Browsing by Author "Polspoel, Wouter"
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Publication 0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications
Proceedings paper2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632Publication Active dopant profiling of advanced semiconductor devices using scanning spreading resistance microscopy
Meeting abstract2008, Dutch Scanning Probe Microscopy Symposium - SPM, 8/12/2008Publication Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni
Journal article2010, Journal of the Electrochemical Society, (157) 8, p.G187-G192Publication Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM
Journal article2005, Microelectronic Engineering, 80, p.436-439Publication Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors
Oral presentation2008, 15th Workshop on Dielectrics in Microelectronics - WODIMPublication Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors
Journal article2009, Journal of Vacuum Science and Technology B, (27) 1, p.356-359Publication Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes
Journal article2009, Journal of Applied Physics, (106) 9, p.94101Publication Evaluation of trap creation and charging in thin SiO2 using both SCM and C-AFM
;Polspoel, WouterJournal article2007, Microelectronic Engineering, (84) 3, p.495-500Publication Experimental studies of dose retention and activation in fin field-effect-transistor-based structures
Journal article2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1H5-C1H13Publication Experimental studies of dose retention and activation in FinFet-based structures
Proceedings paper2009, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 26/04/2009Publication High resolution study of high-k dielectrics with Conductive AFM
;Polspoel, WouterProceedings paper2008, Dutch Scanning Probe Microscopy Symposium - SPM-Day, 8/12/2008Publication High-k dielectrics for future generation memory devices
;Kittl, Jorge; ; ;Menou, Nicolas; Wang, Xin PengJournal article2009, Microelectronic Engineering, (86) 7_9, p.1789-1795Publication Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes
Journal article2010, Applied Physics Letters, (97) 16, p.162906Publication Improved characterization of high-k degradation with vacuum C-AFM
Proceedings paper2008, Synthesis and Metrology of Nanoscale Oxides and Thin Films, 22/03/2008, p.1074-I11-02Publication Improved nano-scale characterization of high-k dielectrics with vacuum C-AFM
Meeting abstract2007, Workshop on Scanning Probe Microscopy and Spectroscopy, 26/10/2007Publication Influence of vacuum environment in conductive AFM measurements on advanced MOS gate dielectrics
Oral presentation2007, Trends in Nanotechnology conference - TNT 2007Publication Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics
;Aguilera, Lidia ;Polspoel, Wouter ;Volodin, Alexander ;Van Haesendonck, ChrisPorti, MarcJournal article2008, Journal of Vacuum Science and Technology B, (26) 4, p.1445-1449Publication Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors
Journal article2008, Microelectronics Reliability, (48) 8_9, p.1521-1524Publication Nanoscale analysis of planar and 3D-Si-structures
Oral presentation2009, 16th Microscopy of Semiconducting Materials Conference - MSM XVI