Browsing by Author "Defranoux, C."
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Publication Accurate electrical activation characterization of CMOS ultra-shallow profiles
Journal article2004, Materials Science and Engineering B, 114-115, p.166-173Publication Characterization of high-k dielectrics by combined spectroscopic ellipsometry (SE) and x-ray reflectometry (XRR)
Proceedings paper2004, Fundamentals of Novel Oxide/Semiconductor Interfaces, 1/12/2003, p.95-101Publication High-k dielectric characterization by combined VUV spectroscopic ellipsometry and X-ray reflectometry
;Boher, P. ;Evrard, P. ;Defranoux, C. ;Darragon, A. ;Sun, Lianchao ;Fouere, J.C.Stehlé, J.L.Proceedings paper2003-12, MRS Fall Meeting Symposium E: Fundamentals of Novel Oxide/Semiconductor Interfaces, 1/12/2003Publication High-k dielectric characterization by VUV spectroscopic ellipsometry and X-ray reflection
Proceedings paper2003, Characterization and Metrology of ULSI Technology, 24/03/2003, p.148-153Publication Multitechnique characterisation of Al203 thin layers deposited on SiO2/Si surface by atomic layer chemical vapour deposition
Proceedings paper2003, AVS 4th International Conference on Microelectronics and Interfaces - ICMI, 3/03/2003, p.36-38Publication On the activation mechanisms of sub-melt laser anneals
Meeting abstract2008, E-MRS Sprng Meeting Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008Publication Physical characterization of mixed HfAlOx layers by complementary analysis techniques
Journal article2004, Materials Science and Engineering B, 109, p.60-63Publication Physical characterization of thin HfO2 layers by the combined analysis with complementary techniques
Proceedings paper2003, Analytical Techniques for Semiconductor Materials and Processes, 27/04/2003, p.223-232Publication Spectroscopic ellipsometry in the VUV range applied to the characterization of atomic layer deposited HfO2,Al2O3 and HfAlOx thin layers for high k dielectrics
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices and Processes, 27/04/2003, p.305-315Publication Vacuum UV spectroscopic ellipsometry applied to the characterization of high-k dielectrics
Oral presentation2003, E-MRS Spring Meeting Symposium I: Functional Metal Oxides - Semiconductor StructuresPublication Vacuum UV spectroscopic ellipsometry applied to the characterization of high-k gate dielectrics
Oral presentation2003, 3rd International Conference on Spectroscopic Ellipsometry - ICSE 3Publication VUV spectroscopic ellipsometry applied to the characterization of high-k dielectrics
Journal article2004, Materials Science & Engineering B, (109) 1_3, p.64-68Publication X-ray photoelectron spectroscopy characterisation of high-k dielectric Al2O3 and HfO2 layers deposited on SiO2/Si surface
Journal article2004, Applied Surface Science, (235) 1_2, p.21-25