Browsing by Author "Ohashi, Takeyoshi"
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Publication 3D measurement of 3D NAND memory hole with CD-SEM and tilted FIB
;Ohashi, Takeyoshi ;Yamaguchi, Atsuko ;Hasumi, Kazuhisa ;Ikota, MasamiTan, Chi LimProceedings paper2017, 43rd International Conference on Micro and Nanoengineering - MNE, 18/09/2017, p.OC073Publication Contact inspection and resistance - capacitance measurement of Si nanowire with SEM voltage contrast
Journal article2019, Journal of Micro/Nanolithography MEMS and MOEMS, (18) 2, p.21205Publication Contact inspection of Si nanowire with SEM voltage contrast
Proceedings paper2018, Metrology, Inspection, and Process Control for Microlithography XXXII, 25/02/2018, p.105850BPublication EB metrology of Ge channel gate-all-around FET: buckling evaluation and EB damage assessment
Proceedings paper2020, Metrology, Inspection, and Process Control for Microlithography XXXIV, 23/02/2020, p.1132525Publication Electron beam metrology for advanced technology nodes
Journal article2019, Japanese Journal of Applied Physics, (58) SD, p.SD0801Publication Enabling CD SEM metrology for 5nm technology node and beyond
Proceedings paper2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 26/02/2017, p.1014512Publication Line width roughness accuracy analysis during pattern transfer in self-aligned quadruple patterning process
Proceedings paper2016, Metrology, Inspection, and Process Control for Microlithography XXX, 21/02/2016, p.97780VPublication Precise measurement of thin film thickness in 3D-NAND device with CD-SEM
;Ohashi, Takeyoshi ;Atsuko, Yamaguchi ;Kobayashi, Takashi ;Inoue, OsamuHasumi, KazuhisaOral presentation2016, 42nd Micro and Nano Engineering ConferencePublication Precise measurement of thin-film thickness in 3D-NAND device with CD-SEM
Journal article2018, Journal of Micro/Nanolithography MEMS and MOEMS, (17) 2, p.24002Publication SEM Inspection of Nanowire Devices: Contact inspection, Resistance and Capacitance Measurement and Buckling Evaluation
Oral presentation2019, MNE 2019Publication Variability study with CD-SEM metrology for STT-MRAM: Correlation analysis between physical dimensions and electrical property of the memory element
;Ohashi, Takeyoshi ;Yamaguchi, Atusko ;Hasumi, Kazuhisa ;Inoue, OsamuIkata, MasamiMeeting abstract2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 27/02/2017, p.101450HPublication Variability study with CD-SEM metrology for STT-MRAM: correlation analysis between physical dimensions and electrical property of the memory element
;Ohashi, Takeyoshi ;Yamaguchi, Atsuko ;Hasumi, Kazuhisa ;Inoue, OsamuIkota, MasamiProceedings paper2017, Metrology, Inspection, and Process Control for Microlithography XXXI, 26/02/2017, p.101450H