Browsing by Author "Geenen, Luc"
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Publication A modified capacitance / voltage technique to characterize copper drift diffusion in organic low-K dielectrics
Proceedings paper2000, Advanced Metallization Conference 1999 - AMC 1999, 28/09/1999, p.409-415Publication A modified capacitance/voltage technique to characterize copper drift diffusion in organic low-K dielectrics
Oral presentation1999, Advanced Metallization Conference; September 28-30, 1999; Orlando, FL, USA.Publication Accurate electrical activation characterization of CMOS ultra-shallow profiles
Journal article2004, Materials Science and Engineering B, 114-115, p.166-173Publication Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with other established techniques
Journal article2000, Journal of the Electrochemical Society, (147) 2, p.751-755Publication Analysis of selectively grown epitaxial Si1-xGex by spectroscopic ellipsometry and comparison with RBS and SIMS
Proceedings paper1999, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes, 16/09/1999, p.170-179Publication Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions
Proceedings paper2007, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7, 7/10/2007, p.47-53Publication Artifacts in SIMS depth profiling
Oral presentation1997, SIMS XI; 8-12 September 1997; Orlando, Fl., USA.Publication Atomic layer deposition and remote plasma surface preparation for gate stack applications
Proceedings paper2003, Proceedings AVS 4th International Conference on Microelectronics and Interfaces - ICMI, 3/03/2003, p.12-15Publication Cesium near-surface concentration in low energy, negative mode dynamic SIMS
Journal article2008, Applied Surface Science, (255) 4, p.1316-1319Publication Cesium near-surface concentration in low energy, negative mode dynamic SIMS
Meeting abstract2007-10, SIMS XVI, 29/10/2007Publication Chemical and electrical dopant profiling for P-type junctions formed by solid phase epitaxial regrowth
Proceedings paper2003, Characterization and Metrology for ULSI, 24/03/2003Publication Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth
Journal article2004, Journal of Vacuum Science and Technology B, (22) 1, p.297-301Publication CMOS scaling beyond the 90 nm CMOS technology node: shallow junction and integration challenges
Proceedings paper2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.15-22Publication Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry
Journal article1996, J. Vacuum Science and Technology B, (14) 1, p.311-323Publication Depth profiling of B through silicide on silicon structures, using SIMS and resonant post-ionisation SIMS
Proceedings paper1995, 3rd Int. Workshop on the Measurement and Characterizaton of Ultra-Shallow Dopant Profiles in Semiconductors, 20/03/1995, p.22.1Publication Depth resolution and surface transients in crystalline Silicon at ultra low energies
Meeting abstract2009-09, 17th International Conference on Secondary Ion Mass Spectrometry - SIMS XVII, 14/08/2009, p.247Publication Dopant profiling in Ge
Meeting abstract2003, International Conference on Secondary Ion Mass Spectrometry - SIMS XIV, 14/09/2003, p.163Publication Ge-migration in s-Si-SiGe structures during implantation and annealing
Oral presentation2005, 8th International Workshop on the Fabrication, Characterization and Modeling of Ultra-Shallow Junctions in SemiconductorsPublication In-line and non-destructive analysis of epitaxial Si1-x-yGexCy
Journal article2004, Yield Management Solutions, (6) 2, p.40-47Publication In-line and non-destructive analysis of epitaxial Si1-x-yGexCy by spectroscopic ellipsometry and comparison with other established techniques
Proceedings paper2003, Analytical and Diagnostic Techniques for Semiconductor Materials and Processes, 27/04/2003, p.329-338