Browsing by Author "Petry, Jasmine"
- Results Per Page
- Sort Options
Publication Band gap of ALCVD mixed oxide AlZrO and HfAlO measured by XPS
Oral presentation2003, E-MRS Spring Meeting Symposium I: Functional Metal Oxides - Semiconductor StructuresPublication Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM
Journal article2005, Microelectronics Reliability, (45) 5_6, p.811-814Publication C-AFM Characterization of the dependance of AlHfOx electrical behaviour on post deposition annealing temperature
Oral presentation2003, 13th Bi-Annual Conference on Insulating Films on Semiconductors - INFOSPublication Characterization of high-k films grown by atomic layer deposition
Oral presentation2002, MRS Spring MeetingPublication Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM
Journal article2005, Microelectronic Engineering, 80, p.436-439Publication Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates
; ; ; ; ;Petry, JasmineJournal article2004-03, J. Electrochemical Society, (151) 4, p.F77-F80Publication Critical metrology for ultrathin high k dielectrics
Proceedings paper2003, Characterization and Metrology for ULSI Technology, 24/03/2003, p.129-138Publication Effect of degas before metal gate deposition on the threshold voltage
Journal article2007, Microelectronic Engineering, (84) 9_10, p.2255-2258Publication Effect of N2 anneal on thin HfO2 layers studied by C-AFM
Journal article2004, Microelectronic Engineering, (72) 1_4, p.174-179Publication Effect of N2 annealing on AlxZryOz oxide
Oral presentation2002, AVS 49th International SymposiumPublication Effect of N2 annealing on AlZrO oxide
Journal article2003, Journal of Vacuum Science & Technology A, (21) 4, p.1482-1487Publication Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope
Journal article2005, Nanotechnology, (16) 9, p.1506-1511Publication Fabrication of conductive AFM probes and their use in microelectronics
Oral presentation2003, Veeco SPM Conference and Users MeetingPublication GAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature
Journal article2004, Microelectronic Engineering, (72) 1_4, p.191-196Publication Gatestacks for scalable high-performance FinFETs
Proceedings paper2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.681-684Publication Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon
Proceedings paper2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.197-202Publication High resolution electrical characterization of advanced CMOS devices
Proceedings paper2004, Seeing at the Nanoscale II, 13/10/2004, p.S4-3-76Publication Impact of incorporated Al on the TiN/HfO2 interface effective work function
Journal article2008, Journal of Applied Physics, (104) 7, p.74501Publication Issues, achievements and challenges towards integration of high-k dielectrics
Proceedings paper2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?Publication Issues, achievements and challenges towards intergration of high-k dielectrics
Proceedings paper2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002
- «
- 1 (current)
- 2
- 3
- »