Browsing by Author "Tolle, John"
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Publication Advanced processes for Si:P and Si:C:P epitaxial growth and low-temperature surface cleaning
Meeting abstract2014-11, Workshop on Atomically Controlled Processing for Ultra-large Scale Integration, 13/11/2014Publication Benchmarking Ge1-xSnx CVD Epitaxy using GeH4 and Ge2H6
Meeting abstract2016-11, JSPS - FZ-Jülich Workshop on "Atomically Controlled Processing for Ultra-large Scale Integration", 24/11/2016, p.20-21Publication Characterization of epitaxial Si:C:P and SI:P layers for source/drain formation in advanced bulk FinFETs
Proceedings paper2014-10, SiGe, Ge, and Related Compounds 6: Materials, Processing, and Devices, 5/10/2014, p.977-987Publication Characterization of epitaxial Si:C:P and Si:P layers for source/drain formation in advanced bulk finFETs
Meeting abstract2014-10, ECS Fall Meeting Symposium: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6, 5/10/2014, p.1855Publication Characterization of highly doped Si:P, Si:As and Si:P:As Epi layers for source/drain epitaxy
Meeting abstract2019-06, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.44-45Publication Characterization of highly doped Si:P, Si:As and Si:P:As epi layers for source/drain epitaxy
Proceedings paper2019, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.11-15Publication Enhanced B doping in CVD-grown GeSn:B using B $d-doping layers
Journal article2018-02, Journal of Crystal Growth, 483, p.285-290Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Epitaxial GeSn: impact of process conditions on material quality
Meeting abstract2018-05, Joint ISTDM/ICSI Conference, 27/05/2018, p.195-196Publication Epitaxial GeSn: Impact of process conditions on material quality
; ; Publication Epitaxial growth of (Si)GeSn source-drain layers for advanced gate all around devices
Oral presentation2019, talk at Nagoya UniversityPublication Epitaxial growth of (Si)GeSn source/drain layers for advanced gate all around devices
Meeting abstract2019-09, 2019 Compound Semiconductor Week (CSW), 19/05/2019, p.1-2Publication Epitaxial growth of Ga doped SiGe for reduction of contact resistance in finFET source/drain materials
Meeting abstract2019, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.214-215Publication Epitaxial growth of Ga-doped SiGe for reduction of contact resistance in finFET source/drain materials
Proceedings paper2019-10, 2nd Joint ISTDM / ICSI 2019 Conference, 2/06/2019, p.7-10Publication Epitaxial growth schemes for fin and Gate All Around devices
Meeting abstract2018, 11th International WorkShop on New Group IV Semiconductor Nanoelectronics, 23/02/2018Publication Epitaxial growth schemes for Fin and Gate-All-Around devices
Meeting abstract2018-05, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018, p.65-66Publication Fundamentals of Ge1-xSnx and SiyGe1-x-ySnx RPCVD epitaxy
Publication Ga-doped Ge and [B + Ga] Co-doped SiGe epitaxial source-drain for Sub-7 nm logic devices
Meeting abstract2018, 1st Joint ISTDM / ICSI 2018 Conference, 27/05/2018Publication Gallium-doped SiGe and Ge via MO-RPCVD epitaxy
; ; Publication Ge1-xSnx and SiyGe1-x-ySnx epitaxy on a commercial CVD reactor