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Browsing by Author "Tokei, Zsolt"

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    1/f noise measurements for faster electromigration characterization

    Beyne, Sofie  
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    Croes, Kristof  
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    De Wolf, Ingrid  
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    Tokei, Zsolt  
    Proceedings paper
    2016, IEEE International Reliability Physics Symposium - IRPS, 17/04/2016, p.5B.3
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    1/f noise measurements for faster evaluation of electromigration in advanced microelectronics interconnections

    Beyne, Sofie  
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    Croes, Kristof  
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    De Wolf, Ingrid  
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    Tokei, Zsolt  
    Journal article
    2016, Journal of Applied Physics, (119) 18, p.184302
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    1Xnm copper and low-k reliability

    Tokei, Zsolt  
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    Croes, Kristof  
    Proceedings paper
    2011-09, International Conference on Solid State Devices and Materials - SSDM, 28/09/2011, p.777-778
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    21 nm Pitch dual-damascene BEOL process integration with full barrierless Ru metallization

    Vega Gonzalez, Victor  
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    Wilson, Chris  
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    Paolillo, Sara  
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    Decoster, Stefan  
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    Mao, Ming  
    Proceedings paper
    2019, IEEE International Interconnect Technology Conference (IITC 2019) and Materials for Advanced Metallization Conference (MAM 2019), 3/06/2019, p.3.4
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    28nm pitch single exposure patterning readiness by metal oxide resist on 0.33NA EUV Lithography

    Kim, Il Hwan
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    Kim, Insung
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    Park, Changmin
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    Lee, Jsiun
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    Ryu, Koungmin
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    De Schepper, P.
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    Doise, J.
    Proceedings paper
    2021, Conference on Extreme Ultraviolet (EUV) Lithography XII, FEB 22-26, 2021, p.116090Q
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    300mm IGZO nFETs with low-T Ru contacts for localized doping and increased BEOL compatibility

    Kljucar, Luka  
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    Smets, Quentin  
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    van Setten, Michiel  
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    Mitard, Jerome  
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    Belmonte, Attilio  
    Proceedings paper
    2020, International Conference on Solid State Devices and Materials - SSDM, 27/09/2020, p.J-6-03
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    300mm wafer level CVD-Mn/iodine-CVD-Cu-based metallization study for advanced copper interconnections

    Jourdan, Nicolas  
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    Cellier, Daniel  
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    Van Elshocht, Sven  
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    Boemmels, Juergen  
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    Tokei, Zsolt  
    Meeting abstract
    2016, Materials for Advanced Metallization Conference - MAM, 20/03/2016
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    45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

    Henson, Kirklen
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    Lander, Rob
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    Demand, Marc  
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    Dachs, Charles
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    Kaczer, Ben  
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    Deweerd, Wim
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    Schram, Tom  
    Proceedings paper
    2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.851-854
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    A comprehensive LER-aware TDDB lifetime model for advanced Cu interconnects

    Stucchi, Michele  
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    Roussel, Philippe  
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    Tokei, Zsolt  
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    Demuynck, Steven  
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    Groeseneken, Guido  
    Journal article
    2011, IEEE Transactions on Device and Materials Reliability, (11) 2, p.278-289
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    A DRAM compatible Cu contact using self-aligned Ta-silicide and Ta-barrier

    Zhao, Chao
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    Ahn, Jae Young
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    Horiguchi, Naoto  
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    Demuynck, Steven  
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    Tokei, Zsolt  
    Journal article
    2008, Microelectronic Engineering, (85) 10, p.2009-2012
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    A feasibility study of dual damascene porous SiLK resin with spin-on hard masks

    Hoofman, Romano  
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    Michelon, Julien
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    Verheijden, G.J.A.M.
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    Waeterloos, Joost
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    Caluwaerts, Rudy  
    Proceedings paper
    2004, Advanced Metallization Conference 2003, 21/10/2003, p.147-151
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    A high-reliable Cu/ULK integration scheme using Metal Hard Mask and Low-k capping film

    Travaly, Youssef
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    Tsutsue, M.
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    Ikeda, Atsushi
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    Verdonck, Patrick  
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    Tokei, Zsolt  
    Oral presentation
    2007, Advanced Metallization Conference: 17th Asian Session
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    A large scale systematic study of graphene/metal contact resistance using cTLM

    Politou, Maria
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    Liu, Enlong
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    Asselberghs, Inge  
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    Lee, ChangSeung
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    Martens, Koen  
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    Radu, Iuliana  
    Meeting abstract
    2014, Graphene Poster Book, 6/05/2014, p.127
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    A method to pattern tight tip-to-tip in 32nm-pitch N5 interconnect using Ru area selective deposition tone inversion process

    Briggs, Basoene  
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    Soethoudt, Job  
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    Delabie, Annelies  
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    Wilson, Chris  
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    Tokei, Zsolt  
    Oral presentation
    2018, Materials for Advanced Metallization Conference - MAM
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    A million wafer, virtual fabrication approach to determine process capability requirements for an industry-standard 5nm BEOL two-level metal flow

    Clark, William
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    Juncker, Aurelie
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    Paladugu, E.
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    Fried, David
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    Wilson, Chris  
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    Pourtois, Geoffrey  
    Proceedings paper
    2016, International Conference on Simulation of Semiconductor Processes and Devices - SISPAD, 6/09/2016, p.43-46
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    A multilevel sub-modeling approach to evaluate 3D IC packaging induced stress on hybrid interconnect structures

    Lofrano, Melina  
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    Gonzalez, Mario  
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    Vandevelde, Bart  
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    Tokei, Zsolt  
    Meeting abstract
    2013, Materials for Advances Metallization - MAM, 10/03/2013
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    A NEMS based sensor to monitor stress in deep sub-micron Cu/Low-$k$ interconnects

    Wilson, Chris  
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    Croes, Kristof  
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    Van Cauwenberghe, Marc  
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    Tokei, Zsolt  
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    Beyer, Gerald  
    Journal article
    2009, Semicond. Sci. Technol., (24) 11, p.115018
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    A new perspective of barrier material evaluation and process optimization

    Zhao, Larry
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    Tokei, Zsolt  
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    Gianni, Giai Gischia
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    Volders, Henny  
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    Beyer, Gerald  
    Proceedings paper
    2009, IEEE International Interconnect Technology Conference - IITC, 1/06/2009, p.206-208
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    A novel electromigration characterization method based on low-frequency noise measurements

    Beyne, Sofie  
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    Varela Pedreira, Olalla  
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    De Wolf, Ingrid  
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    Tokei, Zsolt  
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    Croes, Kristof  
    Journal article
    2019, Semiconductor Science and Technology, (34) 7, p.75002
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    A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45-nm node applications and beyond

    Op de Beeck, Maaike  
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    Versluijs, Janko  
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    Tokei, Zsolt  
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    Demuynck, Steven  
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    de Marneffe, Jean-Francois  
    Proceedings paper
    2007, Advances in Resist Materials and Processing Technology XXIV, 25/02/2007, p.65190U
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