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Browsing by Author "Tritchkov, Alexander"

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    0.18 μm KrF lithography using optical proximity correction based on empirical behavior modeling

    Tritchkov, Alexander
    ;
    Stirnimann, J.
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    Gangala, Hareen K
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    Ronse, Kurt  
    Journal article
    1998, Journal of Vacuum Science and Technology B, (12) 6, p.3398-3404
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    AIMS TM 45 inspection of CH treated with inverse lithography

    Hendrickx, Eric  
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    Birkner, Robert
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    Kempsell, Monica
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    Tritchkov, Alexander
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    Richter, Rigo
    Proceedings paper
    2008, 5th International Symposium on Immersion Lithography Extensions, 22/09/2008
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    Application of pixel-based mask optimization technique for high-transmission attenuated PSM

    Sakajiri, Kyohei
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    Tritchkov, Alexander
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    Granik, Yuri
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    Hendrickx, Eric  
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    Vandenberghe, Geert  
    Proceedings paper
    2009, Design for Manufacturability through Design-Process Integration III, 22/02/2009, p.72750X
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    Automated OPC for application in advanced lithography

    Ronse, Kurt  
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    Tritchkov, Alexander
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    Randall, John
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    Jonckheere, Rik  
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    Ghandehari, Kouros
    Proceedings paper
    1997, Photomask and X-Ray Mask Technology IV, 17/04/1997, p.138-144
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    Characterization and correction of optical proximity effects in deep-ultraviolet lithography using behavior modeling

    Yen, Anthony
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    Tritchkov, Alexander
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    Stirniman, J. P.
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    Vandenberghe, Geert  
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    Jonckheere, Rik  
    Journal article
    1996, Journal of Vacuum Science and Technology B, (14) 6, p.4175-4178
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    Design split algorithms validation for DPT implementation at 32 nm and beyond

    Tritchkov, Alexander
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    Kempsell, Monica
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    Glotov, Petr
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    Sahouria, Emile
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    Komirenko, Sergiy
    Proceedings paper
    2008, 5th International Symposium on Immersion Lithography Extensions, 22/09/2008
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    Directed self-assembly (DSA) grapho-epitaxy template generation with immersion lithography

    Ma, Yuansheng
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    Lei, Junjiang
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    Torres, J. Andres
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    Hong, Le
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    Word, James
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    Fenger, Germain
    Proceedings paper
    2015, Alternative Lithographic Technologies VII, 22/02/2015, p.942306
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    Directed self-assembly graphoepitaxy template generation with immersion lithography

    Ma, Yuansheng
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    Lei, Junjiang
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    Torres, J. Andres
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    Hong, Le
    ;
    Word, James
    ;
    Fenger, Germain
    Journal article
    2015, Journal of Micro/Nanolithography MEMS and MOEMS, (14) 3, p.31216
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    Double patterning EDA solutions for the 32nm HP and beyond

    Bailey, George
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    Tritchkov, Alexander
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    Park, Jea-Woo
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    Hong, Le
    ;
    Wiaux, Vincent  
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    Hendrickx, Eric  
    Proceedings paper
    2007, Design for Manufacturability through Design-Process Integration, 28/02/2007, p.65211k
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    Electron beam / DUV intra-level mix-and-match lithography for random logic 0.25 μm CMOS

    Jonckheere, Rik  
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    Tritchkov, Alexander
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    Van Driessche, Veerle  
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    Van den hove, Luc  
    Journal article
    1995, Microelectronic Engineering, (27) 1_4, p.231-234
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    Feasibility of 250 nm gate patterning using i-line with OPC

    Van Driessche, Veerle  
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    Finders, Jo
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    Tritchkov, Alexander
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    Ronse, Kurt  
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    Van den hove, Luc  
    Journal article
    1998, Microelectronic Engineering, 41/42, p.111-116
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    Hyper-NA imaging of 45nm node random CH layouts using inverse lithography

    Hendrickx, Eric  
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    Tritchkov, Alexander
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    Sakajiri, Kyohei
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    Granik, Yuri
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    Kempsell, Monica
    Proceedings paper
    2008, Optical Microlithography XXI, 24/02/2008, p.68240L
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    Inverse lithography for 45-nm-node contact holes at 1.35 numerical aperture

    Kempsell, Monica
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    Hendrickx, Eric  
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    Tritchkov, Alexander
    ;
    Sakajiri, Kyohei
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    Yasui, Kenichi
    Journal article
    2009, Journal of Micro/Nanolithography, MEMS, and MOEMS, (8) 4, p.43001
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    Lithography simulation with aerial image - variable threshold resist model

    Randall, John
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    Gangala, Hareen K
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    Tritchkov, Alexander
    Journal article
    1999, Microelectronic Engineering, (46) 1_4, p.59-63
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    Lithography simulation with aerial image-variable threshold resist model

    Randall, John
    ;
    Gangala, Hareen K
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    Tritchkov, Alexander
    Oral presentation
    1998, MNE 98 - Micro- and Nano-Engineering Conference; 22-24 Sept. 1998; Leuven, Belgium.
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    Optical proximity effects and correction strategies for chemical amplified DUV resists

    Op de Beeck, Maaike  
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    Bruggeman, Albert
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    Botermans, Harry
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    Van Driessche, Veerle  
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    Yen, Anthony
    Proceedings paper
    1996, Optical Microlithography IX, 10/03/1996, p.622-633
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    Optical proximity effects correction at 0.25 mm incorporating process variations in lithography

    Tritchkov, Alexander
    ;
    Rieger, M.
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    Stirniman, J.
    ;
    Yen, Anthony
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    Ronse, Kurt  
    ;
    Vandenberghe, Geert  
    Proceedings paper
    1997, Optical Microlithography X, 12/03/1997, p.726-738
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    Optically induced mask criical dimension error magnification in 248 nm lithography

    Randall, John
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    Tritchkov, Alexander
    Journal article
    1998, Journal of Vacuum Science and Technology B, (12) 6, p.3606-3611
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    Proximity effects correction for advanced optical lithography processes

    Tritchkov, Alexander
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    Finders, Jo
    ;
    Randall, John
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    Ronse, Kurt  
    ;
    Van den hove, Luc  
    Journal article
    1998, Japanese Journal of Applied Physics. Part 1: Regular Papers, (37) 6A, p.3585-3593
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    Reduction of mask induced CD errors by optical proximity correction

    Randall, John
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    Tritchkov, Alexander
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    Jonckheere, Rik  
    ;
    Jaenen, Patrick  
    ;
    Ronse, Kurt  
    Proceedings paper
    1998, Optical Microlithography XI, 25/02/1998, p.124-130
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