Browsing by Author "Lindsay, Richard"

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Kittl, Jorge

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Henson, Kirklen

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Torregiani, Cristina

Proceedings paper

2003, CMOS Front-End Materials and Process Technology, 21/04/2003, p.261-266

Publication

A new technique to fabricate ultra-shallow-junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth

Loo, Roger

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Caymax, Matty

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Meunier-Beillard, Philippe

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Peytier, Ivan

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Holsteyns, Frank

Journal article

2004, Applied Surface Science, (224) 1_4, p.63-67

Publication

A new technique to fabricate Ultra-Shallow-Junctions, combining in-situ vapour HCl etching and in-situ doped epitaxial SiGe re-growth

Loo, Roger

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Caymax, Matty

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Meunier-Beillard, Philippe

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Peytier, Ivan

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Holsteyns, Frank

Meeting abstract

2003-01, Book of Abstracts 1st International SiGe Technology and Device Meeting - ISTDM, 15/01/2003, p.159-160

Publication

A practical baseline process for advanced CMOS devices research

Ponomarev, Youri

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Loo, Josine

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Rittersma, Chris

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Lander, Rob

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Hooker, Jacob

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Doornbos, Gerben

Proceedings paper

2003, Proceedings 33rd European Solid-State Device Research Conference - ESSDERC, 16/09/2003, p.27-30

Publication

Advanced front-end processes for the 45nm CMOS technology node

Collart, E.J.H.

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Felch, S.B.

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Graoui, H.

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Tallavarjula, S.

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Lindsay, Richard

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Oral presentation

2004, E-MRS Spring Meeting Symposium B: Materials Science Issues in Advanced CMOS Source-Drain Engineering

Publication

Advanced PMOS device architecture for highly-doped ultra-shallow junctions

Surdeanu, Radu

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Lindsay, Richard

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Van Dal, Mark

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Doornbos, Gerben

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Dachs, C.J.J.

Journal article

2004, Japanese J. of Appl. Phys. Part 1, (43) 4B, p.1778-1783

Publication

An (un)solvable problem in SIMS: B-interfacial profiling

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Janssens, Tom

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Loo, Roger

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Caymax, Matty

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Peytier, Ivan

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Lindsay, Richard

Journal article

2003, Applied Surface Science, 203-204, p.371-376

Publication

Analysis of junctions formed in strained Si/SiGe substrates

Eneman, Geert

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Simoen, Eddy

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Lindsay, Richard

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Verheyen, Peter

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Delhougne, Romain

Proceedings paper

2004, High-Mobility Group-IV Materials and Devices, 12/04/2004, p.187-192

Publication

Analysis of silicide / diffusion contact resistance making use of transmission line stuctures

Akheyar, Amal

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de Potter de ten Broeck, Muriel

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Lindsay, Richard

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Tempel, Georg

Proceedings paper

2002, Silicon Materials - Processing, Characterization, and Reliability, 1/04/2002, p.53-58

Publication

Applications of Ni-based silicides to 45 nm CMOS and beyond

Kittl, Jorge

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Chamirian, Oxana

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Pawlak, Malgorzata

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Van Dal, Mark

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Akheyar, Amal

Proceedings paper

2004, Silicon Front-End Junction Formation - Physics and Technology, 12/04/2004, p.31-42

Publication

Arsenic junction thermal stability and high-dose boron-pocket activation during SPER in nMOS transistors

Severi, Simone

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Duffy, Ray

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Augendre, Emmanuel

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Henson, Kirklen

Journal article

2007, IEEE Electron Device Letters, (28) 3, p.198-200

Publication

Carrier illumination for characterization of ultra-shallow doping profiles

Clarysse, Trudo

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Lindsay, Richard

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Budiarto, E.

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Borden, Peter

Proceedings paper

2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.321-330

Publication

Carrier illumination for characterization of ultrashallow doping profiles

Clarysse, Trudo

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Lindsay, Richard

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Budiarto, E.

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Borden, P.

Journal article

2004-02, Journal of Vacuum Science and Technology B, (22) 1, p.439-443

Publication

Carrier illumination for monitoring of CMOS ultra-shallow junctions

Clarysse, Trudo

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Lindsay, Richard

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Borden, P.

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Budiarto, E.

Oral presentation

2002, E-MRS Spring Meeting Symposium E: Advanced Characterisation of Semiconductor Materials and Devices

Publication

Challenges in scaling of CMOS devices towards 65nm node

Jurczak, Gosia

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Veloso, Anabela

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Rooyackers, Rita

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Augendre, Emmanuel

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Mertens, Sofie

Proceedings paper

2003-06, Diagnostic and Yield, 23/06/2003

Publication

Channel engineering and junction overlap issues for ultra-shallow junctions formed by SPER in the 45 nm CMOS technology node

Severi, Simone

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Henson, Kirklen

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Lindsay, Richard

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Surdeanu, Radu

Proceedings paper

2004-04, Silicon Front-End Junction Formation - Physics and Technology, 8/04/2004, p.455-460

Publication

Channel engineering towards a full low temperature process solution for the 45 nm technology node

Severi, Simone

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Henson, Kirklen

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Lindsay, Richard

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De Meyer, Kristin

Proceedings paper

2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.225-229

Publication

Characterization of the B and As pile-up at the Si-SiO2 interface

Fruehauf, Jens

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Lindsay, Richard

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Maex, Karen

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Bergmaier, A.

Proceedings paper

2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 27/04/2003, p.399-404

Publication

Chemical and electrical dopant evolution during solid phase epitaxial regrowth

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Lindsay, Richard

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Kittl, Jorge

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Surdeanu, Radu

Proceedings paper

2003, Ultra Shallow Junctions. 7th Int. Worksh. Fabrication, Characterization and Modeling of Ultra Shallow Doping Profiles in Semic., 28/04/2003, p.227-233

Publication

Chemical and electrical dopant profiling for P-type junctions formed by solid phase epitaxial regrowth

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Lindsay, Richard

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Kittl, Jorge

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