Browsing by Author "Jech, Markus"
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Publication A Compact Physics Analytical Model for Hot-Carrier Degradation
Proceedings paper2020, IEEE International Reliability Physics Symposium (IRPS), APR 28-MAY 30, 2020Publication Ab initio treatment of silicon-hydrogen bond rupture at Si/SiO2 interfaces
Journal article2019, Physical Review B, (100) 19, p.195302Publication Analysis of the features of hot-carrier degradation in FinFETs
Journal article2018-10, Semiconductors, (52) 10, p.1298-1302Publication Border trap based modeling of SiC transistor transfer characteristics
Proceedings paper2018, International Integrated Reliability Workshop (IIRW), 7/11/2018, p.1-5Publication Enhancing the quality of low temperature SiO2 by atomic hydrogen exposure for excellent NBTI reliability
Meeting abstract2020, 51st IEEE Semiconductor Interface Specialists Conference (SISC), 16/12/2020, p.12.4Publication First–principles parameter–free modeling of n– and p–FET hot–carrier degradation
Proceedings paper2019, IEEE International Electron Device Meeting – IEDM, 7/12/2019, p.24.1.1-24.1.4Publication Impact of mixed negative bias temperature instability and hot carrier stress on MOSFET characteristics – Part II: theory
Journal article2019, IEEE Transactions on Electron Devices, (66) 1, p.241-248Publication Impact of the device geometric parameters on hot-carrier degradation in FinFETs
Journal article2018, Semiconductors, (52) 13, p.1738-1742Publication Mixed hot-carrier/bias temperature instability degradation regimes in full {VG, VD} bias space: implications and peculiarities
Journal article2020, IEEE Transactions on Electron Devices, (67) 8, p.3315-3322Publication Modeling the Hysteresis of Current-Voltage Characteristics in 4H-SiC Transistors
Proceedings paper2020, IEEE International Integrated Reliability Workshop (IIRW), OCT 04-NOV 01, 2020, p.31-34Publication Physical principles of self-consistent simulation of the generation of interface states and the transport of hot charge carriers in field-effect transistors based on metal–oxide–semiconductor structures
Journal article2018-02, Semiconductors, (52) 2, p.242-247Publication Quantum Chemistry Treatment of Silicon-Hydrogen Bond Rupture by Nonequilibrium Carriers in Semiconductor Devices
Journal article2021-01, PHYSICAL REVIEW APPLIED, (16) 1, p.014026-1-014026-24Publication Stochastic modeling of hot-carrier degradation in nFinFETs considering the impact of random traps and random dopants
Proceedings paper2019, ESSDERC 2019 - 49th European Solid-State Device Research Conference, 23/09/2019, p.262-265Publication Structure, electronic properties, and energetics of oxygen vacancies in varying concentrations of SixGe1-xO2
Journal article2022, PHYSICAL REVIEW MATERIALS, (6) 12, p.nn-Art. 125002Publication TCAD Modeling of Temperature Activation of the Hysteresis Characteristics of Lateral 4H-SiC MOSFETs
Journal article2022-04-19, IEEE TRANSACTIONS ON ELECTRON DEVICES, (69) 6, p.3290-3295Publication Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors
Proceedings paper2022, IEEE International Reliability Physics Symposium (IRPS), MAR 27-31, 2022Publication Understanding and physical modeling superior hot-carrier reliability of Ge pNWFETs
Proceedings paper2019, IEEE Internaitonal Electron Devices Meeting - IEDM, 7/12/2019, p.21.3.1-21.3.4