Browsing by Author "De Gendt, Stefan"
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Publication 2D material integration in the semiconductor industry: Challenges and Solutions
Meeting abstract2019, Graphene week 2019, 23/09/2019Publication 2D MoS2 film thickness impact on the efficiency of surface-doped devices
Meeting abstract2017, 48th IEEE Semiconductor Interface Specialists Conference - SISC, 6/12/2017, p.2.5Publication 2D TMDC aging: a case study of monolayer WS2 and mitigation strategies
Journal article2024, NANOTECHNOLOGY, (35) 47, p.Art. 475702Publication 45nm LSTP FET with FUSI gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
Journal article2005, Microelectronic Engineering, 80, p.7-10Publication A 35nm diameter vertical silicon nanowire short-gate tunnelFET
Proceedings paper2009, Nanotechnology Workshop, 13/06/2009Publication A chemisorbed interfacial layer for seeding atomic layer deposition on graphite
Journal article2021, NANOSCALE, (13) 28, p.12327-12341Publication A CMOS compatible carbon nanotube growth approach
Meeting abstract2010, MRS Fall Meeting Symposium C: Fundamentals of Low-Dimensional Carbon Nanomaterials, 29/11/2010, p.C4.11Publication A comparative X-ray photoelectron spectroscopy and medium-energy ion-scattering study of ultra-thin, Hf-based high-k films
Journal article2010-03, Surface and Interface Analysis, (2010) 42, p.1057-1060Publication A comprehensive model for breakdown mechanism in HfO2 high-k gate stacks
Proceedings paper2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.725-728Publication A controlled deposition of organic contamination and the removal with ozone based cleaning
Proceedings paper2001, Ultra Clean Processing of Silicon Surfaces 2000: Proceedings of the 5th International Conference - UCPSS, 18/09/2000, p.223-226Publication A detailed study on the growth of thin oxide layers on silicon using ozonated solutions
Journal article2000, Journal of the Electrochemical Society, (147) 3, p.1124-1129Publication A Dy2O3-capped HfO2 dielectric and TaCx-based metals enabling low-Vt single-metal-single-dielectric gate stack
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.535-538Publication A Ge matrix removal method for metallic contamination analysis on Ge wafers using TXRF
Oral presentation2004, European Conference on X-Ray SpectrometryPublication A large scale systematic study of graphene/metal contact resistance using cTLM
Meeting abstract2014, Graphene Poster Book, 6/05/2014, p.127Publication A mechanism for the silicon oxide growth by ozonated solutions
Proceedings paper2000, Cleaning Technology in Semiconductor Device Manufacturing. Proceedings of the 6th International Symposium, 17/10/1999, p.407-415Publication A mechanism for the silicon oxide growth by ozonated solutions
Meeting abstract1999, Electrochemical Society Fall Meeting: 6th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 17/10/1999, p.1117Publication A nanoanalytical investigation of elemental distributions in high-k dielectric gate stacks on silicon
Journal article2008-01, Microelectronic Engineering, (85) 1, p.61-64Publication A new breakdown failure mechanism in HfO2 gate dielectrics
; Publication A new method to calculate leakage current and its applications for sub-45nm MOSFETs
Proceedings paper2005, Proceedings of the 35th European Solid-State Device Research Conference - ESSDERC, 12/09/2005, p.489-492Publication A novel low temperature etch approach to reduce ULK plasma damage
Meeting abstract2015, Plasma Etch and Strip in Microtechnology - PESM, 27/04/2015