Browsing by Author "Vanhaelemeersch, Serge"
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Publication A 0.314mm2 6T-SRAM cell built with tall triple-gate devices for 45nm node applications using 0.75NA 193nm lithography
Proceedings paper2004-12, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.269-272Publication A novel integration scheme for wafer singulation and selective processing using temporary dry film resist
Proceedings paper2021, IEEE 71st Electronic Components and Technology Conference (ECTC), JUN 01-JUL 04, 2021, p.793-796Publication A novel plasma-assisted shrink process to enlarge process windows of narrow trenches and contacts for 45-nm node applications and beyond
; ; ; ; Proceedings paper2007, Advances in Resist Materials and Processing Technology XXIV, 25/02/2007, p.65190UPublication Angle resolved XPS characterization of the formation of Cl and Br bonds in poly-silicon etching and its cleaning
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.153-156Publication Angle resolved XPS characterization of the formation of Cl and Br bonds in poly-silicon etching and its cleaning
Oral presentation1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication Applicability of HF solutions for contact hole cleaning on top of TiSi2
Proceedings paper1998, Proceedings of the 5th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, 31/08/1997, p.602-609Publication Applicability of HF solutions for the cleaning of TiSi2 surface
Proceedings paper1997, Materials for Advanced Metallization. MAM'97 Abstracts Booklet; European Workshop Materials for Advanced Metallization. MAM'97 A, p.110-112Publication Application of porous low-k dielectrics and copper in microelectronics
Oral presentation2005, Seminar on Micro-NanotechnologyPublication Challenges of clean/strip processing for Cu/LowK technology
; ; ; Proceedings paper2004, Proceedings of the IEEE International Interconnect Technology Conference - IITC, 7/06/2004, p.187-189Publication Challenges of plasma damage of low-k materials
Proceedings paper2007, 234th ACS Meeting, 19/08/2007, p.100-103Publication Characterisation and integration feasibility of JSR's low-k dielectric LKD-5109
Journal article2002, Microelectronic Engineering, (64) 1_4, p.25-33Publication Characterisation of Cu surface cleaning by downstream N2/H2 plasma
Proceedings paper2001, Advanced Metallization Conference 2000, 3/10/2000, p.153-159Publication Characterisation of plasma etch related residues formed on top of ECD Cu
Oral presentation1999, Advanced Metallization Conference; 28-30 September 1999; Orlando, FL, USA.Publication Characterisation of plasma etch releted residues formed on top of ECD Cu films
Proceedings paper2000, Advanced Metallization Conference 1999 - AMC 1999, 28/09/1999, p.615-619Publication Characterization and integration in Cu damascene structures of AURORA, an inorganic low-k dielectric
Proceedings paper2001, Materials, Technology, and Reliability for Advanced Interconnects and Low-k Dielectrics, 23/04/2000, p.D5.14.1-D5.14-6Publication Characterization and integration of a new Si-O-C film deposited by CVD
Proceedings paper2001, Advanced Metallization Conference 2000, 3/10/2000, p.595-601Publication Characterization of Cu surface cleaning by hydrogen plasma
Journal article2001, Journal of Vacuum Science & Technology B, (19) 4, p.1201-1211Publication Characterization of the post dry etch cleaning of the silicon surface prior to silicon epitaxial growth
Oral presentation1998, 4th International Symposium on Ultra Clean Processing of Silicon Surfaces - UCPSSPublication Characterization of the post dry etch cleaning of the silicon surface prior to silicon epitaxial growth
Proceedings paper1999, Ultra Clean Processing of Silicon Surfaces; Proceedings of the 4th International Symposium on Ultra Clean Processing of Silicon, 21/09/1998, p.97-100Publication Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology
Journal article1999, J. Electrochem. Soc., (146) 4, p.1549-1556