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Browsing by Author "Polspoel, Wouter"

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    0.5 nm EOT low leakage ALD SrTiO3 on TiN MIM capacitors for DRAM applications

    Menou, Nicolas
    ;
    Wang, Xin Peng
    ;
    Kaczer, Ben  
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    Polspoel, Wouter
    ;
    Popovici, Mihaela Ioana  
    Proceedings paper
    2008, Technical Digest International Electron Devices Meeting - IEDM, 15/12/2008, p.929-632
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    Active dopant profiling of advanced semiconductor devices using scanning spreading resistance microscopy

    Mody, Jay
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    Eyben, Pierre  
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    Polspoel, Wouter
    ;
    Schulze, Andreas
    ;
    Nazir, Aftab  
    Meeting abstract
    2008, Dutch Scanning Probe Microscopy Symposium - SPM, 8/12/2008
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    Bipolar switching characteristics and scalability in NiO layers made by thermal oxidation of Ni

    Goux, Ludovic  
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    Polspoel, Wouter
    ;
    Lisoni, Judit
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    Chen, Yangyin  
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    Pantisano, Luigi
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    Wang, Xin Peng
    Journal article
    2010, Journal of the Electrochemical Society, (157) 8, p.G187-G192
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    Comparison of electric properties of ultra-thin thermal and plasma nitrided silicon oxides with different post-deposition treatments using C-AFM

    Polspoel, Wouter
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    Vandervorst, Wilfried  
    ;
    Petry, Jasmine
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    Conard, Thierry  
    Journal article
    2005, Microelectronic Engineering, 80, p.436-439
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    Comparison of standard macroscopic and Conductive AFM leakage measurements on gate removed high-k capacitors

    Polspoel, Wouter
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    Vandervorst, Wilfried  
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    Aguilera, Lidia
    ;
    Porti, Marc
    ;
    Nafria, Montserrat
    Oral presentation
    2008, 15th Workshop on Dielectrics in Microelectronics - WODIM
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    Comparison of standard macroscopic and conductive atomic force microscopy leakage measurements on gate removed high-k capacitors

    Polspoel, Wouter
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    Vandervorst, Wilfried  
    ;
    Aguilera, L.
    ;
    Porti, M.
    ;
    Nafria, M.
    ;
    Aymerich, X.
    Journal article
    2009, Journal of Vacuum Science and Technology B, (27) 1, p.356-359
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    Composition influence on the physical and electrical properties of SrxTi1-xOy-based MIM capacitors prepared by Atomic Layer Deposition using TiN bottom electrodes

    Menou, Nicolas
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    Popovici, Mihaela Ioana  
    ;
    Clima, Sergiu  
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    Opsomer, Karl  
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    Polspoel, Wouter
    Journal article
    2009, Journal of Applied Physics, (106) 9, p.94101
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    Evaluation of trap creation and charging in thin SiO2 using both SCM and C-AFM

    Polspoel, Wouter
    ;
    Vandervorst, Wilfried  
    Journal article
    2007, Microelectronic Engineering, (84) 3, p.495-500
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    Experimental studies of dose retention and activation in fin field-effect-transistor-based structures

    Mody, Jay
    ;
    Duffy, Ray
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    Eyben, Pierre  
    ;
    Goossens, Jozefien
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    Moussa, Alain  
    ;
    Polspoel, Wouter
    Journal article
    2010, Journal of Vacuum Science and Technology B, (28) 1, p.C1H5-C1H13
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    Experimental studies of dose retention and activation in FinFet-based structures

    Mody, Jay
    ;
    Duffy, Ray
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    Eyben, Pierre  
    ;
    Goossens, Jozefien
    ;
    Moussa, Alain  
    ;
    Polspoel, Wouter
    Proceedings paper
    2009, International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology and Modeling, 26/04/2009
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    High resolution study of high-k dielectrics with Conductive AFM

    Polspoel, Wouter
    ;
    Vandervorst, Wilfried  
    Proceedings paper
    2008, Dutch Scanning Probe Microscopy Symposium - SPM-Day, 8/12/2008
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    High resolution study of high-k layers using C-AFM

    Polspoel, Wouter
    PHD thesis
    2012-02
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    High-k dielectrics for future generation memory devices

    Kittl, Jorge
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    Opsomer, Karl  
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    Popovici, Mihaela Ioana  
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    Menou, Nicolas
    ;
    Kaczer, Ben  
    ;
    Wang, Xin Peng
    Journal article
    2009, Microelectronic Engineering, (86) 7_9, p.1789-1795
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    Impact of crystallization behavior of SrxTiyOz films on electrical properties of metal-insulator-metal capacitors with TiN electrodes

    Pawlak, Malgorzata
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    Kaczer, Ben  
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    Kim, Min-Soo  
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    Popovici, Mihaela Ioana  
    ;
    Tomida, Kazuyuki  
    Journal article
    2010, Applied Physics Letters, (97) 16, p.162906
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    Improved characterization of high-k degradation with vacuum C-AFM

    Polspoel, Wouter
    ;
    Vandervorst, Wilfried  
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    Aguilera, Lidia
    ;
    Porti, Marc
    ;
    Nafria, Montserrat
    Proceedings paper
    2008, Synthesis and Metrology of Nanoscale Oxides and Thin Films, 22/03/2008, p.1074-I11-02
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    Improved nano-scale characterization of high-k dielectrics with vacuum C-AFM

    Polspoel, Wouter
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    Aguilera, Lidia
    ;
    Vandervorst, Wilfried  
    ;
    Volodin, Alexander
    Meeting abstract
    2007, Workshop on Scanning Probe Microscopy and Spectroscopy, 26/10/2007
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    Influence of vacuum environment in conductive AFM measurements on advanced MOS gate dielectrics

    Aguilera, Lidia
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    Polspoel, Wouter
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    Vandervorst, Wilfried  
    ;
    Nafria, Montserrat
    Oral presentation
    2007, Trends in Nanotechnology conference - TNT 2007
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    Influence of vacuum environment on conductive atomic force microscopy measurements of advanced metal-oxide-semiconductor gate dielectrics

    Aguilera, Lidia
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    Polspoel, Wouter
    ;
    Volodin, Alexander
    ;
    Van Haesendonck, Chris
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    Porti, Marc
    Journal article
    2008, Journal of Vacuum Science and Technology B, (26) 4, p.1445-1449
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    Nanometer-scale leakage measurements in high vacuum on de-processed high-k capacitors

    Polspoel, Wouter
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    Vandervorst, Wilfried  
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    Aguilera, Lidia
    ;
    Porti, Marc
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    Nafria, Montserrat
    Journal article
    2008, Microelectronics Reliability, (48) 8_9, p.1521-1524
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    Nanoscale analysis of planar and 3D-Si-structures

    Vandervorst, Wilfried  
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    Eyben, Pierre  
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    Polspoel, Wouter
    ;
    Mody, Jay
    ;
    Gilbert, Matthieu
    Oral presentation
    2009, 16th Microscopy of Semiconducting Materials Conference - MSM XVI
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