Browsing by Author "Leys, Frederik"
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Publication 25% drive current improvement for p-type Multiple Gate FET (MuGFET) devices by the introduction of recessed Si0.8Ge0.2 in the source and drain regions
Proceedings paper2005, Symposium on VLSI Technology. Digest of Technical Papers, 14/06/2005, p.194-195Publication A step towards a better understanding of silicon passivated (100) Ge p-channel
; ; ; ; Proceedings paper2007, Advanced Gate Stack , Source/Drain and Channel Engineering for Si-Based CMOS 3, 6/05/2007, p.53-63Publication Analysis of the pre-epi bake conditions on the defect creation in recessed Si1-xGex S/D junctions
Proceedings paper2007, Analytical and Diagnostic Techniques for Semiconductor Materials, Devices, and Processes 7, 7/10/2007, p.47-53Publication Application of HCl gas phase etch in the production of novel devices
Proceedings paper2008-05, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS. 4: New Materials, Processes, and Equipment, 18/05/2008, p.329-335Publication Application of single-wafer wet cleaning prior to epitaxial SiGe process
Journal article2009, Solid State Phenomena, 145-146, p.173-176Publication Atomic layer deposition as an enabling technology for fabrication of germanium MOS transistor
Oral presentation2007, 7th International Conference Atomic Layer Deposition Conference - ALDPublication Challenges of single-wafer wet cleaning for low temperature pre-epitaxial treatment of SiGe
Proceedings paper2008, Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS, 18/09/2006, p.243-246Publication Characteristics of Selective Epitaxial SiGe and Si Deposition processes for recessed source/drain applications
Proceedings paper2005, ASM Users Meeting, 29/09/2005Publication Characteristics of selective epitaxial SiGe deposition processes for recesssed source/drain applications
Proceedings paper2005, 4th International conference on Silicon Epitaxy and Heterostructures - ICSI-4, 23/05/2005, p.112-113Publication Conformal doping of FINFET's: a fabrication and metrology challenge
Meeting abstract2008, E-MRS Symposium I: Front-End Junction and Contact Formation in Future Silicon/Germanium Based Devices, 26/05/2008Publication Conformal ultra shallow junctions by vapor phase doping with boron
Proceedings paper2008-05, 4th International SiGe Technology and Device Meeting - ISTDM, 11/05/2008, p.229-230Publication Demonstration of recessed SiGe S/D and inserted metal gate on HfO2 for high performance pFETs
Proceedings paper2005-12, Technical Digest International Electron Devices Meeting (IEDM), 5/12/2005, p.907-910Publication Difference in the nonlinear optical response of epitaxial Si on Ge(001) grown from SiH4 at 500 °C and from Si3H8 at 350 °C
Oral presentation2008, E-MRS Spring Meeting Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOSPublication Difference in the nonlinear optical response of epitaxial Si on Ge(100) grown from SiH4 at 500°C and from Si3H8 at 350°C due to segregation of Ge
Journal article2009, Applied Physics Letters, (94) 6, p.61123Publication Doubling or quadrupling MuGFET Fin integration scheme with higher pattern fidelity, lower CD variation and higher layout efficiency
Oral presentation2007, IEEE International Solid-State Circuits Conference - ISSCCPublication Effect of chemical growth air filter for wafer storage before epitaxial growth
Proceedings paper2008, SEMATECH Meeting, 31/03/2008Publication Electrical and reliability characterization of metal-gate/HfO2/Ge FET's with Si passivation
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2067-2070Publication Epitaxial growth on germanium: kinetics and layer quality
Oral presentation2005, 1st International Workshop on New Group IV, Semiconductor NanoelectronicsPublication Epitaxial strained silicon passivation of the Ge/high-k interface in germanium pMOSFET
Proceedings paper2008, 4th International SiGe Technology and Device meeting, 11/05/2008Publication Epitaxy solutions for Ge MOS technology
Proceedings paper2005, 4th International Conference on Silicon Epitaxy and Heterostructures - ICSI-4, 23/05/2005