Browsing by Author "Margetis, Joe"
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Publication Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
Meeting abstract2016-11, JSPS - FZ-Jülich Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", 24/11/2016, p.20-21Publication Enhanced B doping in CVD-grown GeSn:B using B $d-doping layers
Journal article2018-02, Journal of Crystal Growth, 483, p.285-290Publication Epitaxial GeSn: impact of process conditions on material quality
Meeting abstract2018-05, Joint ISTDM/ICSI Conference, 27/05/2018, p.195-196Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials
Meeting abstract2019, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.214-215Publication Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
Proceedings paper2019-10, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.7-10Publication Epitaxial growth schemes for fin and Gate All Around devices
Meeting abstract2018, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 23/02/2018Publication Epitaxial growth schemes for Fin and Gate-All-Around devices
Meeting abstract2018-05, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018, p.65-66Publication Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy
Publication Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices
Meeting abstract2018, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018Publication Gallium-doped SiGe and Ge via MO-RPCVD epitaxy
; ; Publication Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor
Publication Improving the electrical properties of epitaxial SiGe:B with excimer laser annealing treatments
Meeting abstract2019, 2019 E-MRS Fall Meeting, 16/09/2019Publication Investigation of low temperature SiP epitaxy on 300 mm Si substrates
Meeting abstract2020, ECS Prime 2020, 4/10/2020, p.G03-1734Publication Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Proceedings paper2016, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 7, 2/10/2016, p.347-359Publication Selective epitaxial growth of high-P Si:P for dource/drain formation in advanced Si nFETs
Meeting abstract2016, PRiME 2016 - 230th ECS Meeting (Fall) - Electrochemical Society: SiGe, Ge & Related Compounds: Materials, Processing and Devices, 2/10/2016, p.2003Publication Very low temperature epitaxy of group-IV semiconductors for use in finFET, stacked nanowires and monolithic 3D integration
Meeting abstract2018, ECS Fall Meeting, SiGe & Ge Symposium, 30/09/2018, p.1050Publication Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Proceedings paper2018, SiGe, Ge, and Related Materials: Materials, Processing, and Devices 8, 30/09/2018, p.163-175Publication Very low temperature epitaxy of group-IV semiconductors for use in FinFET, stacked nanowires and monolithic 3D integration
Journal article2019, ECS Journal of Solid State Science and Technology, (8) 8, p.P392-P399