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Browsing by Author "Petry, Jasmine"

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    Band gap of ALCVD mixed oxide AlZrO and HfAlO measured by XPS

    Petry, Jasmine
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    Vandervorst, Wilfried  
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    Conard, Thierry  
    Oral presentation
    2003, E-MRS Spring Meeting Symposium I: Functional Metal Oxides - Semiconductor Structures
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    Breakdown spots on ultra-thin (EOT<1.5nm) HfO2/SiO2 stacks observed with enhanced - CAFM

    Blasco, X.
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    Nafria, M.
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    Aymerich, X.
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    Petry, Jasmine
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    Vandervorst, Wilfried  
    Journal article
    2005, Microelectronics Reliability, (45) 5_6, p.811-814
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    C-AFM Characterization of the dependance of AlHfOx electrical behaviour on post deposition annealing temperature

    Blasco, X.
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    Petry, Jasmine
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    Nafria, M.
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    Aymerich, X.
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    Vandervorst, Wilfried  
    Oral presentation
    2003, 13th Bi-Annual Conference on Insulating Films on Semiconductors - INFOS
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    Characterization of high-k films grown by atomic layer deposition

    Vandervorst, Wilfried  
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    Conard, Thierry  
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    Petry, Jasmine
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    Brijs, Bert
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    Bender, Hugo  
    Oral presentation
    2002, MRS Spring Meeting
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    Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM

    Polspoel, Wouter
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    Vandervorst, Wilfried  
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    Petry, Jasmine
    ;
    Conard, Thierry  
    Journal article
    2005, Microelectronic Engineering, 80, p.436-439
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    Composition and growth kinetics of the interfacial layer for MOCVD HfO2 layers on Si substrates

    Van Elshocht, Sven  
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    Caymax, Matty  
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    De Gendt, Stefan  
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    Conard, Thierry  
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    Petry, Jasmine
    ;
    Date, Lucien  
    Journal article
    2004-03, J. Electrochemical Society, (151) 4, p.F77-F80
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    Critical metrology for ultrathin high k dielectrics

    Vandervorst, Wilfried  
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    Brijs, Bert
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    Bender, Hugo  
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    Conard, Thierry  
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    Petry, Jasmine
    Proceedings paper
    2003, Characterization and Metrology for ULSI Technology, 24/03/2003, p.129-138
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    Effect of degas before metal gate deposition on the threshold voltage

    Petry, Jasmine
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    Xiong, K.
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    Ragnarsson, Lars-Ake  
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    Singanamalla, Raghunath
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    Hooker, Jacob
    Journal article
    2007, Microelectronic Engineering, (84) 9_10, p.2255-2258
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    Effect of N2 anneal on thin HfO2 layers studied by C-AFM

    Petry, Jasmine
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    Vandervorst, Wilfried  
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    Blasco, X.
    Journal article
    2004, Microelectronic Engineering, (72) 1_4, p.174-179
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    Effect of N2 annealing on AlxZryOz oxide

    Petry, Jasmine
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    Richard, Olivier  
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    Vandervorst, Wilfried  
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    Conard, Thierry  
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    Chen, Jerry
    Oral presentation
    2002, AVS 49th International Symposium
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    Effect of N2 annealing on AlZrO oxide

    Petry, Jasmine
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    Richard, Olivier  
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    Vandervorst, Wilfried  
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    Conard, Thierry  
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    Chen, Jerry
    Journal article
    2003, Journal of Vacuum Science & Technology A, (21) 4, p.1482-1487
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    Electrical characterization of high-dielectric-constant/SiO2 metal-oxide-semiconductor gate stacks by a conductive atomic force microscope

    Blasco, X.
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    Porti, M.
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    Nafria, M.
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    Petry, Jasmine
    ;
    Vandervorst, Wilfried  
    Journal article
    2005, Nanotechnology, (16) 9, p.1506-1511
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    Fabrication of conductive AFM probes and their use in microelectronics

    Fouchier, Marc
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    Alvarez, David
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    Eyben, Pierre  
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    Duhayon, Natasja  
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    Petry, Jasmine
    Oral presentation
    2003, Veeco SPM Conference and Users Meeting
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    GAFM characterization of the dependence of HfAlOx electrical behavior on post-deposition annealing temperature

    Blasco, X.
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    Petry, Jasmine
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    Nafria, M.
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    Aymerich, X.
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    Richard, Olivier  
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    Vandervorst, Wilfried  
    Journal article
    2004, Microelectronic Engineering, (72) 1_4, p.191-196
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    Gatestacks for scalable high-performance FinFETs

    Vellianitis, Georgios  
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    Van Dal, Mark  
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    Witters, Liesbeth  
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    Curatola, Gilberto
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    Doornbos, Gerben  
    Proceedings paper
    2007, Technical Digest International Electron Devices Meeting - IEDM, 10/12/2007, p.681-684
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    Growth and physical properties of MOCVD-deposited hafnium oxide films and their properties on silicon

    Van Elshocht, Sven  
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    Caymax, Matty  
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    De Gendt, Stefan  
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    Conard, Thierry  
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    Petry, Jasmine
    Proceedings paper
    2003, Novel Materials and Processes for Advanced CMOS, 2/12/2002, p.197-202
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    High resolution electrical characterization of advanced CMOS devices

    Eyben, Pierre  
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    Petry, Jasmine
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    Janssens, Tom
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    Fukutome, H.
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    Vandervorst, Wilfried  
    Proceedings paper
    2004, Seeing at the Nanoscale II, 13/10/2004, p.S4-3-76
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    Impact of incorporated Al on the TiN/HfO2 interface effective work function

    Ka, Xiong
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    Robertson, John
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    Pourtois, Geoffrey  
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    Petry, Jasmine
    ;
    Müller, Markus
    Journal article
    2008, Journal of Applied Physics, (104) 7, p.74501
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    Issues, achievements and challenges towards integration of high-k dielectrics

    Caymax, Matty  
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    De Gendt, Stefan  
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    Vandervorst, Wilfried  
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    Heyns, Marc  
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    Bender, Hugo  
    Proceedings paper
    2002, Frontiers in Electronics. Future Chips. Proceedings of the 2002 Workshop, 6/01/2002, p.?-?
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    Issues, achievements and challenges towards intergration of high-k dielectrics

    Heyns, Marc  
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    Bender, Hugo  
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    Caymax, Matty  
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    Carter, R
    ;
    Claes, Martine  
    ;
    Conard, Thierry  
    Proceedings paper
    2002, 5th International Forum on Semiconductor Technology - IFST, 21/02/2002
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