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Browsing by Author "Naili, Mohamed"

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    Alternative gate insulator materials for future generation MOSFETs

    Heyns, Marc  
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    Bender, Hugo  
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    Carter, Richard
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    Caymax, Matty  
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    Conard, Thierry  
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    De Gendt, Stefan  
    Oral presentation
    2001, International Forum on Semiconductor Technology - IFST; 7-8 March 2001; Antwerpen, Belgium.
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    Charge trapping in SiOx/ZrO2 and SiOx/TiO2 gate dielectric stacks

    Houssa, Michel  
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    Naili, Mohamed
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    Heyns, Marc  
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    Stesmans, Andre  
    Journal article
    2001, Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, (40) 4B, p.2804-2809
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    Charge trapping in SiOx/ZrO2 gate dielectric stacks

    Houssa, Michel  
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    Naili, Mohamed
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    Heyns, Marc  
    ;
    Stesmans, Andre  
    Proceedings paper
    2000, Proceedings of the International Conference on Solid State Devices and Materials; Sendai, Japan., p.230-231
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    Charge trapping in very thin high-permittivity gate dielectric layers

    Houssa, Michel  
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    Stesmans, Andre  
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    Naili, Mohamed
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    Heyns, Marc  
    Journal article
    2000, Applied Physics Letters, (77) 9, p.1381-1383
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    Constant voltage stress induced degradation in HfO2/SiO2 gate dielectric stacks

    Xu, Zhen
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    Houssa, Michel  
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    Carter, Richard
    ;
    Naili, Mohamed
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    De Gendt, Stefan  
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    Heyns, Marc  
    Journal article
    2002, Journal of Applied Physics, (91) 12, p.10127-10129
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    Effect of O-2 post-deposition anneals on the properties of ultra-thin SiOx/ZrO2 gate dielectric stacks

    Houssa, Michel  
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    Naili, Mohamed
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    Zhao, Chao
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    Bender, Hugo  
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    Heyns, Marc  
    ;
    Stesmans, Andre  
    Journal article
    2001, Semiconductor Science and Technology, (16) 1, p.31-38
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    Electrical and physical characterization of high-k dielectric layers

    Houssa, Michel  
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    Naili, Mohamed
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    Afanas'ev, V. V.
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    Heyns, Marc  
    ;
    Stesmans, Andre  
    Proceedings paper
    2001, International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers, 18/04/2001, p.196-199
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    Electrical properties of metal-insulator-semiconductor devices with high permittivity gate dielectric layers

    Houssa, Michel  
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    Degraeve, Robin  
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    Heyns, Marc  
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    Kaczer, Ben  
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    Groeseneken, Guido  
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    Naili, Mohamed
    Oral presentation
    2000, Semicon Europe
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    High k dielectric materials prepared by atomic layer CVD

    Heyns, Marc  
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    Bender, Hugo  
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    Carter, Richard
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    Caymax, Matty  
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    Conard, Thierry  
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    De Gendt, Stefan  
    Oral presentation
    2001, 12th INFOS Conference - Insulating Films on Semiconductors; June 2001; Udine, Italy.
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    High temperature grazing incidence XRD study on in-situ crystallization in ultra-thin oxide films

    Zhao, Chao
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    Roebben, G.
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    Young, Edward
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    Bender, Hugo  
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    Houssa, Michel  
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    Naili, Mohamed
    Oral presentation
    2000, 11th Workshop on Dielectrics in Microelectronics; 13-15 November 2000; Munich, Germany.
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    In situ crystallisation in ZrO2 thin films during high temperature X-ray diffraction

    Zhao, Chao
    ;
    Roebben, G.
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    Bender, Hugo  
    ;
    Young, Edward
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    Haukka, S.
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    Houssa, Michel  
    ;
    Naili, Mohamed
    Journal article
    2001, Microelectronics Reliability, (41) 7, p.995-998
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    Model for the charge trapping in high permittivity gate dielectric stacks

    Houssa, Michel  
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    Naili, Mohamed
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    Heyns, Marc  
    ;
    Stesmans, Andre  
    Journal article
    2001, Journal of Applied Physics, (89) 1, p.792-794
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    Surface cleaning issues in thin-oxide technology

    Mertens, Paul  
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    Bearda, Twan
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    Houssa, Michel  
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    Loewenstein, Lee
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    Teerlinck, Ivo
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    De Gendt, Stefan  
    Oral presentation
    1999, 30th IEEE Semiconductor Interface Specialists' Conference
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    Trap-assisted tunneling in high permittivity gate dielectric stacks

    Houssa, Michel  
    ;
    Tuominen, Marko
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    Naili, Mohamed
    ;
    Afanas'ev, V.
    ;
    Stesmans, Andre  
    ;
    Haukka, S.
    Journal article
    2000, J. Appl. Physics, (87) 12, p.8615-8620

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