Browsing by Author "Deweerd, Wim"
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Publication 45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm
;Henson, Kirklen ;Lander, Rob; ;Dachs, Charles; ;Deweerd, WimProceedings paper2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.851-854Publication ALCVD hafnium silicates for low power gate stacks
Oral presentation2004, Atomic Layer Deposition ConferencePublication ALD deposition of high-k and metal gate stacks for advanced CMOS applications
Proceedings paper2004, Atomic Layer Deposition Conference, 16/08/2004Publication Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O
Journal article2007, Electrochemical and Solid-State Letters, (10) 5, p.H149-H152Publication Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, Workshop "Nouveaux Oxides à Forte Permittivité dans l'Intégration des Semiconducteurs"Publication Engineering ALCVD HfSiO gate stacks for LSTP applications
Oral presentation2005, AVS 5th International Conference on ALDPublication Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface
Journal article2007-02, Journal of Applied Physics, (101) 3, p.34503Publication High-k gate stack engineering – towards meeting low standby power and high performance targets
; ;Brunco, David; ; ; Proceedings paper2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.109-117Publication Implementation of high-k gate dielectrics - a status update
Proceedings paper2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14Publication Integration of high-k gate dielectrics - wet etch, cleaning and surface conditioning
Meeting abstract2003, 204th Meeting of the Electrochemical Society: 8th Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, 13/10/2003Publication Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning
Proceedings paper2004, Cleaning Technology in Semiconducting Device Manufacturing VIII. Proceedings of the International Symposium, 13/10/2003, p.67-77Publication Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2
Proceedings paper2005, 4th International Conference on Semiconductor Technology - ISTC, 14/03/2005, p.62-71Publication Introducing novel metal gate materials for decananometer CMOS in the agile fab: a case study
Proceedings paper2004, Proceedings of the International Symposium on Semiconductor Manufacturing - ISSM, 27/09/2004, p.53-56Publication Issues, achievements and challenges towards intergration of high-k dielectrics
Proceedings paper2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002Publication Managing and controlling contamination in an advanced 8" CMOS pilot line
Proceedings paper2001, Proceedings of the IEEE International Symposium on Semiconductor Manufacturing - ISSM, 8/10/2001, p.425-428Publication Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks
Journal article2007, Microelectronics Reliability, (47) 4_5, p.518-520Publication Molecular beam epitaxy for advanced gate stack materials and processes
;Locquet, Jean-Pierre ;Marchiori, Chiara ;Sousa, M. ;Siegwart, H. ;Caimi, D.Fompeyrine, JeanOral presentation2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility SemiconductorsPublication MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow
Oral presentation2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility SemiconductorsPublication Nitrided hafnium silicates for gate dielectrics
Meeting abstract2004, AVS 51st International Symposium, 14/11/2004, p.DI-MoA5