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Browsing by Author "Deweerd, Wim"

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    45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

    Henson, Kirklen
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    Lander, Rob
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    Demand, Marc  
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    Dachs, Charles
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    Kaczer, Ben  
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    Deweerd, Wim
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    Schram, Tom  
    Proceedings paper
    2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.851-854
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    ALCVD hafnium silicates for low power gate stacks

    Maes, Jan  
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    Laitinen, O.
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    De Witte, Hilde
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    Deweerd, Wim
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    Delabie, Annelies  
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    Conard, Thierry  
    Oral presentation
    2004, Atomic Layer Deposition Conference
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    ALD deposition of high-k and metal gate stacks for advanced CMOS applications

    Heyns, Marc  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Claes, Martine  
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    De Gendt, Stefan  
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    Degraeve, Robin  
    Proceedings paper
    2004, Atomic Layer Deposition Conference, 16/08/2004
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    Atomic layer deposition of hafnium silicate from HfCl4, SiCl4, and H2O

    Fedorenko, Yanina
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    Swerts, Johan  
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    Maes, Jan  
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    Tois, E.
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    Haukka, S.
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    Wang, C.G
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    Wilk, G.
    Journal article
    2007, Electrochemical and Solid-State Letters, (10) 5, p.H149-H152
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    Electrical and physical characterization of MOSFETs with MBE grown La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow

    Conard, Thierry  
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    Pantisano, Luigi
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    Claes, Martine  
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    Demand, Marc  
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    Deweerd, Wim
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    De Gendt, Stefan  
    Oral presentation
    2005, Workshop "Nouveaux Oxides à Forte Permittivité dans l'Intégration des Semiconducteurs"
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    Engineering ALCVD HfSiO gate stacks for LSTP applications

    Swerts, Johan  
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    Deweerd, Wim
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    De Witte, Hilde
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    Maes, Jan  
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    Wilk, Glenn
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    Delabie, Annelies  
    Oral presentation
    2005, AVS 5th International Conference on ALD
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    Fabrication of MBE high-k MOSFETs in a standard CMOS flow

    Pantisano, Luigi
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    Conard, Thierry  
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    Schram, Tom  
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    Deweerd, Wim
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    De Gendt, Stefan  
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    Heyns, Marc  
    Book chapter
    2007
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    Flat-band voltage shift of Ruthenium gated stacks and its link with the formation of a thin Ruthenium oxide layer at the Ruthenium/dielectric interface

    Li, Zilan
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    Schram, Tom  
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    Pantisano, Luigi
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    Stesmans, Andre  
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    Conard, Thierry  
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    Shamuilia, Sheron
    Journal article
    2007-02, Journal of Applied Physics, (101) 3, p.34503
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    High-k gate stack engineering – towards meeting low standby power and high performance targets

    De Gendt, Stefan  
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    Brunco, David
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    Caymax, Matty  
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    Conard, Thierry  
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    Date, Lucien  
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    Delabie, Annelies  
    Proceedings paper
    2005, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 15/05/2005, p.109-117
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    Implementation of high-k gate dielectrics - a status update

    De Gendt, Stefan  
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    Chen, Jerry
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    Carter, Richard
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    Cartier, Eduard
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    Caymax, Matty  
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    Claes, Martine  
    Proceedings paper
    2003, Extended Abstracts of International Workshop on Gate Insulator - IWGI, 6/11/2003, p.10-14
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    Integration of high-k gate dielectrics - wet etch, cleaning and surface conditioning

    De Gendt, Stefan  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Claes, Martine  
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    Conard, Thierry  
    Meeting abstract
    2003, 204th Meeting of the Electrochemical Society: 8th Int. Symp. on Cleaning Technology in Semiconductor Device Manufacturing, 13/10/2003
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    Integration of high-K gate dielectrics - wet etch, cleaning and surface conditioning

    De Gendt, Stefan  
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    Beckx, Stephan  
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    Caymax, Matty  
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    Claes, Martine  
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    Conard, Thierry  
    Proceedings paper
    2004, Cleaning Technology in Semiconducting Device Manufacturing VIII. Proceedings of the International Symposium, 13/10/2003, p.67-77
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    Integration of PVD ruthenium as a pMOS metal gate in scaled planar devices: workfunction and electrical performance on HfO2

    Deweerd, Wim
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    Schram, Tom  
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    Van Hoornick, Nausikaa  
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    Witters, Thomas  
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    Lisoni, Judit
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    Rohr, Erika
    Proceedings paper
    2005, 4th International Conference on Semiconductor Technology - ISTC, 14/03/2005, p.62-71
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    Introducing novel metal gate materials for decananometer CMOS in the agile fab: a case study

    Deweerd, Wim
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    Schram, Tom  
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    Catana, Gabriela
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    Shamiryan, Denis
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    Garaud, Sylvain
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    Hellin, David  
    Proceedings paper
    2004, Proceedings of the International Symposium on Semiconductor Manufacturing - ISSM, 27/09/2004, p.53-56
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    Issues, achievements and challenges towards intergration of high-k dielectrics

    Heyns, Marc  
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    Bender, Hugo  
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    Caymax, Matty  
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    Carter, R
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    Claes, Martine  
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    Conard, Thierry  
    Proceedings paper
    2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002
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    Managing and controlling contamination in an advanced 8" CMOS pilot line

    De Backker, Kris  
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    Deweerd, Wim
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    Lebon, Hans  
    Proceedings paper
    2001, Proceedings of the IEEE International Symposium on Semiconductor Manufacturing - ISSM, 8/10/2001, p.425-428
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    Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

    Li, Zilan
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    Schram, Tom  
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    Pantisano, Luigi
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    Stesmans, Andre  
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    Conard, Thierry  
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    Shamuilia, Sheron
    Journal article
    2007, Microelectronics Reliability, (47) 4_5, p.518-520
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    Molecular beam epitaxy for advanced gate stack materials and processes

    Locquet, Jean-Pierre
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    Marchiori, Chiara
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    Sousa, M.
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    Siegwart, H.
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    Caimi, D.
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    Fompeyrine, Jean
    Oral presentation
    2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors
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    MOSFET with La2HfO7 and HfO2 high-k dielectrics integrated in a conventional flow

    Pantisano, Luigi
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    Conard, Thierry  
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    Claes, Martine  
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    Demand, Marc  
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    Deweerd, Wim
    ;
    De Gendt, Stefan  
    Oral presentation
    2005, MRS Spring Meeting Symposium G: Advanced Gate Dielectric Stacks on High-Mobility Semiconductors
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    Nitrided hafnium silicates for gate dielectrics

    Wang, C.G.
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    Velasco, H.
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    Verghese, M.
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    Shero, E.
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    Wilk, G.
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    Maes, Jan  
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    Laitinen, O.
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    Deweerd, Wim
    Meeting abstract
    2004, AVS 51st International Symposium, 14/11/2004, p.DI-MoA5
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