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Browsing by Author "Vertommen, Johan"

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    15nm HP patterning with EUV and SADP: key contributors for improvement of LWR, LER, and CDU

    Xu, Kaidong
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    Souriau, Laurent  
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    Hellin, David  
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    Versluijs, Janko  
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    Wong, Patrick  
    Proceedings paper
    2013, Advanced Etch Technology for Nanopatterning II, 23/02/2013, p.86850C
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    15nm HP patterning with EUV lithography and SADP

    Souriau, Laurent  
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    Hellin, David  
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    Kunnen, Eddy
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    Versluijs, Janko  
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    Dekkers, Harold  
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    Albert, Johan
    Meeting abstract
    2012, 34th International Symposium on Dry Process - DPS, 15/11/2012
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    30-nm half-pitch metal patterning using MotifTM critical dimension shrink technique and double patterning

    Versluijs, Janko  
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    de Marneffe, Jean-Francois  
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    Goossens, Danny  
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    Vandeweyer, Tom  
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    Wiaux, Vincent  
    Journal article
    2009, Journal of Micro/Nanolithography MEMS MOEMS, (8) 1, p.11007
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    30nm half-pitch metal patterning using MotifTM CD shrink technique and double patterning

    Versluijs, Janko  
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    de Marneffe, Jean-Francois  
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    Goossens, Danny  
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    Op de Beeck, Maaike  
    Proceedings paper
    2008, Optical Microlithography XXI, 24/02/2008, p.69242C
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    45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

    Henson, Kirklen
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    Lander, Rob
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    Demand, Marc  
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    Dachs, Charles
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    Kaczer, Ben  
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    Deweerd, Wim
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    Schram, Tom  
    Proceedings paper
    2004, Technical Digest International Electron Devices Meeting - IEDM, 13/12/2004, p.851-854
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    A novel concept for contact etch residue removal

    Vos, Ingrid  
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    Hellin, David  
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    Demuynck, Steven  
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    Richard, Olivier  
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    Conard, Thierry  
    Proceedings paper
    2007, Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 10, 7/10/2007, p.403-407
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    Characterization and residue elimination of hot aluminum etching in a transformer coupled plasma etcher

    Kopalidis, Peter
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    Vertommen, Johan
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    Badenes, Gonçal
    Journal article
    1996, Journal of Electrochemical Society, (143) 5, p.1763-1768
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    Characterization of PVD TaN and ALD WNxCy copper diffusion barriers on a porous CVD low-k material

    Travaly, Youssef
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    Kemeling, N.
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    Maenhoudt, Mireille
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    Peeters, S.
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    Tokei, Zsolt  
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    Abell, Thomas
    Proceedings paper
    2004, Advanced Metallization Conference 2003, 21/10/2003, p.723-728
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    Clean dry strip process for implanted resist using water vapor plasma

    Daviet, Jean-François
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    Coosemans, Frank
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    Vertommen, Johan
    Meeting abstract
    1994, 186th Electrochemical Society Fall Meeting: Symposium on High Purity Silicon III, 9/10/1994, p.646-647
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    Confined chemical cleaning: a novel concept evaluated for front end of line applications

    Vos, Ingrid  
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    Peeters, Stefan  
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    Verbeeck, Rita  
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    Boullart, Werner  
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    Vertommen, Johan
    Proceedings paper
    2008, Ultra Clean Processing of Semiconductor Surfaces VIII - UCPSS, 17/09/2006, p.121-124
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    Dry Development for 0.25 5m Top Surface Imaging

    Vertommen, Johan
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    Goethals, Mieke
    Oral presentation
    1995, LAM Technical Symposium; July 1995;
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    Dry development for 0.25 μm top surface imaging

    Vertommen, Johan
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    Goethals, Mieke
    Journal article
    1997, Journal of the Electrochemical Society, (144) 7, p.2461-2467
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    Dry development in an O2/SO2 plasma for sub-0.18 μm top layer imaging processes

    Goethals, Mieke
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    Van Roey, Frieda  
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    Sugihara, Takashi
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    Van den hove, Luc  
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    Vertommen, Johan
    Journal article
    1998, Journal of Vacuum Science and Technology B, (12) 6, p.3322-3333
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    Evaluation of advanced I-line resists for practical 0.5*(l/NA) lithography

    Tzviatkov, Plamen
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    Pforr, Rainer
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    Jaenen, Patrick  
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    Vertommen, Johan
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    Van den hove, Luc  
    Proceedings paper
    1994, OCG Microlithography Seminar INTERFACE, 6/11/1994, p.105-124
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    Exploring high aspEct ratio 2μm TSV (25:1)

    Kostermans, Maarten
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    Brouri, Mohand
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    Baier, Ulrich
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    Vertommen, Johan  
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    Pageau, Arnaud
    Proceedings paper
    2011-11, 64th Annual Gaseous Electronics Conference - GEC, 14/11/2011
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    III-V fin patterning in SADP scheme

    Milenin, Alexey  
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    Camerotto, Elisabeth  
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    Sun, Noel
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    Boccardi, Guillaume  
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    Vertommen, Johan
    Meeting abstract
    2016, Plasma Etch and Strip in Microtechnology - PESM, 9/05/2016
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    Implementation of high-k and metal gate materials for the 45nm node and beyond: gate patterning development

    Beckx, Stephan  
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    Demand, Marc  
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    Locorotondo, Sabrina  
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    Henson, Kirklen
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    Claes, Martine  
    Journal article
    2005-06, Microelectronics Reliability, (45) 5_6, p.1007-1011
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    Implementation of high-K and metal gate materials for the 45nm node and beyond: gate patterning development

    Beckx, Stephan  
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    Demand, Marc  
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    Locorotondo, Sabrina  
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    Henson, K.
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    Claes, Martine  
    Oral presentation
    2004, Workshop on Dielectrics in Microelectronics - WODIM
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    Integrated silylation and dry development of resist for sub-0.15µm top surface imaging applications

    Vertommen, Johan
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    Klippert, W.
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    Goethals, Mieke
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    Van Roey, Frieda  
    Journal article
    1998, J. Photopolymer Science and Technology, (11) 4, p.597-612
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    Integrating high-k dielectrics: etched polysilicon or metal gates?

    Schram, Tom  
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    Beckx, Stephan  
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    De Gendt, Stefan  
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    Vertommen, Johan
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    Lee, S.
    Journal article
    2003, Solid State Technology, (46) 6, p.61-64
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