Browsing by Author "Nigam, Tanya"
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Publication A fast and simple methodology for lifetime prediction of ultra-thin oxides
Proceedings paper1999, Proceedings of the International Reliability Physics Symposium; March 1999; San Diego, Ca, USA., p.381-388Publication Advanced cleaning and ultra-thin oxide technology
; ; ; ; Publication An inelastic quantum tunnelling model for current conduction after soft-breakdown
Oral presentation1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.Publication Analysis of the gate voltage fluctuations in ultra-thin gate oxides after soft breakdown
Proceedings paper1998, Technical Digest International Electron Devices Meeting - IEDM, 6/12/1998, p.909-912Publication Characteristics and correlated fluctuations of the gate and substrate current after soft oxide breakdown
Proceedings paper1998, Proceedings Solid State Devices and Materials Conference; September 1998; Hiroshima, Japan.Publication Characterization of silicon oxynitride films by grazing-emission X-ray fluorescence spectrometry
Journal article2000, Thin Solid Films, (359) 2, p.197-202Publication Constant current charge-to-breakdown: still a valid tool to study the reliability of MOS structures
Proceedings paper1998, Proceedings International Reliability Physics Symposium - IRPS, 30/03/1998, p.62-69Publication Cost-effective cleaning and high-quality thin gate oxides
Journal article1999, IBM Journal of Research and Development, (43) 3, p.339-350Publication Critical processes for ultra-thin gate oxide integrity
; ; ; Publication Definition of dielectric breakdown for ultra thin (<2nm) gate oxides
Journal article1997, Solid-State Electronics, (41) 5, p.725-728Publication Effect of extreme surface roughness on the electrical characteristics of ultra-thin gate oxides
Journal article1999, Solid-State Electronics, (43) 1, p.159-168Publication Effect of Si surface roughness on the current-voltage characteristics of ultra-thin gate oxides
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.249-252Publication Effect of Si surface roughness on the current-voltage characteristics of ultra-thin gate oxides
Oral presentation1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication Gate voltage dependence of reliability for ultra-thin oxides
Proceedings paper1997, Proceedings of the Solid State Devices and Materials Conference - SSDM, 16/09/1997, p.90-91Publication Growth and reliability of 3nm N2O gate oxide
Oral presentation1996, 27th IEEE Semiconductor Interface Specialists Conference (SISC); December 5-7, 1996; San Diego, Calif., USA.Publication Growth Kinetics, Electrical Characterization and Reliability Study of sub-5 nm Gate Dielectrics
Nigam, TanyaPHD thesis1999-05Publication Hot carrier degradation and time-dependent dielectric breakdown in oxides
Journal article1999, Microelectronic Engineering, (49) 1_2, p.27-40Publication Influence of Boron diffusion on reliability of ultra-thin oxides
Oral presentation1998, 29th IEEE Semiconductor Interface Specialists Conference - SISC; 3-5 Dec. 1998; San Diego, CA, USA.Publication Influence of boron diffusion on ultra-thin oxides
Proceedings paper1997, Materials Reliability in Microelectronics VII, 31/03/1997, p.101-106Publication Investigation and comparison of the noise in the gate and substrate current after soft-breakdown
Journal article1999, Japanese Journal of Applied Physics. Part 1: Regular Papers, (38) 4B, p.2219-2222