Browsing by Author "Krom, Raymond"
- Results Per Page
- Sort Options
Publication 1mA/μm-ION strained SiGe45%-IFQW pFETs with raised and embedded S/D
; ; ; ; Proceedings paper2011, Symposium on VLSI Technology, 13/06/2011, p.134-135Publication Beyond interface: the impact of oxide border traps on InGaAs and Ge n-MOSFETs
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.28.3Publication Characterization of voltage and frequency dependent parasitics observed in Si passivated germanium metal gate pMOSFETs
Meeting abstract2008, 32nd Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE, 18/05/2008Publication Electrical characterization of Ge-pFETs with HfO2/TiN metal gate: review of possible defects impacting the hole mobility
Proceedings paper2010, Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing, 25/04/2010, p.157-169Publication Electrical characterization of Si capped Hf)2/metal gate Ge-pFETs: physical insight into critical parameters
Meeting abstract2010, 217th Electrochemical Society Meeting, 25/04/2010, p.987Publication Electrical TCAD simulation of a germanium pMOSFET technology
Journal article2010, IEEE Transactions on Electron Devices, (57) 10, p.2539-2546Publication High hole mobility in 65 nm strained Ge p-channel field effect transistors with HfO2 gate dielectric
; ; ; Publication High hole-mobility 65nm biaxially-strained Ge-pFETs: fabrication, analysis and optimization
; ; ; Publication High-mobility Si1-xGex-channel PFETs: layout dependence and enhanced scalability, demonstrating 90% performance boost at narrow widths
Proceedings paper2010, IEEE Symposium on VLSI Technology, 15/06/2010, p.41-42Publication Implant-free SiGe qqantum well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel.
Proceedings paper2010, IEEE International Electron Devices Meeting - IEDM, 6/12/2010, p.241-244Publication Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETs
Proceedings paper2012, 42nd European Solid-State Device Research Conference - ESSDERC, 18/09/2012, p.330-333Publication Negative Bias Temperature Instability (NBTI) in p-FinFETs with 45-degree substrate rotation
Journal article2013, IEEE Electron Device Letters, (34) 10, p.1211-1213Publication On the importance of source/drain series resistance in implant-free SiGe quantum well FETs
Proceedings paper2011, Silicon Nanoelectronics Workshop, 12/06/2011, p.7-8Publication On the Rseries extraction techniques for sub-22nm CMOS Finfet and SiGe technologies
Proceedings paper2012, International Symposium on VLSI Technology, Systems and Applications - VLSI-TSA, 23/04/2012Publication Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs
Proceedings paper2012, International Electron Devices Meeting - IEDM, 10/12/2012, p.18.2Publication Scalability and threshold voltage dependency for the implant-free SiGe quantum well pFET with raised source/drain
Proceedings paper2011, Silicon Nanoelectronics Workshop, 12/06/2011, p.5-6Publication Si1-xGex-channel PFETs: scalability, layout considerations and compatibility with other stress techniques
Proceedings paper2011, Dielectrics in Nanosystems -and- Graphene, Ge/III-V, Nanowires and Emerging Materials for Post-CMOS Applications 3, 1/05/2011, p.493-503Publication The implant-free quantum well field-effect-transistor: harnessing the power of heterostructures
Journal article2012, Thin Solid Films, (520) 8, p.3326-3331Publication The implant-free quantum well field-effect-transistor: Harnessing the power of heterostructures
Proceedings paper2011, 7th International Conference on Si Epitaxy and Heterostructures - ICSI-7, 29/08/2011