate electrode metals for advanced CMOS devices

    Hooker, Jacob
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    Lander, Rob
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    Cubaynes, Florence
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    Schram, Tom  
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    Roozeboom, F.
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    van Zijl, J.
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    Maas, M.
    Proceedings paper
    2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.215-224
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    Ultra thin plasma nitrided oxides for sub-100nm CMOS

    Rothschild, Aude
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    Veloso, Anabela  
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    Mertens, Sofie  
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    Schaekers, Marc  
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    Cubaynes, Florence
    Oral presentation
    2002, 5th Technical and Scientific Meeting of CREMSI: New Tools and Processes for Thin Active Layers in the Advanced FEOL Techniques
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    Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications

    Veloso, Anabela  
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    Cubaynes, Florence
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    Rothschild, Aude
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    Mertens, Sofie  
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    Degraeve, Robin  
    Proceedings paper
    2003, 33rd European Solid-State Devices Research Conference - ESSDERC, 16/09/2003

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