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Browsing by Author "Defranoux, C."

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    Accurate electrical activation characterization of CMOS ultra-shallow profiles

    Clarysse, Trudo
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    Dortu, Fabian
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    Vanhaeren, Danielle  
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    Hoflijk, Ilse  
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    Geenen, Luc
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    Janssens, Tom
    Journal article
    2004, Materials Science and Engineering B, 114-115, p.166-173
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    Characterization of high-k dielectrics by combined spectroscopic ellipsometry (SE) and x-ray reflectometry (XRR)

    Sun, L.
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    Defranoux, C.
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    Stehlé, J.L.
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    Boher, P.
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    Evrard, P.
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    Bellandi, E.
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    Bender, Hugo  
    Proceedings paper
    2004, Fundamentals of Novel Oxide/Semiconductor Interfaces, 1/12/2003, p.95-101
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    High-k dielectric characterization by combined VUV spectroscopic ellipsometry and X-ray reflectometry

    Boher, P.
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    Evrard, P.
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    Defranoux, C.
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    Darragon, A.
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    Sun, Lianchao
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    Fouere, J.C.
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    Stehlé, J.L.
    Proceedings paper
    2003-12, MRS Fall Meeting Symposium E: Fundamentals of Novel Oxide/Semiconductor Interfaces, 1/12/2003
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    High-k dielectric characterization by VUV spectroscopic ellipsometry and X-ray reflection

    Boher, P.
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    Evrard, P.
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    Defranoux, C.
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    Fouere, J.C.
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    Bellandi, E.
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    Bender, Hugo  
    Proceedings paper
    2003, Characterization and Metrology of ULSI Technology, 24/03/2003, p.148-153
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    Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition

    Houssiau, L.
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    Vitchev, R.G.
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    Pireaux, J.J.
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    Conard, Thierry  
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    Bender, Hugo  
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    Richard, Olivier  
    Proceedings paper
    2003, AVS 4th International Conference on Microelectronics and Interfaces - ICMI, 3/03/2003, p.36-38
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    On the activation mechanisms of sub-melt laser anneals

    Clarysse, Trudo
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    Bogdanowicz, Janusz  
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    Goossens, Jozefien
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    Moussa, Alain  
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    Rosseel, Erik  
    Meeting abstract
    2008, E-MRS Sprng Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008
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    Physical characterization of mixed HfAlOx layers by complementary analysis techniques

    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
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    Brijs, Bert
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    Petry, Jasmine
    Journal article
    2004, Materials Science and Engineering B, 109, p.60-63
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    Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques

    Bender, Hugo  
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    Conard, Thierry  
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    Richard, Olivier  
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    Brijs, Bert
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    Petry, Jasmine
    Proceedings paper
    2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.223-232
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    Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics

    Boher, P.
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    Defranoux, C.
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    Bourtault, S.
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    Piel, J.P.
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    Bender, Hugo  
    Proceedings paper
    2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, 27/04/2003, p.305-315
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    Vacuum UV spectroscopic ellipsometry applied to the characterization of high-k dielectrics

    Boher, P.
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    Defranoux, C.
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    Heinrich, P.
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    Wolstenholme, J.
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    Bender, Hugo  
    Oral presentation
    2003, E-MRS Spring Meeting Symposium I: Functional Metal Oxides - Semiconductor Structures
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    Vacuum UV spectroscopic ellipsometry applied to the characterization of high-k gate dielectrics

    Boher, P.
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    Defranoux, C.
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    Bender, Hugo  
    Oral presentation
    2003, 3rd International Conference on Spectroscopic Ellipsometry - ICSE 3
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    VUV spectroscopic ellipsometry applied to the characterization of high-k dielectrics

    Boher, P.
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    Defranoux, C.
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    Heinrich, P.
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    Wolstenholme, J.
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    Bender, Hugo  
    Journal article
    2004, Materials Science & Engineering B, (109) 1_3, p.64-68
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    X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface

    Vitchev, R.G.
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    Pireaux, J.J.
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    Conard, Thierry  
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    Bender, Hugo  
    ;
    Wolstenholme, J.
    ;
    Defranoux, C.
    Journal article
    2004, Applied Surface Science, (235) 1_2, p.21-25

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