Browsing by Author "Goodwin, Michael"

25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions

A disorder-controlled-kinetics model for Negative Bias Temperature Instability and its experimental verification

A functional 41-stage ring oscillator using scaled FinFET devices with 25nm gate lengths and 10nm Fin widths applicable for the 45nm CMOS node

Analysis of the parasitic S/D resistance in multiple-gate FETs

CMP-less integration of fully Ni-silicided metal gates in FinFETs by simultaneous silicidation of the source, drain, and the gate using a novel dual hard mask approach

Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs

Disorder-controlled-kinetics model for negative bias temperature instability and its experimental verification

GIDL (gate-induced drain leakage) and parasitic Schottky barrier leakage elimination in aggressively scaled HfO2/TiN FiNFET devices

Integration challenges for multi-gate devices

Integration of tall triple-gate devices with inserted TaxNy gate in a 0.274μm² 6T-SRAM cell and advanced CMOS logic circuits

Minimization of MuGFET source/drain resistance using wrap-around NiSi contacts

Minimization of the MuGFET contact resistance by integration of NiSi contacts on epitaxially raised source/drain regions

NMOS and PMOS triple gate devices with mid-gap metal gate on oxynitride and Hf based gate dielectrics

On the scalability of source/drain current enhancement in thin film sSOI

Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide fins

Performance improvement of tall triple gate devices with strained SiN layers

Tall triple-gate device with TiN/HfO2 gate stack

Temperature dependence of the negative bias temperature instability in the framework of dispersive transport

The influence of recovery and temperature on the NBTI power-law exponent

Towards optimally shaped fins in P-channel tri-gate FETs: Can fin height be reduced further?