Browsing by Author "Luo, Jun"
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Publication A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/AC NBTI Stress/Recovery Condition in Si p-FinFETs
Proceedings paper2021, IEEE International Reliability Physics Symposium (IRPS), MAR 21-24, 2021Publication Alleviation of Negative-Bias Temperature Instability in Si p-FinFETs With ALD W Gate-Filling Metal by Annealing Process Optimization
Journal article2021, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 9, p.229-235Publication Comparison of DC/AC Hot Carrier Degradation between Short Channel Si Bulk and SiGe SOI p-FinFETs
;Chang, Hao ;Zhang, Yongkui ;Zhou, Longda ;Ji, Zhigang ;Yang, Hong ;Liu, QianqianLi, YongliangProceedings paper2021, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), SEP 14-OCT 13, 2021Publication Defect engineering for shallow n-type junctions in germanium: facts and fiction
; ; ;Liu, Jinbiao ;Luo, Jun ;Zhao, Chao; Journal article2016, Physica Status Solidi A, (213) 11, p.2799-2808Publication Distinction between silicon and oxide traps using single-trap spectroscopy
Meeting abstract2014, E-MRS Spring Meeting Symposium H: Analytical Techniques for Precise Characterization of Nanomaterials - ALTECH, 26/05/2014Publication Impact of the effective work function gate metal on the low-frequency noise of gate-all-around Silicon-on-Insulator NWFETs
;Fang, Wen; ; ;Cho, Moon Ju; ; Luo, JunJournal article2016, IEEE Electron Device Letters, (37) 4, p.363-365Publication Implications of inelastic tunneling on the depth of oxide traps in MOSFETs assessed by RTS or BTI
Proceedings paper2015, International Conference on 1/f Noise and Fluctuations - ICNF, 2/06/2015, p.1-4Publication In-band label extractor based on cascaded Si ring resonators enabling 160Gb/s optical packet switching modules
Journal article2014-05, Journal of Lightwave Technology, (32) 9, p.1647-1653Publication Low frequency noise characterization of 22nm PMOS featuring with filling W gate using different precursors
;He, Liang; ;Claeys, Cor ;Wang, Guilei ;Luo, Jun ;Zhao, Chao ;Li, Junfeng ;Chen, HuaHu, YinProceedings paper2017, China Semiconductor Technology International Conference - CSTIC, 12/03/2017Publication Low frequency noise characterization of GeOx passivated Germanium MOSFETs
Journal article2015, IEEE Transactions on Electron Devices, (62) 7, p.2078-2083Publication Low-frequency noise spectroscopy of bulk and border traps in nanoscale devices
; ;Cretu, Bogdan ;Fang, Wen ;Aoulaiche, Marc ;Routoure, Jean-Marc ;Carin, RegisLuo, JunProceedings paper2016, 16th Gettering and Defect Engineering in Semiconductors Conference - GADEST XVI, 20/09/2015, p.449-458Publication Low-frequency noise study of Ge pMOSFETs with HfO2/Al2O3/GeOx gate stack
Proceedings paper2015, International Conference on Noise and Fluctuations - ICNF, 2/06/2015, p.1-4Publication Random telegraph noise: the key to single defect studies in nano-devices
Journal article2016, Thin Solid Films, 613, p.2-5Publication Study of DID/ID of a single charge trap in UTBOX silicon films
Proceedings paper2014, IEEE 12th International Conference on Solid-State and Integrated Circuit Technology - ICSICT, 28/10/2014, p.1643-1645Publication Study of random telegraph noise in UTBOX silicon-on-insulator nMOSFETs
;Li, Chi-Kang ;Fang, Wen; ;Aoulaiche, Marc ;Wu, Yuh-Renn ;Luo, Jun ;Zhao, ChaoClaeys, CorProceedings paper2014, China Semiconductor Technology International Conference - CSTIC, 16/03/2014, p.109-114Publication The assessment of border traps in high-mobility channel materials
Proceedings paper2015, Semiconductors, Dielectrics, and Metals for Nanoelectronics 13, 11/10/2015, p.205-217Publication Towards single-trap spectroscopy: generation-recombination noise in UTBOX SOI nMOSFETs
Journal article2015, Physica Status Solidi C, (12) 3, p.292-298Publication Towards single-trap spectroscopy: Generation-recombination noise in UTBOX SOI nMOSFETs
Meeting abstract2014, E-MRS Spring Meeting Symposium H: Analytical Techniques for Precise Characterization of Nanomaterials - ALTECH, 26/05/2014