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Browsing by Author "Jech, Markus"

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    A Compact Physics Analytical Model for Hot-Carrier Degradation

    Tyaginov, Stanislav  
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    Grill, Alexander  
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    Vandemaele, Michiel  
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    Grasser, Tibor
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    Hellings, Geert  
    Proceedings paper
    2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020
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    Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces

    Jech, Markus
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    El-Sayed, Al-Moatasem
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    Tyaginov, Stanislav  
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    Shluger, Alexander L
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    Grasser, Tibor
    Journal article
    2019, Physical Review B, (100) 19, p.195302
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    Analysis of the features of hot-carrier degradation in FinFETs

    Makarov, Alexander
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    Tyaginov, Stanislav  
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    Kaczer, Ben  
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    Jech, Markus
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    Vaisman Chasin, Adrian  
    Journal article
    2018-10, Semiconductors, (52) 10, p.1298-1302
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    Border trap based modeling of SiC transistor transfer characteristics

    Tyaginov, Stanislav  
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    Jech, Markus
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    Rzepa, Gerhard
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    Grill, Alexander  
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    El-Sayed, Al-Moatasem
    Proceedings paper
    2018, International Integrated Reliability Workshop (IIRW), 7/11/2018, p.1-5
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    Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability

    Franco, Jacopo  
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    de Marneffe, Jean-Francois  
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    Vandooren, Anne  
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    Kimura, Yosuke  
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    Nyns, Laura  
    Meeting abstract
    2020, 51st IEEE Semiconductor Interface Specialists Conference (SISC), 16/12/2020, p.12.4
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    First–principles parameter–free modeling of n– and p–FET hot–carrier degradation

    Jech, Markus
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    Tyaginov, Stanislav  
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    Kaczer, Ben  
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    Franco, Jacopo  
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    Jabs, Dominic
    Proceedings paper
    2019, IEEE International Electron Device Meeting – IEDM, 7/12/2019, p.24.1.1-24.1.4
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    Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory

    Jech, Markus
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    Ulmann, Bianka
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    Rzepa, Gerhard
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    Tyaginov, Stanislav  
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    Grill, Alexander  
    Journal article
    2019, IEEE Transactions on Electron Devices, (66) 1, p.241-248
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    Impact of the device geometric parameters on hot-carrier degradation in FinFETs

    Tyaginov, Stanislav  
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    Makarov, Alexander
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    Kaczer, Ben  
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    Jech, Markus
    ;
    Vaisman Chasin, Adrian  
    Journal article
    2018, Semiconductors, (52) 13, p.1738-1742
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    Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities

    Jech, Markus
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    Rott, Gunnar
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    Reisinger, Hans
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    Tyaginov, Stanislav  
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    Rzepa, Gerhard
    Journal article
    2020, IEEE Transactions on Electron Devices, (67) 8, p.3315-3322
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    Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors

    Vasilev, Alexander
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    Jech, Markus
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    Grill, Alexander  
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    Rzepa, Gerhard
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    Schleich, Christian
    Proceedings paper
    2020, IEEE International Integrated Reliability Workshop (IIRW), OCT 04-NOV 01, 2020, p.31-34
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    Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures

    Tyaginov, Stanislav  
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    Makarov, Alexander
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    Jech, Markus
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    Vexler, Mikhail
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    Franco, Jacopo  
    Journal article
    2018-02, Semiconductors, (52) 2, p.242-247
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    Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices

    Jech, Markus
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    El-Sayed, Al-Moatasem
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    Tyaginov, Stanislav  
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    Waldhoer, Dominic
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    Bouakline, Foudhil
    Journal article
    2021-01, PHYSICAL REVIEW APPLIED, (16) 1, p.014026-1-014026-24
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    Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants

    Makarov, Alexander
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    Kaczer, Ben  
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    Roussel, Philippe  
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    Vaisman Chasin, Adrian  
    Proceedings paper
    2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference, 23/09/2019, p.262-265
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    Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1-xO2

    El-Sayed, Al-Moatasem
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    Jech, Markus
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    Waldhoer, Dominic
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    Makarov, Alexander  
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    Vexler, Mikhail, I
    Journal article
    2022, PHYSICAL REVIEW MATERIALS, (6) 12, p.nn-Art. 125002
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    TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs

    Vasilev, Alexander
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    Jech, Markus
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    Grill, Alexander  
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    Rzepa, Gerhard
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    Schleich, Christian
    Journal article
    2022-04-19, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 6, p.3290-3295
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    Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors

    Tyaginov, Stanislav  
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    Makarov, Alexander
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    El-Sayed, Al-Moatasem Bellah
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    Vaisman Chasin, Adrian  
    Proceedings paper
    2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022
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    Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs

    Tyaginov, Stanislav  
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    El-Sayed, Al-Moatasem
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    Makarov, Alexander
    ;
    Vaisman Chasin, Adrian  
    Proceedings paper
    2019, IEEE Internaitonal Electron Devices Meeting - IEDM, 7/12/2019, p.21.3.1-21.3.4

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