Browsing by Author "Smolanka, A."
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Publication Back-gate induced noise overshoot in partially-depleted SOI MOSFETs
Proceedings paper2005, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment, 26/04/2004, p.255-260Publication Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques
Proceedings paper2007, Noise and Fluctuations: 19th International Conference, 9/09/2007, p.39-42Publication Black-gate induced noise overshoot in partially-depleted SOI MOSFETs
Oral presentation2004, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh EnvironmentPublication Electron valence-band tunnelling excess noise in twin-gate silicon-on-insulator MOSFETs
Proceedings paper2005, Proceedings of ULIS, 7/04/2005, p.113-116Publication Excess Lorentzian noise in partially-depleted SOI-nMOSFETs induced by an accumulation back gate-bias
Journal article2004, IEEE Electron Device Letters, (25) 6, p.433-435Publication Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13 μm fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers
Proceedings paper2004, Proceedings of the 34th European Solid-State Device Research Conference - ESSDERC, 21/09/2004, p.357-360Publication Influence of the accumulation back-gate voltage on the noise spectra of deep submicron SOI MOSFET's in a wide range of drain voltages
Journal article2008, Ukrainian Journal of Physics, (53) 1, p.74-79Publication Linear kink effect Lorentzians in the noise spectra of n- and p-channel fin field-effect transistors processed in standard and strained silicon-on-insulator substrates
Journal article2009, Solid-State Electronics, 53, p.613-620Publication Linear-kink-noise suppression in partially depleted SOI using the twin-gate MOSFET configuration
Journal article2005, IEEE Electron Device Letters, (26) 7, p.510-512Publication LKE and BGI Lorentzian noise in strained and non-strained tri-gate SOI FinFETs with HfSiON/SiO2 gate dielectric
Journal article2011, Solid-State Electronics, (63) 1, p.27-36Publication Low-frequency noise characterization of 90 nm multiple gate oxide CMOS transistors
;Lukyanchikova, N. ;Garbar, N. ;Smolanka, A. ;Lokshin, M. ;Lee, Shih Chung; Claeys, CorProceedings paper2005, Noise and Fluctuations: 18th International Conference on Noise and Fluctuations - ICNF, 19/09/2005, p.331-334Publication Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
Journal article2008, Semiconductor Physics, Quantum Electronics and Optoelectronics, (11) 3, p.203-208Publication Low-frequency noise of strained and non-strained n-channel tri-gate FinFETs with different gate dielectrics
Proceedings paper2009, 20th International Conference on Noise and Fluctuations - ICNF, 14/06/2009, p.291-294Publication On the 1/f noise of triple-gate field-effect transistors with high-k gate dielectric
Journal article2009, Applied Physics Letters, (95) 3, p.32101Publication Origin of the front-back gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate
Journal article2005, Journal of Applied Physics, (98) 11, p.114506-1-114506-11Publication Short-channel effects in the Lorentzian noise induced by the EVB tunneling in partially depleted SOI MOSFETs
Journal article2004, Solid-State Electronics, (48) 5, p.747-758